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多层介质膜光栅是高功率激光系统的关键光学元件. 为了满足国内强激光系统的迫切需求，首先利用考夫曼型离子束刻蚀机开展了HfO2顶层多层介质膜脉宽压缩光栅的离子束刻蚀实验研究. 采用纯Ar及Ar和CHF3混合气体作为工作气体进行离子束刻蚀实验，获得了优化的离子源工作参数. 结果表明，与纯Ar离子束刻蚀相比，Ar和CHF3混合气体离子束刻蚀时的HfO2/光刻胶的选择比大. HfO2的离子束刻蚀过程中再沉积效应明显，导致刻蚀光栅占宽比变大. 根据刻蚀速率分布制作的掩模遮挡板可以提高刻蚀速率均匀性，及时清洗离子源和更换灯丝，可保证刻蚀工艺的重复性. 利用上述技术已成功研制出多块最大尺寸为80 mm×150 mm、线密度1480线/mm、平均衍射效率大于95%的HfO2顶层多层介质膜脉宽压缩光栅. 实验结果与理论设计一致，为大口径多层介质膜脉宽压缩光栅的离子束刻蚀提供了有益参考.Multilayer dielectric grating (MDG) is one of the key optical elements of high-power laser systems. To meet the need of MDGs for high-power laser systems, experimental investigation on MDG with a top layer of HfO2 has been carried out using Kaufman-type ion beam etcher. The optimal ion source conditions have been obtained by etching of HfO2 in pure Ar and Ar/CHF3 mixture plasmas. Compared with pure Ar plasma etching, better selectivity was achieved with Ar/CHF3. The redeposition of sidewalls effects are quite obvious during etching, which results in the increase in duty cycle of etched grating. As there is a distribution of etch rate along the direction normal to the scan movement, a special-shaped mask was made to be used as a substrate holder, which increases uniformity of the etched profile. In order to process repeatability, the ion source should be cleaned up, the cathode and neutralizer filament should be changed after etching process to full completion. Based on the above techniques, a number of MDGs have been achieved, each of which has a mean diffraction efficiency greater than 95%, a line density 1480 lines/mm, and on aperture up to 80 mm×150 mm. Experimental results agree fairly well with the designed, which provides a good reference for the large aperture MDGs ion beam etching.
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Keywords:
- diffraction grating /
- multilyer dielectric film /
- ion beam etching
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[13] Wang C, Donnelly V M 2008 J. Vac. Sci. Technol. A 26 597
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[29] Chen G, Wu J H, Chen X R, Liu Q 2006 Chinese J. Lasers 23 800 (in Chinese) [陈刚, 吴建宏, 陈新荣, 刘全 2006 中国激光 23 800]
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[32] Wang X D, Xu X D, Liu Y, Hong Y L, Fu S J 2005 SPIE 5636 576
[33] Wang X D, Liu Y, Xu X D, Fu S J, Cui Z 2006 J. Vac. Sci. Technol. A 24 1067
[34] Zhou X W, Liu Y, Xu X D, Qiu K Q, Liu Z K, Hong Y L, Fu S J 2012 Acta Phys. Sin. 61 174203 (in Chinese) [周小为, 刘颖, 徐向东, 邱克强, 刘正坤, 洪义麟, 付绍军 2012 61 174203]
[35] Lin H, Li L F, Zeng L J 2005 Chines. Opt. Lett. 3 63
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[1] Xu X D, Hong Y L, Liu Y, Fu S J 2005 Physics 34 748 (in Chinese) [徐向东, 洪义麟, 刘颖, 付绍军 2005 物理 34 748]
[2] Yang Y C, Luo H, Wang X, Li F Q, Huang X J, Jing F 2012 Chin. Phys. B 21 014210
[3] Wei H B, Li L F 2003 Appl. Opt. 42 6255
[4] Sha L, Puthenkovilakam R, Lin Y S, Chang J P 2003 J. Vac. Sci. Technol. B 21 2420
[5] Sha L, Chang J P 2004 J. Vac. Sci. Technol. A 22 88
[6] Nakamura K, Kitagawa T, Osari K, Takahashi K, Ono K 2006 Vacuum 80 761
