Effect of Al doping on the reliability of HfO2 as a trapping layer: First-principles study

Jiang Xian-Wei; Dai Guang-Zhen; Lu Shi-Bin; Wang Jia-Yu; Dai Yue-Hua; Chen Jun-Ning

doi:10.7498/aps.64.091301

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Jiang Xian-Wei, Dai Guang-Zhen, Lu Shi-Bin, Wang Jia-Yu, Dai Yue-Hua, Chen Jun-Ning. Effect of Al doping on the reliability of HfO2 as a trapping layer: First-principles studyJ. Acta Physica Sinica, 2015, 64(9): 091301. DOI: 10.7498/aps.64.091301

Citation:

Jiang Xian-Wei, Dai Guang-Zhen, Lu Shi-Bin, Wang Jia-Yu, Dai Yue-Hua, Chen Jun-Ning. Effect of Al doping on the reliability of HfO2 as a trapping layer: First-principles studyJ. Acta Physica Sinica, 2015, 64(9): 091301. DOI: 10.7498/aps.64.091301

Citation:

Jiang Xian-Wei, Dai Guang-Zhen, Lu Shi-Bin, Wang Jia-Yu, Dai Yue-Hua, Chen Jun-Ning. Effect of Al doping on the reliability of HfO2 as a trapping layer: First-principles studyJ. Acta Physica Sinica, 2015, 64(9): 091301. DOI: 10.7498/aps.64.091301