Research progress of tuning correlated state in two-dimensional system by organic molecule intercalation

Shi Meng-Zhu; Kang Bao-Lei; Meng Fan-Bao; Wu Tao; Chen Xian-Hui

doi:10.7498/aps.71.20220856

Abstract

Abundant novel physical properties have been observed in thin-flake samples of two-dimensional correlated electronic systems prepared by mechanical exfoliation. Developing new methods of preparing bulk two-dimensional samples can further understand the low-dimensional system by combining traditional bulk characterization methods like X-ray diffraction, magnetic susceptibility and specific heat measurements. It is possible to maintain the novel properties of thin-flake samples in bulk state and promote these novel physical properties for potential applications. This article introduces a class of organic molecular intercalation methods to regulate two-dimensional correlated electronic systems, focusing on the changes of structure and physical properties of two-dimensional materials after organic molecular intercalation. The applications of organic molecular intercalation method in regulating thermoelectricity, two-dimensional magnetism, charge density wave and two-dimensional superconductivity are also presented.

Keywords:

Authors and contacts

1.
Department of Physics, University of Science and Technology of China, Hefei 230026, China
2.
CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
3.
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
4.
CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China

Corresponding author: Chen Xian-Hui, chenxh@ustc.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2017YFA0303001), the National Natural Science Foundation of China (Grant No. 11888101), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB25000000), the Anhui Initiative in Quantum Information Technologies, China (Grant No. AHY160000), and the Key Research Program of Frontier Sciences, CAS, China (Grant No. QYZDYSSW-SLH021).

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References

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Cited By

图 1 电化学有机分子插层的过程及结构演化　(a)电化学电解池的结构及电荷流动示意图, 包括工作电极(固定有二维材料的In丝)、对电极(Ag片)和电解液(溶有季铵盐的有机溶液); (b), (c) CTA⁺插层TaS₂前后的结构示意图, 其中有机分子CTA⁺垂直于TaS₂的ab面^[11]; (d), (e), (f) (TBA)_xFeSe^[12], (CTA)_xFeSe^[13]以及(TBA)_xCr₂Ge₂Te₆^[25]的结构示意图, 其中TBA⁺在层间单层排列, CTA⁺在层间以双层平行排列; (g), (h) (Cp)₂Co插层SnSe₂的STM形貌图和其对应的结构示意图, 有机分子(Cp)₂Co的五元环平面与SnSe₂的ab面垂直^[18]; (i) (CTA)_xFeSe的STM形貌图, 其中CTA⁺分子在FeSe层间紧密排列, 且CTA⁺分子的长链与FeSe的ab面平行^[13]

Figure 1. Process of the electrochemical intercalation and the structure of the intercalated materials: (a) The illustration of the electrolytic cell which includes the working electrode (In wire fixed with two-dimensional material), counter electrode (Ag sheet) and the electrolyte (organic solution containing quaternary ammonium salt). (b), (c) The structure of TaS₂ and (CTA)_xTaS₂ , respectively. The organic molecule CTA⁺ is perpendicular to the ab plane of TaS₂^[11]. (d), (e), (f) The structure of (TBA)_xFeSe^[12], (CTA)_xFeSe^[13] and (TBA)_xCr₂Ge₂Te₆^[25], respectively. The TBA⁺ is arranged in a monolayer mode, while CTA⁺ is arranged in a double-layer mode. (g), (h) The STM image and surface structure of (Cp)₂Co intercalated SnSe₂. The five-membered ring plane of organic molecule (Cp)₂Co is perpendicular to the ab plane of SnSe₂^[18]. (i) The STM image of (CTA)_xFeSe. The CTA⁺ molecules are closely arranged in the interlayer of FeSe, and the long chain of CTA⁺ molecules is parallel to the ab plane of FeSe^[13].

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图 2 Cr₂Ge₂Te₆中插层TBA⁺分子后的结构和磁作用机制变化　(a), (b) Cr₂Ge₂Te₆插层TBA⁺分子前后的结构示意图^[25]; (c) Cr₂Ge₂Te₆插层TBA⁺分子前(左图)和插层TBA⁺分子后(右图)的磁性作用机制示意图^[25]

Figure 2. Changes of structure and magnetism origin in TBA⁺ intercalated Cr₂Ge₂Te₆: (a), (b) The structure of Cr₂Ge₂Te₆ and (TBA)_xCr₂Ge₂Te₆^[25]; (c) the magnetism exchange interaction of Cr₂Ge₂Te₆ (left panel) and (TBA)_xCr₂Ge₂Te₆ (right panel)^[25].

