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In this paper, the dual-band and four-band plamon-induced transparency(PIT) hybrid model based on silver nanorod and silver nanodisk hybrid model are proposed. The electromagnetic characteristics of the two PIT hybrid models are also estimated respectively. The results show that in the double-band PIT model, the silver nanodisk (bright mode) and the silver nanorod (dark mode) can form the bright-dark-dark mode coupling. Because of the destructive interference produced by nanodisk and nanorod and the emergence of new SPs resonance modes between nanorod and nanorod, the double-band PIT model can produce two transparent windows. When the length of the nanorods and the distance between the nanorods and nanodisk are changed, the resonant frequencies and transmission amplitudes of two transparent windows will be changed accordingly. In the four-band PIT model, the silver nanodisk and the silver nanorods will form the dark-dark-bright-dark-dark mode coupling. The resonant peaks of four transparent windows almost coincide with those of the two asymmetric double-band PIT models. Therefore, the four-band PIT model can be regarded as the superposition of two asymmetric double-band PIT models. The resonant frequencies and transmission amplitudes of four transparent windows also vary with the the length of nanorods and the distance between nanorods and nanodisk. Finally, the sensing performance of the four-band PIT model is investigated. It is found that the model can produce four transparent windows from beginning to end when the refractive index of the background material is changed. As the refractive index is changed from 1.0 to 1.4, the resonant frequencies in four transparent windows are approximately linearly related to the refractive index. At the same time, the maximum sensitivity of the four transparent windows can reach 326.2625 (THz/RIU) and the maximum figure of merit can arrive at 26.4 (1/RIU), which is higher than those of similar similar sensors in other literatures. This work provides the theoretical support for these models’ potential applications in many areas such as optical storage, absorption, filtering and the design of sensors in infrared band. [1] Alp A, Ahmet A, Hatice A 2011 Nano Lett. 11 1685
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[2] Dong Z G, Liu H, Xu M X 2010 Opt. Express 18 18229
Google Scholar
[3] 马平平, 张杰, 刘焕焕 2016 65 217801
Google Scholar
Ma P P, Zhang J, Liu H H 2016 Acta Phys. Sin. 65 217801
Google Scholar
[4] Liu D D, Fu W, Shao J 2019 Plasmonics 14 663
Google Scholar
[5] Hu S, Liu D, Yang H L 2019 Opt. Commun. 450 202
Google Scholar
[6] Yang S Y, Xia X X, Liu Z 2016 J. Phys. Condens. Matter 28 445002
Google Scholar
[7] Cheng S J, Xu Z F, Yao D Y 2019 OSA Continuum 2 2137
Google Scholar
[8] Liu J T, Hu H F, Shao X P 2019 Opt. Lett. 44 3829
Google Scholar
[9] Zhou J S, Wang W J, Luo C Y 2019 Opt. Express 27 2363
Google Scholar
[10] Zhao Z Y, Gu Z D, Zhao H 2019 Opt. Mater. Express 9 1608
Google Scholar
[11] Liu Z Y, QiI L M, Sun D D 2019 Materials 12 841
Google Scholar
[12] Kim J Y, Soref R, R Walter 2010 Opt. Express 18 17997
Google Scholar
[13] Artar A, Ahmet A, Altug H 2011 Nano. Letter 11 1685
[14] Yin X G, Feng T H, Yip S P 2013 Appl. Phys. Lett. 103 021115
Google Scholar
[15] Khan A D, Amin M 2018 Opt. Mater. 79 480
Google Scholar
[16] Li H M, Xu Y Y 2019 Opt. Mater. Express 5 2107
Google Scholar
[17] Tang C, Niu Q S, Wang B X 2018 Plasmonics 14 533
Google Scholar
[18] Yu W, Meng H, Chen Z 2018 Opt. Commun. 414 29
Google Scholar
[19] Li W, Zhai X, Shang X 2017 Opt. Mater. Express 7 4269
Google Scholar
[20] Zhang S, Genov D A, Wang Y 2008 Phys. Rev. Lett. 101 047401
Google Scholar
[21] He J N, Wang J Q, Ding P 2015 Plasmonics 10 1115
Google Scholar
[22] Zhou X, Ou Y M, Tang B 2017 Opt. Commun. 384 65
Google Scholar
[23] Zhao L, Liu H, He Z H 2018 Opt. Express 26 12838
Google Scholar
[24] Cong L Q, Tan S Y, Yahiaoui R 2015 Appl. Phys. Lett. 106 031107
Google Scholar
[25] Chen C Y, Un L W, Tai N H 2009 Opt. Express 17 15372
Google Scholar
[26] Pan W, Yan Y J, Ma Y 2019 Opt. Commun. 431 115
Google Scholar
[27] Liu G L, He M X, Tian Z 2013 Appl.Opt. 52 5695
Google Scholar
[28] Wang B X, Zhai X, Wang G Z 2015 J. Appl. Phys. 117 014504
Google Scholar
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图 1 双频段PIT模型结构图 (a)三维空间结构图; (b)二维平面结构图
Figure 1. Schematic diagrams of dual-band PIT model: (a) Three-dimensional space schematic; (b) two-dimensional plane schematic.
