Design and simulation of Mg<sub>2</sub>Si/Si avalanche photodiode

Wang Ao-Shuang; Xiao Qing-Quan; Chen Hao; He An-Na; Qin Ming-Zhe; Xie Quan

doi:10.7498/aps.70.20201923

Abstract

InGaAs and HgCdTe materials are widely used in short wave infrared photodetectors, which contain heavy metal elements. The massive use of the heavy metal elements naturally results in their scarcity, and the nonnegligible environmental pollution. Searching for other suitable materials for infrared devices becomes a key to solving the above problems. As a kind of abundant and eco-friendly material, Mg₂Si has a high absorption coefficient in the near-infrared band. Its application in infrared detector makes it possible to replace the infrared devices containing toxic elements on the market in the future. The Mg₂Si/Si avalanche photodiode(APD) with separation structure of absorption layer, charge layer and multiplication layer, with Mg₂Si serving as the absorption layer, is constructed by using the Atlas module in Silvaco software. The effects of the thickness and doping concentration of the charge layer and multiplier layer on the distribution of internal electric field, punch-through voltage, breakdown voltage (V_b), C-V characteristics, and transient response of Mg₂Si/Si SACM-APD are simulated. The effects of bias voltage on the I-V characteristics and spectral response are analyzed. The punch-through voltage, breakdown voltage, dark current density, gain coefficient (M_n) and the current amplification factor (M) after avalanche effect of APD are obtained after the structure optimization. According to the simulation results, the spectral response wavelength of the device is extended to 1.6 μm, so the selection of Mg₂Si as the absorption layer effectively extends the spectral response band of Si based APD. When the wavelength of incident light is 1.31 µm and the optical power is 10 mW/cm², the obtained punch-through voltage is 17.5 V, and the breakdown voltage is 50 V. When the bias voltage is 47.5 V (0.95V_b), the peak value of spectral response is 25 A/W at a wavelength of 1.1 μm, a density of dark current is about 3.6 × 10^–5 A/cm², a multiplication factor M_n is 19.6, and M_n achieves a maximum value of 102 when the device is broken down. Meanwhile, the current amplification factor M after avalanche effect is 75.4, and the current gain effect of the SACM structure is obvious. The peak value of spectral response for the pin-type photodiode in the previous study is only 0.742 A/W. Comparing with the pin-type photodiode, the spectral response of Mg₂Si/Si SACM-APD is greatly improved. In this work, the structure parameters of the device are optimized, which lays a nice foundation for fabricating the high-performance devices.

Keywords:

Authors and contacts

Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China

Corresponding author: Xiao Qing-Quan, qqxiao@gzu.edu.cn

Funds: Project supported by the Foundation for Sci-tech Activities for the Overseas Chinese Returnees in Guizhou Province, China (Grant No. [2018]09), the High-level Creative Talent Training Program in Guizhou Province of China (Grant No. [2015]4015), and the Graduate Research Fund in Guizhou Province of China (Grant No. [2020]035)