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图 3 VSe₂中插层TBA⁺分子后的结构和能带结构变化　(a), (b) VSe₂和(TBA)_xVSe₂的结构示意图^[27]; (c)—(f) 第一性原理计算的VSe₂的层间距离为6.12, 8.62, 11.02, 18.62 Å时对应的能带结构^[27]; (g)—(j) 第一性原理计算的VSe₂的层间距离为18.62 Å时, 费米面移动0, 0.05, 0.1, 0.15 eV后, 能带结构的演化, 其对应的费米面嵌套波失分别为1/4a^*, 0.26a^*, 0.29a^*, 1/3a^*^[27]

Figure 3. Changes of crystal structure and Fermi surface topology in the TBA⁺ intercalated VSe₂: (a), (b) The crystal structure of VSe₂ and (TBA)_xVSe₂^[27]. (c)–(f) The calculated Fermi surface topology of VSe₂ with the interlayer distance of 6.12, 8.62, 11.02 and 18.62 Å^[27]. (g)–(j) The calculated Fermi surface topology of VSe₂ with the different amount of Fermi surface shift with the interlayer distance at 18.62 Å. The shift amount is 0, 0.05, 0.1 and 0.15 eV, respectively. The nesting vectors are 1/4a^*, 0.26a^*, 0.29a^*, 1/3a^*^[27]

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图 4 (CTA)_xSnSe₂中的二维超导与(TBA)_xFeSe中的赝能隙相图　(a) (CTA)_xSnSe₂在超导转变温度附近的I-V曲线^[26]; (b) (CTA)_xSnSe₂的R(T)曲线, 其中纵坐标是(d lnR(T)/dT)^–2/3 ^[26]; (c)从(CTA)_xSnSe₂的I-V曲线中分离出来的幂指数α; (d) (TBA)_xFeSe的磁场-温度相图, 其中T_c0是零电阻温度, T_c是通过NMR谱线展宽和电阻曲线一阶微分定义的超导转变温度, T_p是电子预配对的温度^[13]

Figure 4. Quasi-two-dimensional superconductivity in (CTA)_xSnSe₂ and the pseudogap behavior in (TBA)_xFeSe: (a) The I-V curves of (CTA)_xSnSe₂ around the T_c^[26]; (b) the R(T) curve of (CTA)_xSnSe₂ with the Y axis at the scale of (d lnR(T)/dT)^–2/3 ^[26]; (c) the temperature dependent index α of (CTA)_xSnSe₂ using the fitting formula $ V \propto {I^\alpha } $^[26]; (d) the Field-Temperature phase diagram of (TBA)_xFeSe. The T_c0 is the zero-resistance critical temperature; T_c is the superconducting temperature defined by the onset temperature of NMR line broadening and the first derivative of resistance data; T_p is the onset temperature of the pseudogap behavior^[13].

