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Near-field thermal radiation refers to the radiation produced by two radiators in a narrow gap that is smaller than the characteristic wavelength. The studies of near-field thermal radiation began in the 1960s and 1970s. Some researchers have reported that near-filed thermal radiation can be enhanced by orders of magnitude higher than that of far-field radiation by photon tunneling and surface polariton. With the development and application of nanotechnology, the near-field heat radiation has developed into a research hotspot in the field of heat radiation. Recent studies have shown that the properties of near-field thermal radiation can be enhanced by optimizing the structures of radiators (covered by two-dimensional (2D) materials, such as graphene and black phosphorus), choosing radiation materials (hexagonal boron nitride, silicon dioxide, vanadium dioxide), and selecting appropriate physical parameters (chemical potential, vacuum distance, film thickness) of the radiator materials. According to the fluctuation dissipation theory and by solving the Maxwell equation and the green's function, in this article we report the near-field thermal radiation of the two half-infinite flats, including vanadium dioxide V/V, vanadium dioxide covered by graphene GV/GV and vanadium dioxide film covered by graphene GV0/GV0. The near-field thermal radiations in these structures are influenced by physical parameters, such as vacuum spacing, thickness of vanadium dioxide film and chemical potential of graphene. The results show that near-field thermal radiation of GV0/GV0 (38088.43 W/m2) is 8.6 times stronger than that of GV/GV (4426.73 W/m2, vacuum distance is 10 nm, chemical potential is 0.1 eV), and near-field thermal radiation of GV/GV (4426.73 W/m2) is 35 times stronger than that of V/V (127.21 W/m2, vacuum distance is 10 nm, chemical potential is 0.1 eV). For these three structures, thermal radiation decreases gradually by widening the vacuum distance. Moreover, thermal radiation also decreases by thickening vanadium dioxide film. While thermal radiation of GV0/GV0 decreases 3.34 times as chemical potential of graphene increases from 0.1 (38088.43 W/m2) to 0.6 eV (11399.80 W/m2). In this paper, the near-field heat radiation between vanadium dioxide and graphene is systematically investigated, which will give the guidance in the relevant experiment and practical applications of near-field heat radiation between vanadium dioxide and graphene.
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Keywords:
- near-field thermal radiation /
- film thickness /
- graphene /
- vanadium dioxide
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[5] 赵启梅 2018 硕士学位论文 (南昌: 南昌大学)
Zhao Q M 2018 M. A. Thesis (Nanchang: Nanchang University) (in Chinese)
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Zhang Z M(translated by Cheng Q, Wang Z C, Zhang X, Zhou H C)2007 Nano/Microscale Heat Transfer (Beijing: Tsinghua University Press) p258 (in Chinese)
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图 1 (a)无石墨烯覆盖的近场热辐射模型; (b)石墨烯覆盖VO2薄膜的近场热辐射模型
Figure 1. (a) The near-field thermal radiation between bulk VO2; (b) the near-field thermal radiation between VO2 films covered by graphene.
图 2 (a) 真空间距对辐射热流的影响; (b) 真空间距d = 10 nm, 石墨烯化学势
$\mu = 0.1$ eV时的光谱辐射通量Figure 2. (a) Heat flux in different structures at different vacuum spacing; (b) spectral heat flux with d = 10 nm and
$\mu = 0.1$ eV.
图 3 (a)−(e)
$\mu = 0.1$ eV时光子隧穿概率的等值线图, 其中(a), (b)为 GV/GV结构, (c)−(e)为 GV0/GV0结构; (f)$\mu = 0.6$ eV时GV/GV结构的光子隧穿概率的等值线图Figure 3. (a)−(e) Photon tunneling probability at
$\mu = 0.1$ eV: (a), (b) GV/GV structure; (c)−(e) GV0/GV0 structure; (f) photon tunneling probability at$\mu = 0.6$ eV.
图 4 (a) 不同的石墨烯化学势情况下, 辐射热流随VO2薄膜厚度变化的曲线图; (b)不同VO2薄膜厚度时的光谱辐射通量
Figure 4. (a) Heat flux at different graphene chemical potentials on different thickness of VO2 film; (b) spectral heat flux at different vanadium dioxide film thickness.