[7] Norasetthekul S, Park P Y, Baik K H, Lee K P, Shin J H, Jeong B S, Shishodia V, Norton D P, Pearton S J 2002 Appl. Surf. Sci. 187 75
[8] Chen J, Tan K M, Wu N, Yoo W J, Chan D S H 2003 J. Vac. Sci. Technol. A 21 1210
[9] Chen J, Yoo W J, Tan Z Y L, Wang Y, Chan D S H 2003 J. Vac. Sci. Technol. A 22 1552
[10] Takahashi K, Ono K, Setsuhara Y 2005 J. Vac. Sci. Technol. A 23 1691
[11] Takahashi K, Ono K 2006 J. Vac. Sci. Technol. A 24 437
[12] Sungauer E, Pargon E, Mellhaoui X, Ramos R, Cunge G, Vallier L, Joubert O, Lill T 2007 J. Vac. Sci. Technol. B 25 1640
[13] Wang C, Donnelly V M 2008 J. Vac. Sci. Technol. A 26 597
[14] Shoeb J, Kushner M J 2009 J. Vac. Sci. Technol. A 27 1289
[15] Park J C, Hwang S, Kim J M, Kim J K, Seo J H, Choi D K, Lee H, Cho H S 2010 Electron. Mater. Lett. 6 107
[16] Benedicto M, Galiana B, Aldareguia J M M, Monaghan S, Hurley P K, Cherkaoui K, Vazquez L, Tejedor P 2011 Nanoscale Research Lett. 6 400
[17] Mutsukura N, Kobayashi K, Machi Y 1990 J. Appl. Phys. 68 2657
[18] Barton I M, Perry M D 2007 U.S. Patent 7 256 938
[19] Xin Y, Ning ZY, Ye C, Xu S H, Gan Z Q, Huang S, Chen J, Di X L 2004 Vac. Sci. Technol. 24 309 (in Chinese) [辛煜, 宁兆元, 叶超, 许圣华, 甘肇强, 黄松, 陈军, 狄小莲 2004 真空科学与技术学报 24 309]
[20] Perry M D, Boyd R D, Britten J A, Decker D, Shore B W, Shannon C, Shults E, Li L F 1995 Opt. Lett. 20 940
[21] Britten J A, Nguyen H T, Falabella S F, Shore B W, Perry M D 1996 J. Vac. Sci. Technol. 14 2973
[22] Kong W J, Shao J D, Zhang W L, Fang M, Fan R Y, Fan Z X 2005 Acta Opt.Sin. 25 701 (in Chinese) [孔伟金, 邵建达, 张伟丽, 方明, 范瑞瑛, 范正修 2005 光学学报 25 701]
[23] Kong W J, Shen J, Shen Z C, Shao J D, Fan Z X 2006 Acta Photo Sin. 35 84 (in Chinese) [孔伟金, 沈健, 沈自才, 邵建达, 范正修 2006 光子学报 35 84]
[24] Kong W J, Liu S J, Shen J,Shen Z C, Shao J D, Fan Z X 2006 Acta Phys. Sin. 55 1143 (in Chinese) [孔伟金, 刘世杰, 沈健, 沈自才, 邵建达, 范正修 2006 55 1143]
[25] Kong W J, Yun M J,Liu S J, Jin Y X, Fan Z X, Shao J D 2008 Chin. Phys. Lett. 25 1684
[26] Zhang W F, Kong W J, Yun M J, Lu J H, Sun X 2012 Chin. Phys. B 21 094218
[27] Kong W J, Wang S H, Wei S J, Yun M J, Zhang W F, Wang X J, Zhang M M 2011 Acta Phys. Sin. 60 114214 (in Chinese) [孔伟金, 王书浩, 魏世杰, 云茂金, 张文飞, 王心洁, 张蒙蒙 2011 60 114214]
[28] Dai Y P, Liu S J, He H B, Shao J D, Yi K, Fan Z X 2007 SPIE 6403 64031B
[29] Chen G, Wu J H, Chen X R, Liu Q 2006 Chinese J. Lasers 23 800 (in Chinese) [陈刚, 吴建宏, 陈新荣, 刘全 2006 中国激光 23 800]
[30] Wang X D, Liu Y, Hong Y L, Fu S J, Xu X D 2004 Vac. Sci. Technol. 24 313 (in Chinese) [王旭迪, 刘颖, 洪义麟, 付绍军, 徐向东 2004 真空科学与技术学报 24 313]
[31] Wang X D, Xu X D, Liu Y, Hong Y L, Fu S J 2004 Opt. Precision. Eng. 12 454 (in Chinese) [王旭迪, 徐向东, 刘颖, 洪义麟, 付绍军 2004 光学精密工程 12 454]
[32] Wang X D, Xu X D, Liu Y, Hong Y L, Fu S J 2005 SPIE 5636 576
[33] Wang X D, Liu Y, Xu X D, Fu S J, Cui Z 2006 J. Vac. Sci. Technol. A 24 1067
[34] Zhou X W, Liu Y, Xu X D, Qiu K Q, Liu Z K, Hong Y L, Fu S J 2012 Acta Phys. Sin. 61 174203 (in Chinese) [周小为, 刘颖, 徐向东, 邱克强, 刘正坤, 洪义麟, 付绍军 2012 61 174203]
[35] Lin H, Li L F, Zeng L J 2005 Chines. Opt. Lett. 3 63
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