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map

[1]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147 Google Scholar
[2]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y 2014 Nat. Nanotechnol. 9 372 Google Scholar
[3]	Wang E Y, Ding H, Fedorov A V, Yao W, Li Z, Lv Y F, Zhao K, Zhang L G, Xu Z J, Schneeloch J, Zhong R D, Ji S H, Wang L L, He K, Ma X C, Gu G D, Yao H, Xue Q K, Chen X, Zhou S Y 2013 Nat. Phys. 9 621 Google Scholar
[4]	Zhang Z C, Wang Y H, Song Q, Liu C, Peng R, Moler K A, Feng D L, Wang Y Y 2015 Sci. Bull. 60 1301 Google Scholar
[5]	Huang B, Clark G, Navarro-Moratalla E, Klein D R, Cheng R, Seyler K L, Zhong D, Schmidgall E, McGuire M A, Cobden D H, Yao W, Xiao D, Jarillo-Herrero P, Xu X 2017 Nature 546 270 Google Scholar
[6]	Deng Y, Yu Y, Song Y, Zhang J, Wang N Z, Sun Z, Yi Y, Wu Y Z, Wu S, Zhu J, Wang J, Chen X H, Zhang Y 2018 Nature 563 94 Google Scholar
[7]	Kamysbayev V, Filatov A S, Hu H, Rui X, Lagunas F, Wang D, Klie R F, Talapin D V 2020 Science 369 979 Google Scholar
[8]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805 Google Scholar
[9]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X, Tomanek D, Ye P D 2014 ACS Nano 8 4033 Google Scholar
[10]	Lu X, Stepanov P, Yang W, Xie M, Aamir M A, Das I, Urgell C, Watanabe K, Taniguchi T, Zhang G, Bachtold A, MacDonald A H, Efetov D K 2019 Nature 574 653 Google Scholar
[11]	Wang N Z, Shi M Z, Shang C, Meng F B, Ma L K, Luo X G, Chen X H 2018 New J. Phys. 20 023014 Google Scholar
[12]	Shi M Z, Wang N Z, Lei B, Ying J J, Zhu C S, Sun Z L, Cui J H, Meng F B, Hang C S, Ma L K, Chen X H 2018 New J. Phys. 20 123007 Google Scholar
[13]	Kang B L, Shi M Z, Li S J, Wang H H, Zhang Q, Zhao D, Li J, Song D W, Zheng L X, Nie L P, Wu T, Chen X H 2020 Phys. Rev. Lett. 125 097003 Google Scholar
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[15]	Zhu R L, Zhu L Z, Zhu J X, Xu L H 2008 Appl. Clay Sci. 42 224 Google Scholar
[16]	Ganter P, Schoop L M, Lotsch B V 2017 Adv. Mater. 29 1604884 Google Scholar
[17]	Gamble F R, Osiecki J H, Cais M, Pisharody R, Disalvo F J, Geballe T H 1971 Science 174 493 Google Scholar
[18]	Li Z, Zhao Y, Mu K, Shan H, Guo Y, Wu J, Su Y, Wu Q, Sun Z, Zhao A, Cui X, Wu C, Xie Y 2017 J. Am. Chem. Soc. 139 16398 Google Scholar
[19]	Gao Z, Zeng S Y, Zhu B C, Li B A, Hao Q Y, Hu Y W, Wang D K, Tang K B 2018 Sci. Chin. -Mater. 61 977 Google Scholar
[20]	Bartlett N, McQuillan B W (Whittingham M S, Jacobson A J, Eds) 1982 Intercalation Chemistry (New York: Academic Press) pp19–53
[21]	Yoo H D, Liang Y L, Dong H, Lin J H, Wang H, Liu Y S, Ma L, Wu T P, Li Y F, Ru Q, Jing Y, An Q Y, Zhou W, Guo J H, Lu J, Pantelides S T, Qian X F, Yao Y 2017 Nat. Commun. 8 339 Google Scholar
[22]	Rendenbach B, Hohl T, Harm S, Hoch C, Johrendt D 2021 J. Am. Chem. Soc. 143 3043 Google Scholar
[23]	Wan C, Gu X, Dang F, Itoh T, Wang Y, Sasaki H, Kondo M, Koga K, Yabuki K, Snyder G J, Yang R, Koumoto K 2015 Nat. Mater. 14 622 Google Scholar
[24]	Jin S F, Fan X, Wu X Z, Sun R J, Wu H, Huang Q Z, Shi C L, Xi X K, Li Z L, Chen X L 2017 Chem. Commun. 53 9729 Google Scholar
[25]	Wang N, Tang H, Shi M, Zhang H, Zhuo W, Liu D, Meng F, Ma L, Ying J, Zou L, Sun Z, Chen X 2019 J. Am. Chem. Soc. 141 17166 Google Scholar
[26]	Ma L K, Shi M Z, Kang B L, Peng K L, Meng F B, Zhu C S, Cui J H, Sun Z L, Wang H H, Lei B, Wu T, Chen X H 2020 Phys. Rev. Mater. 4 124803 Google Scholar
[27]	Meng F B, Liu Z, Yang L X, Shi M Z, Ge B H, Zhang H, Ying J J, Wang Z F, Wang Z Y, Wu T, Chen X H 2020 Phys. Rev. B 102 165410 Google Scholar
[28]	Gong C, Li L, Li Z, Ji H, Stern A, Xia Y, Cao T, Bao W, Wang C, Wang Y, Qiu Z Q, Cava R J, Louie S G, Xia J, Zhang X 2017 Nature 546 265 Google Scholar
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[30]	Hu G B, Shi M Z, Wang W X, Zhu C S, Luo X G, Chen X H 2022 New J. Phys. 24 043035 Google Scholar

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