图 5 GV0/GV0结构光子隧穿概率的等值线图 (a), (b)
$\mu = 0.1$ eV; (c), (d)$\mu = 0.6$ eVFigure 5. Photon tunneling probability of GV0/GV0 structure: (a), (b)
$\mu = 0.1$ eV; (c), (d)$\mu = 0.6$ eV.
图 6 在石墨烯不同的化学势情况下, 真空间距对辐射热流的影响 (a)表示GV/GV结构; (b)表示GV0/GV0结构
Figure 6. Heat flux with different vacuum spacing at different graphene chemical potentials: (a) GV/GV structure; (b) GV0/GV0structure.
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[1] 刘扬, 潘登, 陈文, 王文强, 沈昊, 徐红星 2020 69 036501
Google Scholar
Liu Y, Pan D, Chen W, Wang W Q, Shen H, Xu H X 2020 Acta Phys. Sin. 69 036501
Google Scholar
[2] ShiK Z, Bao F L, He S L 2017 ACS photonics 4 971
Google Scholar
[3] Ilic O, Jablan M, Joannopoulos J D, Celanovic I, Buljan H 2012 Phys. Rev. B 85 155422
Google Scholar
[4] Ge L X, Xu Z J, Cang Y P, Gong K 2019 Opt. Express 27 A1109
Google Scholar
[5] 赵启梅 2018 硕士学位论文 (南昌: 南昌大学)
Zhao Q M 2018 M. A. Thesis (Nanchang: Nanchang University) (in Chinese)
[6] Zhao B, Guizal B, Zhang Z M, Fan S H, Antezza M 2017 Phys. Rev. B 95 245437
Google Scholar
[7] Lim M, Lee S S, Lee B J 2013 Opt. Express 21 22173
Google Scholar
[8] Qazilbash M M, Brehm M, Andreev G O, Frenzel P C H, Chae B G, Kim B G, Yun S j, Kim H T, Balatsky A V, Shpyrko O G, Maple M B, Keilmann F, Basov D N 2009 Phys. Rev. B 79 075107
Google Scholar
[9] Manish K, Sunita R, Hyun H L 2019 J. Korean Phys. Soc. 75 519
Google Scholar
[10] Li S Y, Niklasson G A, Granqvist C G 2014 J. Appl. Phys. 115 053513
Google Scholar
[11] Choi H S, Ahn J S, Jung J H, Noh T W 1996 Phys. Rev. B 54 4621
Google Scholar
[12] Van Zwol P J, Joulain K, Abdallah P B, Chevrier J 2011 Phys. Rev. B 83 201404(R
Google Scholar
[13] Van Zwol P J, Ranno L, Chevrive J 2012 Phys. Rev. Lett. 108 234301
Google Scholar
[14] 张卓敏著 (程强, 王志超, 张险, 周怀春译) 2007 微纳尺度传热 (北京: 清华大学出版社) 第258页
Zhang Z M(translated by Cheng Q, Wang Z C, Zhang X, Zhou H C)2007 Nano/Microscale Heat Transfer (Beijing: Tsinghua University Press) p258 (in Chinese)
[15] Yang Y, Basu S, Wang L P 2013 Appl. Phys. Lett. 103 163101
Google Scholar
[16] Barker A S, Verleur H W, Guggenheim H J 1966 Phys. Rev. Lett. 17 1286
Google Scholar
[17] Messina R, Ben-Abdallah P 2013 Sci. Rep. 3 1383
Google Scholar
[18] Joulain K, Mulet J P, Marquier F, Carminati R, Greffet J J 2005 Surf. Sci. Rep. 57 59
Google Scholar
[19] Liu X L, Zhang R Z, Zhang Z M 2014 ACS Photonics 1 785
Google Scholar
[20] Biehs S A, Tschkikin M, Ben A P 2012 Phys. Rev. Lett. 109 104301
Google Scholar
[21] Shi K Z, Liao R, Cao G J, Bao F L, He S L 2018 Opt. Express 26 A591
Google Scholar
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