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References

[1]	莫秋燕, 赵彦立 2011 60 072902 Google Scholar Mo Q Y, Zhao Y L 2011 Acta Phys. Sin. 60 072902 Google Scholar
[2]	Park S M, Grein C H 2019 J. Electron. Mater. 48 8163 Google Scholar
[3]	Rogalski A 2005 Rep. Prog. Phys. 68 2267 Google Scholar
[4]	Xu S J, Chua S J, Mei T, Wang X C, Zhang X H, Karunasiri G, Fan W J, Wang C H, Jiang J, Wang S, Xie X G 1998 Appl. Phys. Lett. 73 3153 Google Scholar
[5]	Rogalski A 2002 Infrared. Phys. Technol. 43 187 Google Scholar
[6]	Rogalski A 2011 Infrared. Phys. Technol. 54 136 Google Scholar
[7]	胡伟达, 李庆, 陈效双, 陆卫 2019 68 120701 Google Scholar Hu W D, Li Q, Chen X S, Lu W 2019 Acta Phys. Sin. 68 120701 Google Scholar
[8]	LaBotz R 1963 J. Electrochem. Soc. 110 127 Google Scholar
[9]	Kato T, Sago Y, Fujiwara H 2011 J. Appl. Phys. 110 063723 Google Scholar
[10]	Borisenko V E 2000 Semiconducting Silicides (New York: Springer) pp137−179
[11]	Au-Yang M Y, Cohen M L 1969 Phys. Rev. 178 1358 Google Scholar
[12]	Liao Y F, Fan M H, Xie Q, Xiao Q Q, Xie J, Yu H, Wang S L, Ma X Y 2018 Appl. Surf. Sci. 403 302 Google Scholar
[13]	Janega P L, McCaffrey J, Landheer D, Buchanan M, Denhoff M, Mitchel D 1988 Appl. Phys. Lett. 53 2056 Google Scholar
[14]	Udono H, Tajima H, Uchikoshi M, Itakura M 2015 Jpn. J. Appl. Phys. 54 07JB06 Google Scholar
[15]	Udono H, Yamanaka Y, Uchikoshi M, Isshiki M 2013 J. Phys. Chem. Solids. 74 311 Google Scholar
[16]	El-Amir A A M, Ohsawa T, Nabatame T, Ohia A, Wadaa Y, Nakamuraa M, Fua K, Shimamuraa K, Ohashia N 2019 Mater. Sci. Semicond. Process. 91 222 Google Scholar
[17]	陈豪, 肖清泉, 谢泉, 王坤, 史娇娜 2019 材料导报 33 3358 Google Scholar Chen H, Xiao Q Q, Xie Q, Wang K, Shi J N, 2019 Mater. Rep. 33 3358 Google Scholar
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[19]	张海燕, 汪琳莉, 吴琛怡, 王煜蓉, 杨雷, 潘海峰, 刘巧莉, 郭霞, 汤凯, 张忠萍, 吴光 2020 69 074204 Google Scholar Zhang H Y, Wang L L, Wu C Y, Wang Y R, Yang L, Pang H F, Liu Q L, Guo X, Tang K, Zhang Z P, Wu G 2020 Acta Phys. Sin. 69 074204 Google Scholar
[20]	Nishida K, Taguchi K, Matsumoto Y 1979 Appl. Phys. Lett. 35 251 Google Scholar
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[26]	谢天, 叶新辉, 夏辉, 李菊柱, 张帅君, 姜新洋, 邓伟杰, 王文静, 李玉莹, 刘伟伟, 李翔, 李天信 2020 红外与毫米波学报 39 0583 Google Scholar Xie T, Ye X H, Xia H, Li J Z, Zhang S J, Jiang X Y, Deng W J, Wang W J, Li Y Y, Liu W W, Li X, Li T X 2020 J. Infrared Millim. W. 39 0583 Google Scholar
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图 1 SACM-APD结构示意图

Figure 1. Schematic diagram of SACM-APD.

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图 2 APD的能带结构图

Figure 2. Energy band structure diagram of the APD.

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图 3 Mg₂Si与c-Si的光学特性　(a) Mg₂Si与c-Si的吸收系数(cm^–1)与入射能量的关系; (b) Mg₂Si与c-Si的折射率与波长的关系

Figure 3. Optical properties of Mg₂Si and c-Si: (a) Absorption coefficient(cm^–1) of the poly-Mg₂Si and c-Si; (b) refractive Index of the poly-Mg₂Si and c-Si.

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图 4 (a) 电荷层厚度为0.1 µm时器件的电场分布; (b) 电荷层厚度为0.2 µm时器件的电场分布

Figure 4. (a) Electric field distribution of the device with charge layer thickness of 0.1 µm; (b) electric field distribution of the device with charge layer thickness of 0.2 µm.

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图 5 Mg₂Si/Si SACM-APD器件在不同偏压下内部的载流子生成率

Figure 5. The influence of the different Bias voltage on the carrier generation rate.

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图 6 倍增层不同掺杂浓度时倍增层的电场分布

Figure 6. Electric field distribution of the multiplier layer under different doping concentrations.

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图 7 电荷层厚度、掺杂浓度与击穿电压和穿通电压之间的关系

Figure 7. The relation between the thickness and doping concentration of charge layer and the breakdown voltage, the punch-through voltage.

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图 8 不同倍增层厚度时的击穿电压与穿通电压

Figure 8. Breakdown voltage and penetration voltage at different thicknesses of the multiplier layer.

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图 9 倍增层不同掺杂浓度与穿通电压和击穿电压关系

Figure 9. Breakdown voltage and penetration voltage at different doping concentration of the multiplier layer.

