氦、氘对纯铁辐照缺陷的影响

姜少宁; 万发荣; 龙毅; 刘传歆; 詹倩; 大貫惣明

doi:10.7498/aps.62.166801

摘要

在核聚变堆的辐照环境中, 核嬗变产物氢、氦对结构材料的抗辐照性能将产生很大的影响. 本实验采用离子注入和电子辐照模拟研究了氦和氘对具有体心立方结构的纯铁的影响. 采用离子加速器在室温分别对纯铁注入氦离子和氘离子, 经500℃时效1 h后在高压电镜下进行电子辐照.结果表明: 室温注氦和室温注氘的纯铁在500℃时效后分别形成间隙型位错环和空位型位错环. 在电子辐照下, 间隙型位错环吸收间隙原子而不断长大, 而空位型位错环吸收间隙原子不断缩小. 通过计算位错环的变化速率发现, 空位型位错环比间隙型位错环吸收了更多的间隙原子, 即室温注氘纯铁的位错偏压比室温注氦纯铁的偏压参量大, 这意味着相同实验条件下空位型位错环对辐照肿胀的贡献大于间隙型位错环对辐照肿胀的贡献. 利用氦-空位复合体和氘-空位复合体的结构, 分析了注氦和注氘后在纯铁中形成不同类型位错环的原因.

关键词:

氦 /
氘 /
辐照损伤 /
位错环

Abstract

Productions of transmute elements (hydrogen and helium) have great influences on the resistance to irradiation damage in structural materials for fusion reactor. The evolution of irradiation damage in bcc iron is investigated with ion implantation and electron irradiation. Pure iron implanted by He+ or D+ ions at room temperature are aged at 500℃ for 1 h, then irradiated by electrons under high voltage electron microscope. The results show that interstitial loops (i-loop) and vacancy loops (v-loop) are formed in He+-implanted iron and D+-implanted iron respectively. Under electron irradiation, due to the absorption of interstitials atom, i-loop grows up while v-loop shrinks. According to the rate of variation of dislocation loop, v-loop absorbs more interstitial atoms, i.e., the dislocation bias of D+-implanted iron is larger than that of He+-implanted iron, which means that the v-loop has the more contributions to irradiation swelling than i-loop. The causes of the different natures of dislocation loops formed in D+-implanted iron and He+-implanted iron are analyzed by the structures of He-V and D-V complexes.

Keywords:

作者及机构信息

1.
北京科技大学材料科学与工程学院, 北京 100083;

2.
北海道大学工学研究院, 札幌 060-8628, 日本

基金项目: 国家重点基础研究发展计划(批准号: 2011GB108002);国家自然科学基金(批准号: 50971030, 11275023, 51071021) 和日本学术振兴会Asia-Core计划资助的课题.

Authors and contacts

1.
School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;

2.
Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan

Funds: Project supported by the National Basic Research Program of China (Grant No. 2011GB108002), the National Natural Science Foundation of China (Grant Nos. 50971030, 11275023, 51071021), and the Asia Core University Program of Japan Society for the Promotion of Science.

参考文献

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施引文献

[1]	Klueh R L, Nelson A T 2007 J. Nucl. Mater. 371 37
[2]	Hunn J D, Lee E H, Byun T S, Mansur L K 2000 J. Nucl. Mater. 282 131
[3]	Wolfeden A 1976 Micron 7 55
[4]	Osetsky Y N, Bacon D J, Serra A, Singh B N, Golubov S I 2000 J. Nucl. Mater. 276 65
[5]	Gao Y Z, Sun G R, Zhang T H, Ji C Z, Yang J H 1990 Chin. Phys. Lett. 8 82
[6]	Zinkle S J 2004 APS Division of Plasma Physics 46th Annual Meeting Savannah, GA, November 15-19, 2004
[7]	Arakawa K, Mori H, Ono K 2002 J. Nucl. Mater. 307-311 272
[8]	Huang Y N, Wan F R, Jiao Z J 2011 Acta Phys. Sin. 60 036802 (in Chinese) [黄依娜, 万发荣, 焦志杰 2011 60 036802]
[9]	Deo C S, Okuniewski M A, Srivilliputhur S G, Maloy S A, Baskes M I, Michael R J, Stubbins J F 2007 J. Nucl. Mater. 361 141
[10]	Stewart D M, Osetsky Y N, Stoller R E, Golubov S I, Seletskai T, Kamenski P J 2010 Philos. Mag. 90 935
[11]	Zheng H 2007 Acta. Phys. Sin. 56 389 (in Chinese) [郑晖 2007 56 389]
[12]	Chen J, Jung P, Hoffelner W, Ullmaier H 2008 Acta. Mater. 56 250
[13]	Alonso E, Caturla M J, Díaz de la Rubia T 2000 J. Nucl. Mater. 276 221
[14]	Gary S W 2007 Fundamentas of Radiation Materials Science (Newyork: Springer) p144
[15]	Gilbert M R, Yao Z, Kirk M A, Jenkins M L, Dudarev S L 2009 J. Nucl. Mater. 386-388 36
[16]	Trinkaus H, Singh B 2003 J. Nucl. Mater. 323 229
[17]	Jiao Z J 1998 M. S. Dissertation (Beijing: University of Science and Technology Beijing) (in Chinese) [焦志杰 1998 硕士学位论文(北京: 北京科技大学)]
[18]	Wolfenden A 1998 Micron 9 211
[19]	Wan F R, Zhu X F, Xiao J M, Yuan Y 1990 Acta Phys. Sin. 39 1093 (in Chinese) [万发荣, 朱晓峰, 肖纪美, 袁逸 1990 39 1093]
[20]	Myers S M, Richards P M, Wampler W R 1985 J. Nucl. Mater. 165 9
[21]	Yao B, Edwards D J, Kurtz R J, Odette G R, Yamamoto T 2011 Fusion Reactor Materials Program Oak Ridge, US, December 31, 2011 pp85-89

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