图 2 纳米盘阵列、纳米棒阵列、单频段PIT模型、双频段PIT模型的透射曲线
Figure 2. Transmission spectra of the sole nanodisk array, the sole nanorod array, the single-band PIT model
图 3 双频段PIT模型在(a) dip A, (b) dip B, (c) dip C, (d) peak D, (e)peak E的电场分布
Figure 3. Distribution of electric field of dual-band PIT model at (a) dip A, (b) dip B, (c) dip C, (d) peak D and (e) peak E.and the dual-band PIT model.
图 4 改变银纳米盘与银纳米棒、银纳米棒与银纳米棒间隔g时透射率随频率的变化情况
Figure 4. Variation of transmission with frequency of different g.
图 5 改变银纳米棒长度L时, 透射率随频率的变化情况
Figure 5. Variation of transmission with frequency of different L
图 6 四频段PIT模型结构图 (a)三维空间结构图; (b)二维平面结构图
Figure 6. Schematic diagrams of four-band PIT model: (a) Three-dimensional space schematic; (b) two-dimensional plane schematic.
图 7 四频段PIT模型的透射曲线
Figure 7. The transmission of four-band PIT model.
图 8 两种双频段PIT模型与四频段PIT模型透射率对比
Figure 8. The comparison of transmission between two dual-band PIT models and four-band PIT model.
图 9 四频段PIT模型在(a) peak A, (b) peak B, (c) peak C, (d) peak D的电场分布
Figure 9. Distribution of electric field of four-band PIT model at (a) peak A, (b) peak B, (c) peak C, (d) peak D.
图 10 改变上棒长度L2时, 透射率随频率的变化
Figure 10. Variation of transmission with frequency of different L2.
图 11 改变下棒长度L1时, 透射率随频率的变化
Figure 11. Variation of transmission with frequency of different L1.
图 12 改变盘与棒之间、棒与棒之间的间隔g时透射率随频率的变化情况
Figure 12. Variation of transmission with frequency of different g.
图 13 不同背景材料下的透射窗对比
Figure 13. The variation of transmission windows with different background materials.
图 14 peak A和peak B随背景材料折射率的变化规律
Figure 14. The variation of peak A and peak B with different background materials.
图 15 peak C和peak D随背景材料折射率的变化规律
Figure 15. The variation of peak C and peak D with different background materials.
表 1 不同参考文献中传感器模型的FOM参数比较
Table 1. Comparison of FOM with reported sensor in different references.
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[1] Alp A, Ahmet A, Hatice A 2011 Nano Lett. 11 1685
Google Scholar
[2] Dong Z G, Liu H, Xu M X 2010 Opt. Express 18 18229
Google Scholar
[3] 马平平, 张杰, 刘焕焕 2016 65 217801
Google Scholar
Ma P P, Zhang J, Liu H H 2016 Acta Phys. Sin. 65 217801
Google Scholar
[4] Liu D D, Fu W, Shao J 2019 Plasmonics 14 663
Google Scholar
[5] Hu S, Liu D, Yang H L 2019 Opt. Commun. 450 202
Google Scholar
[6] Yang S Y, Xia X X, Liu Z 2016 J. Phys. Condens. Matter 28 445002
Google Scholar
[7] Cheng S J, Xu Z F, Yao D Y 2019 OSA Continuum 2 2137
Google Scholar
[8] Liu J T, Hu H F, Shao X P 2019 Opt. Lett. 44 3829
Google Scholar
[9] Zhou J S, Wang W J, Luo C Y 2019 Opt. Express 27 2363
Google Scholar
[10] Zhao Z Y, Gu Z D, Zhao H 2019 Opt. Mater. Express 9 1608
Google Scholar
[11] Liu Z Y, QiI L M, Sun D D 2019 Materials 12 841
Google Scholar
[12] Kim J Y, Soref R, R Walter 2010 Opt. Express 18 17997
Google Scholar
[13] Artar A, Ahmet A, Altug H 2011 Nano. Letter 11 1685
[14] Yin X G, Feng T H, Yip S P 2013 Appl. Phys. Lett. 103 021115
Google Scholar
[15] Khan A D, Amin M 2018 Opt. Mater. 79 480
Google Scholar
[16] Li H M, Xu Y Y 2019 Opt. Mater. Express 5 2107
Google Scholar
[17] Tang C, Niu Q S, Wang B X 2018 Plasmonics 14 533
Google Scholar
[18] Yu W, Meng H, Chen Z 2018 Opt. Commun. 414 29
Google Scholar
[19] Li W, Zhai X, Shang X 2017 Opt. Mater. Express 7 4269
Google Scholar
[20] Zhang S, Genov D A, Wang Y 2008 Phys. Rev. Lett. 101 047401
Google Scholar
[21] He J N, Wang J Q, Ding P 2015 Plasmonics 10 1115
Google Scholar
[22] Zhou X, Ou Y M, Tang B 2017 Opt. Commun. 384 65
Google Scholar
[23] Zhao L, Liu H, He Z H 2018 Opt. Express 26 12838
Google Scholar
[24] Cong L Q, Tan S Y, Yahiaoui R 2015 Appl. Phys. Lett. 106 031107
Google Scholar
[25] Chen C Y, Un L W, Tai N H 2009 Opt. Express 17 15372
Google Scholar
[26] Pan W, Yan Y J, Ma Y 2019 Opt. Commun. 431 115
Google Scholar
[27] Liu G L, He M X, Tian Z 2013 Appl.Opt. 52 5695
Google Scholar
[28] Wang B X, Zhai X, Wang G Z 2015 J. Appl. Phys. 117 014504
Google Scholar
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