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Cr films with different thickness values on W substrates are prepared by double-ion-beam-deposition(DIBD) method. The deep distributions of Cr and W are analyzed by energy dispersive spectrometer. Hydrogen and deuterium irradiation of high energy and low flux are carried out in heavy ion accelerator. The changes of the sample surface morphology are analyzed by scanning electron microscopy. The injection range of hydrogen particles in double layers of Cr/W is simulated by simulation software SRIM. The experimental results demonstrate that a Cr/W mixture transitional layer is formed at the interface between Cr and W using DIBD method; hydrogen and deuterium of high energy and low flux tend to be retained in the Cr/W mixture transitional layer and form gas bubbles, while the Cr film is not easy to retain enough hydrogen or deuterium to form gas bubbles.
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Keywords:
- Cr/W mixture transition layer /
- hydrogen or deuterium irradiation /
- double-ion-beam-deposition
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[27] Wan F R 1993 Irradiation Damage of Metal Materials (Beijing: Science Press) pp87-92 (in Chinese) [万发荣1993金属材料的辐照损伤(北京: 科学出版社)第87–92页]
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[1] Zhang Z J, Zhong Z H, Shen W P 2005 Mater. Rev. 19 56 (in Chinese) [周张健, 钟志宏, 沈卫平 2005 材料导报 19 56]
[2] Li Y K, Ji K J 1999 Mater. Rev. 13 5 (in Chinese) [李云凯, 纪康俊 1999 材料导报 13 5]
[3] L G H, Luo G N, Li J G 2010 Mater. Chin. 29 42 (in Chinese) [吕广宏, 罗广南, 李建刚 2010 中国材料进展 29 42]
[4] Wang X X, Zhang Y, Zhou H B, Wang J L 2014 Acta Phys. Sin. 63 046103 (in Chinese) [王欣欣, 张颖, 周洪波, 王金龙 2014 63 046103]
[5] Zou X Q, Xue J M, Wang Y G 2010 Chin. Phys. B 19 036102
[6] Yang X, Liu S, Zheng H, Zhao Y, Xiong L Y, Wang L B 2003 Acta Phys. Sin. 52 756 (in Chinese) [杨勋, 刘实, 郑华, 赵越, 熊良钺, 王隆保 2003 52 756]
[7] Liu Y L, Jin S, Zhang Y 2012 Chin. Phys. B 21 016105
[8] Luo G N, Shu W M, Nishi M 2006 Fusion Eng. Des. 81 957
[9] Liu Y L 2010 Ph. D. Dissertation (Beijing: Beijing University of Aeronautics and Astronautics) (in Chinese) [刘悦林 2010 博士学位论文(北京: 北京航空航天大学)]
[10] Lee H, Haasz A, Davis J, MacAulaynewcombe R, Whyte D, Wright G 2007 J. Nucl. Mater. 360 196
[11] Tyburska B, Alimov V K, Ogorodnikova O V, Schmid K, Ertl K 2009 J. Nucl. Mater. 390-391 651
[12] Wang W M, Roth J, Lindig S, Wu C H 2003 Nucl. Sci. Tech. 26 429 (in Chinese) [王玟珉, Roth J, Lindig S, Wu C H 2003 核技术 26 429]
[13] Shu W M, Nakamichi M, Alimov V K, Luo G N, Isobe K, Yamanishi T 2009 J. Nucl. Mater. 390–391 1017
[14] Zhang W Z, Tang X H, Li J Q, Shi L Q 2013 Acta Phys. Sin. 62 195202 (in Chinese) [张文钊, 唐兴华, 李嘉庆, 施立群 2013 62 195202]
[15] Loarte A, Becoulet M, Saibene1 G, Sartori1 R, Campbell D J, Eich T, Herrmann A, Laux M, Suttrop W, Alper B, Lomas P J, Matthews G, Jachmich S, Ongena J, Innocente P 2002 Plasma Phys. Control. Fusion 44 1815
[16] Sugiyama K, Krieger K, Lungn C P, Roth J 2009 J. Nucl. Mater. 390–391 659
[17] Shu W M, Luo G N, Yamanishi T 2007 J. Nucl. Mater. 367–370 1463
[18] Luo G N, Umstadter K, Shu W M, Wampler W, Lu G H 2009 Nucl. Instrum. Methods Phys. Res. Sect. B 267 3041
[19] Causey R, Wilson K, Venhaus T, Wampler W R 1999 J. Nucl. Mater. 266–269 467
[20] Zhang Y, Wang W, Ren H T, Han W J, Liu F S, Yu J G, Peng S X, Zhu K G 2013 Nucl. Instrum. Methods Phys. Res. Sect. B 307 357
[21] Anderl R A, Pawelko R J, Schuetz S T 2001 J. Nucl. Mater. 290–293 38
[22] Kurishita H, Matsuo S, Arakawa H, Sakamoto T, Kobayashi S, Nakai K, Takida T, Kato M, Kawai M, Yoshida N 2012 J. Nucl. Mater. 398 87
[23] Doerner R P, Baldwin M J, Nishijima D, Roth J, Schmid K 2011 J. Nucl. Mater. 415 717
[24] Baldwin M J, Doerner R P, Nishijima D, Tokunaga K, Ueda Y 2009 J. Nucl. Mater. 390–391 886
[25] Xiao D Q, Zhu J G, Zhu J L, Shen L 2011 Thin Film Physics and Devices (Beijing: National Defence Industry Press ) pp66-68 (in Chinese) [肖定全, 朱建国, 朱基亮, 申林2011薄膜物理与器件(北京: 国防工业出版社) 第66–68页]
[26] Wang P X, Song J S 2002 Permeation of Helium and Hydrogen in Materials (Beijing: National Defence Industry Press) p69 (in Chinese) [王佩璇, 宋家树2002材料中的氦及氚渗透(北京: 国防工业出版社)第69页]
[27] Wan F R 1993 Irradiation Damage of Metal Materials (Beijing: Science Press) pp87-92 (in Chinese) [万发荣1993金属材料的辐照损伤(北京: 科学出版社)第87–92页]
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