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Graphene exhibits excellent electronic and optical properties, which has been proposed as an advanced material for new generation of electronic and optical devices. We develop a detailed theoretical mode to investigate the optical properties of graphene-wafer systems. The photon-excited carriers and emission are obtained based on the mass-balance equation and the charge number conservation equation, which are derived from Boltzmann equation. The analytical results of photon excited carrier density and photon emission coefficient are achieved self-consistently in terahertz radiation fields. It is found that the photon excited carrier density increases with doped electron density or temperature decreasing. The higher the doped electron density and the lower the temperature, the larger the photon emission coefficient is. The optical emission increases with doped electron density increasing, and the optical emission increases with temperature decreasing. It shows that photon-excited carriers and emission of graphene can be effectively tuned by gate voltage. These theoretical results can be used to understand the relevant experimental findings. This theoretical study can benefit the applications in advanced optoelectronic devices based on graphene, especially terahertz devices.
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Keywords:
- graphene /
- terahertz /
- photon-excited carrier /
- photon-emission
[1] Yuan W J, Shi G Q 2013 J. Mater. Chem. A 1 10078
[2] He Q Y, Wu S X, Yin Z Y, Zhang H 2012 Chem. Sci. 3 1764
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[5] Wang X M, Tian H, Mohammad M A 2015 Nature Commun. 6 7767
[6] Zhao F, Liang Y, Cheng H H, Jiang L 2016 Energy Environ. Sci. DOI: 10.1039/C5EE03701H
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[9] Lui C H, Mak K F, Shan J H 2010 Phys. Rev. Lett. 105 127404
[10] Brida D 2012 Nature Commun. 4 1987
[11] Tao L, Chen Z, Li X, Yan K, Xu J B 2017 2D Mater. Appl. 1 19
[12] Kuzmenko A B, van Heumen E, Carbone F, van der Marel D 2008 Phys. Rev. Lett. 100 117401
[13] Li Z Q, Henriksen E A, Jiang Z, Hao Z, Martin M C 2008 Nat. Phys. 4 532
[14] Dong H M 2013 Acta Phys. Sin. 62 237804 (in Chinese)[董海明 2013 62 237804]
[15] Chen Z F, Li X M, Wang J Q 2017 ACS Nano 11 430
[16] Goossens S, Navickaite G, Monasterio C 2017 Nature Photon. 11 366
[17] Liu Z F 2017 Acta Phys. -Chim. Sin. 33 853
[18] Zheng S H, Tang X Y, Wu Z S 2017 ACS Nano 11 2171
[19] Qin H, Sun J D, Liang S X 2017 Carbon 116 760
[20] Geim A K, Novoselov K S 2007 Nat. Mater. 6 183
[21] Lei X L 2010 Balance Equation Approach to Electron Transport in Semiconductors (Singapore: World Scientific Publishing) pp78-102
[22] Liu E K, Zhu B S, Luo J S 2002 Semiconductor Physics (Beijing: National Defense Industry Press) pp54-56
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[1] Yuan W J, Shi G Q 2013 J. Mater. Chem. A 1 10078
[2] He Q Y, Wu S X, Yin Z Y, Zhang H 2012 Chem. Sci. 3 1764
[3] Dolleman R J, Davidovikj D, Santiago J 2016 Nano Lett. 16 568
[4] Liu M, Yin X B, Erick U A 2011 Nature 474 64
[5] Wang X M, Tian H, Mohammad M A 2015 Nature Commun. 6 7767
[6] Zhao F, Liang Y, Cheng H H, Jiang L 2016 Energy Environ. Sci. DOI: 10.1039/C5EE03701H
[7] Berciaud S 2010 Phys. Rev. Lett. 104 227401
[8] Freitag M, Chiu H Y, Steiner M, Perebeinos V, Avouris P 2010 Nature Nanotech. 5 497
[9] Lui C H, Mak K F, Shan J H 2010 Phys. Rev. Lett. 105 127404
[10] Brida D 2012 Nature Commun. 4 1987
[11] Tao L, Chen Z, Li X, Yan K, Xu J B 2017 2D Mater. Appl. 1 19
[12] Kuzmenko A B, van Heumen E, Carbone F, van der Marel D 2008 Phys. Rev. Lett. 100 117401
[13] Li Z Q, Henriksen E A, Jiang Z, Hao Z, Martin M C 2008 Nat. Phys. 4 532
[14] Dong H M 2013 Acta Phys. Sin. 62 237804 (in Chinese)[董海明 2013 62 237804]
[15] Chen Z F, Li X M, Wang J Q 2017 ACS Nano 11 430
[16] Goossens S, Navickaite G, Monasterio C 2017 Nature Photon. 11 366
[17] Liu Z F 2017 Acta Phys. -Chim. Sin. 33 853
[18] Zheng S H, Tang X Y, Wu Z S 2017 ACS Nano 11 2171
[19] Qin H, Sun J D, Liang S X 2017 Carbon 116 760
[20] Geim A K, Novoselov K S 2007 Nat. Mater. 6 183
[21] Lei X L 2010 Balance Equation Approach to Electron Transport in Semiconductors (Singapore: World Scientific Publishing) pp78-102
[22] Liu E K, Zhu B S, Luo J S 2002 Semiconductor Physics (Beijing: National Defense Industry Press) pp54-56
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