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This paper describes the total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors which are exposed to a γ-ray radiation. Electrical parameters such as threshold voltage, leakage current, trans-conductance, drain-source conductance, and subthreshold slope extracted from the I-V curves are analyzed pre-and post-irradiation. Results show that the threshold voltage, the trans-conductance, and the drain-source conductance are sensitive to radiation compared to wide-channel NMOS transistors–the effect we call radiation induced narrow channel effect(RINCE). The amount of oxide-trapped charges and interface states which would degrade the threshold voltage and leakage current is induced in the STI oxide. The gate oxide is insensitive to irradiation. Combining the structure and process of devices, we finally discuss and analyze the above phenomenon in detail.
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Keywords:
- 0.18 μm /
- narrow-channel NMOS transistor /
- 60Coγ /
- RINCE
[1] He B P, Chen W, Wang G Z 2006 Acta Phys.Sin. 55 3546 (in Chinese) [何宝平, 陈伟, 王桂珍 2006 55 3546]
[2] Li D M, Wang Z H, Huangpu L Y, Gou Q J, Lei Y H, Li G L 2007 Chinese Journal of Electron Devices. 30 745 (in Chinese) [李冬梅, 王志华, 皇甫丽英, 勾秋静, 雷有华, 李国林 2007 电子器件 30 745]
[3] Winokur P S,Schwank J R,McWhorter P J,Dressendorfer P V, Turpin D C 1984 IEEE Trans. Nuc. Sci. 31 1453
[4] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116103 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 60 116103]
[5] Johnston A H, Swimm R T, Allen G R, Miyahira T F 2009 IEEE Trans. on Nuc. Sci. 56 1941
[6] Faccio F, Cervelli G 2005 IEEE Trans. Nuc. Sci. 52 2413
[7] Oldham T R, Lelis A J, McLean F B 1986 IEEE Trans. Nucl. Sci. 33 1203
[8] McWhorter P J, Miller S L, Miller W M 1990 IEEE Trans. Nucl. Sci. 37 1682
[9] Saks N S, Ancona M G, Modolo J A 1984 IEEE Trans. Nucl. Sci. 31 1249
[10] Chen X B, Zhang Q Z 2006 Transistor Principle and Design (Beijing: Publishing House of Electronics Industry) p294 (in Chinese) [陈星弼, 张庆中 2006 晶体管原理与设计 (北京: 电子工业出版社) 第294页]
[11] Behzad Razavi 2001 Design of Analog CMOS Integrated Circuits (Published by McGraw-Hill) p17-26
[12] Chatterjee A, Rogers D, McKee J, Ali I, Nag S, Chen I C 1996 International Electron Devices Meeting San Francisco, CA, USA, December 8-11, 1996 p829-832
[13] Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
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[1] He B P, Chen W, Wang G Z 2006 Acta Phys.Sin. 55 3546 (in Chinese) [何宝平, 陈伟, 王桂珍 2006 55 3546]
[2] Li D M, Wang Z H, Huangpu L Y, Gou Q J, Lei Y H, Li G L 2007 Chinese Journal of Electron Devices. 30 745 (in Chinese) [李冬梅, 王志华, 皇甫丽英, 勾秋静, 雷有华, 李国林 2007 电子器件 30 745]
[3] Winokur P S,Schwank J R,McWhorter P J,Dressendorfer P V, Turpin D C 1984 IEEE Trans. Nuc. Sci. 31 1453
[4] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116103 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 60 116103]
[5] Johnston A H, Swimm R T, Allen G R, Miyahira T F 2009 IEEE Trans. on Nuc. Sci. 56 1941
[6] Faccio F, Cervelli G 2005 IEEE Trans. Nuc. Sci. 52 2413
[7] Oldham T R, Lelis A J, McLean F B 1986 IEEE Trans. Nucl. Sci. 33 1203
[8] McWhorter P J, Miller S L, Miller W M 1990 IEEE Trans. Nucl. Sci. 37 1682
[9] Saks N S, Ancona M G, Modolo J A 1984 IEEE Trans. Nucl. Sci. 31 1249
[10] Chen X B, Zhang Q Z 2006 Transistor Principle and Design (Beijing: Publishing House of Electronics Industry) p294 (in Chinese) [陈星弼, 张庆中 2006 晶体管原理与设计 (北京: 电子工业出版社) 第294页]
[11] Behzad Razavi 2001 Design of Analog CMOS Integrated Circuits (Published by McGraw-Hill) p17-26
[12] Chatterjee A, Rogers D, McKee J, Ali I, Nag S, Chen I C 1996 International Electron Devices Meeting San Francisco, CA, USA, December 8-11, 1996 p829-832
[13] Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
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