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图 10 APD的I-V特性与增益系数

Figure 10. I-V characteristics and gain coefficient of APD.

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图 11 不同的偏置电压对APD光谱响应的影响

Figure 11. Effect of different bias voltages on the spectral response of APD.

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图 12 倍增层厚度对器件电容的影响

Figure 12. The influence of the thickness of multiplication layer on the capacitance of the device.

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图 13 不同倍增层厚度时器件的瞬态响应

Figure 13. Transient response of the device for different thickness of the multiplication layer.

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表 1 APD的结构参数

Table 1. Structural parameters of the APD.

层名	符号	厚度/μm	符号	浓度掺杂/ × 10¹⁶ cm^–3
金属电极层	—	0.1	—	0
Mg₂Si接触层	W_p	0.15	N_p	500
Mg₂Si吸收层	W_a	0.6—4	N_a	0.1
Si电荷层	W_c	0.1—0.3	N_c	6—14
Si倍增层	W_m	1	N_m	0.01—1
Si缓冲层	W_b	0.5	N_b	100
Si衬底	W_s	3.5	N_s	1000

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表 2 模拟计算中采用的各层基本参数

Table 2. The parameters of different layers in the simulation.

参数	Mg₂Si	c-Si^[21]
相对介电常数	20^[21]	11.9
电子迁移率/(cm²·V^–1·S^–1)	550^[21]	1350
空穴迁移率/(cm²·V^–1·S^–1)	70^[15]	500
材料带隙/eV	0.77^[9,21]	1.12
导带有效态密度/cm^–3	7.8 × 10¹⁸	2.8 × 10¹⁹
价带有效态密度/cm^–3	2.06 × 10¹⁹	1.04 × 10¹⁹
电子亲和力/eV	4.37^[21,22]	4.05

DownLoad: CSV

表 3 模拟结果与目前国际水平对比

Table 3. Comparison of simulation results with current international level.

材料	暗电流密度/(A·cm^–2)	光谱响应/(A·W^–1)
InGaAs	5 × 10^–4^[26]	1.2^[26]
InGaAs/InP	7 × 10^–10^[26]	—
HgCdTe/CdTe/Si	0.007^[26]	—
HgCdTe/CdZnTe	2.7 × 10^–5^[27]	1.45^[27]
Mg₂Si	0.04^[14,16]	0.014^[14,16]
Mg₂Si/Si-pn	6 × 10^–7^[17]	0.32^[17]
Mg₂Si/Si-pin	1 × 10^–6^[17]	0.742^[17]
Mg₂Si/Si-SACM	3.6 × 10^–5	25

DownLoad: CSV

map

[1]	莫秋燕, 赵彦立 2011 60 072902 Google Scholar Mo Q Y, Zhao Y L 2011 Acta Phys. Sin. 60 072902 Google Scholar
[2]	Park S M, Grein C H 2019 J. Electron. Mater. 48 8163 Google Scholar
[3]	Rogalski A 2005 Rep. Prog. Phys. 68 2267 Google Scholar
[4]	Xu S J, Chua S J, Mei T, Wang X C, Zhang X H, Karunasiri G, Fan W J, Wang C H, Jiang J, Wang S, Xie X G 1998 Appl. Phys. Lett. 73 3153 Google Scholar
[5]	Rogalski A 2002 Infrared. Phys. Technol. 43 187 Google Scholar
[6]	Rogalski A 2011 Infrared. Phys. Technol. 54 136 Google Scholar
[7]	胡伟达, 李庆, 陈效双, 陆卫 2019 68 120701 Google Scholar Hu W D, Li Q, Chen X S, Lu W 2019 Acta Phys. Sin. 68 120701 Google Scholar
[8]	LaBotz R 1963 J. Electrochem. Soc. 110 127 Google Scholar
[9]	Kato T, Sago Y, Fujiwara H 2011 J. Appl. Phys. 110 063723 Google Scholar
[10]	Borisenko V E 2000 Semiconducting Silicides (New York: Springer) pp137−179
[11]	Au-Yang M Y, Cohen M L 1969 Phys. Rev. 178 1358 Google Scholar
[12]	Liao Y F, Fan M H, Xie Q, Xiao Q Q, Xie J, Yu H, Wang S L, Ma X Y 2018 Appl. Surf. Sci. 403 302 Google Scholar
[13]	Janega P L, McCaffrey J, Landheer D, Buchanan M, Denhoff M, Mitchel D 1988 Appl. Phys. Lett. 53 2056 Google Scholar
[14]	Udono H, Tajima H, Uchikoshi M, Itakura M 2015 Jpn. J. Appl. Phys. 54 07JB06 Google Scholar
[15]	Udono H, Yamanaka Y, Uchikoshi M, Isshiki M 2013 J. Phys. Chem. Solids. 74 311 Google Scholar
[16]	El-Amir A A M, Ohsawa T, Nabatame T, Ohia A, Wadaa Y, Nakamuraa M, Fua K, Shimamuraa K, Ohashia N 2019 Mater. Sci. Semicond. Process. 91 222 Google Scholar
[17]	陈豪, 肖清泉, 谢泉, 王坤, 史娇娜 2019 材料导报 33 3358 Google Scholar Chen H, Xiao Q Q, Xie Q, Wang K, Shi J N, 2019 Mater. Rep. 33 3358 Google Scholar
[18]	Forrest S R, Kim O K, Smith R G 1982 Appl. Phys. Lett. 41 95 Google Scholar
[19]	张海燕, 汪琳莉, 吴琛怡, 王煜蓉, 杨雷, 潘海峰, 刘巧莉, 郭霞, 汤凯, 张忠萍, 吴光 2020 69 074204 Google Scholar Zhang H Y, Wang L L, Wu C Y, Wang Y R, Yang L, Pang H F, Liu Q L, Guo X, Tang K, Zhang Z P, Wu G 2020 Acta Phys. Sin. 69 074204 Google Scholar
[20]	Nishida K, Taguchi K, Matsumoto Y 1979 Appl. Phys. Lett. 35 251 Google Scholar
[21]	Deng Q, Wang Z, Wang S, Shao G D 2017 Sol. Energy 158 654 Google Scholar
[22]	Sekino K, Midonoya M, Udono H, Yamada Y Udono H 2011 Phys. Procedia 11 171 Google Scholar
[23]	Martin A G 2008 Sol. Energy Mater. Sol. Cells 92 1305 Google Scholar
[24]	Park C Y, Hyun K, Kang S G, Kim H M 1995 Appl. Phys. Lett. 67 3789 Google Scholar
[25]	Smetona S, Matukas J, Palenskis V, Olechnovicius M, A. Kaminskas K, Mallard R 2004 Proceedings of SPIE-Photonics North 2004: Optical Components and Devices Ottawa, Canada, September 26–29, 2004 p834
[26]	谢天, 叶新辉, 夏辉, 李菊柱, 张帅君, 姜新洋, 邓伟杰, 王文静, 李玉莹, 刘伟伟, 李翔, 李天信 2020 红外与毫米波学报 39 0583 Google Scholar Xie T, Ye X H, Xia H, Li J Z, Zhang S J, Jiang X Y, Deng W J, Wang W J, Li Y Y, Liu W W, Li X, Li T X 2020 J. Infrared Millim. W. 39 0583 Google Scholar
[27]	Yuan H, Zhang J, Kim J, Meyer C, Laquindanum J, Kimchi J, Lei J 2018 Proceedings of SPIE -Infrared Sensors, Devices, and Applications VIII San Diego, United States, August 22–23, 2018 p107660 J-1
[28]	Wang Y D, Chen J, Xu J D, Li X Y 2018 Infrared Phys. Technol. 89 41 Google Scholar
[29]	施敏, 伍国珏著 (耿莉, 张瑞智译) 2008 半导体器件物理 (第3版) (西安: 西安交通大学出版社) 第514−523页 Sze S M, K. Ng K (translated by Geng L, Wu G J) 2008 Physics of Semiconductor Devices (3rd Ed.) (Xi’an: Xi’an Jiaotong University Press) pp514−523 (in Chinese)
[30]	Lee M J, Rucker H, Choi W Y 2012 IEEE Electron Device Lett. 33 80 Google Scholar

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Design and simulation of Mg₂Si/Si avalanche photodiode

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Corresponding author: Xiao Qing-Quan, qqxiao@gzu.edu.cn

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Design and simulation of Mg2Si/Si avalanche photodiode

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Corresponding author: Xiao Qing-Quan, qqxiao@gzu.edu.cn

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Design and simulation of Mg₂Si/Si avalanche photodiode