Ion beam etching for multilayer dielectric pulse compressor gratings with top layers of HfO2

Xu Xiang-Dong; Liu Ying; Qiu Ke-Qiang; Liu Zheng-Kun; Hong Yi-Lin; Fu Shao-Jun

doi:10.7498/aps.62.234202

Abstract

Multilayer dielectric grating (MDG) is one of the key optical elements of high-power laser systems. To meet the need of MDGs for high-power laser systems, experimental investigation on MDG with a top layer of HfO2 has been carried out using Kaufman-type ion beam etcher. The optimal ion source conditions have been obtained by etching of HfO2 in pure Ar and Ar/CHF3 mixture plasmas. Compared with pure Ar plasma etching, better selectivity was achieved with Ar/CHF3. The redeposition of sidewalls effects are quite obvious during etching, which results in the increase in duty cycle of etched grating. As there is a distribution of etch rate along the direction normal to the scan movement, a special-shaped mask was made to be used as a substrate holder, which increases uniformity of the etched profile. In order to process repeatability, the ion source should be cleaned up, the cathode and neutralizer filament should be changed after etching process to full completion. Based on the above techniques, a number of MDGs have been achieved, each of which has a mean diffraction efficiency greater than 95%, a line density 1480 lines/mm, and on aperture up to 80 mm×150 mm. Experimental results agree fairly well with the designed, which provides a good reference for the large aperture MDGs ion beam etching.

Keywords:

Authors and contacts

1.
National Synchrotron Radiation Laboratory, University of science and technology of China, Hefei 230029, China
Funds: Project supported by the National High Technology Research and Development Program of China.

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Cited By

[1]	Xu X D, Hong Y L, Liu Y, Fu S J 2005 Physics 34 748 (in Chinese) [徐向东, 洪义麟, 刘颖, 付绍军 2005 物理 34 748]
[2]	Yang Y C, Luo H, Wang X, Li F Q, Huang X J, Jing F 2012 Chin. Phys. B 21 014210
[3]	Wei H B, Li L F 2003 Appl. Opt. 42 6255
[4]	Sha L, Puthenkovilakam R, Lin Y S, Chang J P 2003 J. Vac. Sci. Technol. B 21 2420
[5]	Sha L, Chang J P 2004 J. Vac. Sci. Technol. A 22 88
[6]	Nakamura K, Kitagawa T, Osari K, Takahashi K, Ono K 2006 Vacuum 80 761
[7]	Norasetthekul S, Park P Y, Baik K H, Lee K P, Shin J H, Jeong B S, Shishodia V, Norton D P, Pearton S J 2002 Appl. Surf. Sci. 187 75
[8]	Chen J, Tan K M, Wu N, Yoo W J, Chan D S H 2003 J. Vac. Sci. Technol. A 21 1210
[9]	Chen J, Yoo W J, Tan Z Y L, Wang Y, Chan D S H 2003 J. Vac. Sci. Technol. A 22 1552
[10]	Takahashi K, Ono K, Setsuhara Y 2005 J. Vac. Sci. Technol. A 23 1691
[11]	Takahashi K, Ono K 2006 J. Vac. Sci. Technol. A 24 437
[12]	Sungauer E, Pargon E, Mellhaoui X, Ramos R, Cunge G, Vallier L, Joubert O, Lill T 2007 J. Vac. Sci. Technol. B 25 1640
[13]	Wang C, Donnelly V M 2008 J. Vac. Sci. Technol. A 26 597
[14]	Shoeb J, Kushner M J 2009 J. Vac. Sci. Technol. A 27 1289
[15]	Park J C, Hwang S, Kim J M, Kim J K, Seo J H, Choi D K, Lee H, Cho H S 2010 Electron. Mater. Lett. 6 107
[16]	Benedicto M, Galiana B, Aldareguia J M M, Monaghan S, Hurley P K, Cherkaoui K, Vazquez L, Tejedor P 2011 Nanoscale Research Lett. 6 400
[17]	Mutsukura N, Kobayashi K, Machi Y 1990 J. Appl. Phys. 68 2657
[18]	Barton I M, Perry M D 2007 U.S. Patent 7 256 938
[19]	Xin Y, Ning ZY, Ye C, Xu S H, Gan Z Q, Huang S, Chen J, Di X L 2004 Vac. Sci. Technol. 24 309 (in Chinese) [辛煜, 宁兆元, 叶超, 许圣华, 甘肇强, 黄松, 陈军, 狄小莲 2004 真空科学与技术学报 24 309]
[20]	Perry M D, Boyd R D, Britten J A, Decker D, Shore B W, Shannon C, Shults E, Li L F 1995 Opt. Lett. 20 940
[21]	Britten J A, Nguyen H T, Falabella S F, Shore B W, Perry M D 1996 J. Vac. Sci. Technol. 14 2973
[22]	Kong W J, Shao J D, Zhang W L, Fang M, Fan R Y, Fan Z X 2005 Acta Opt.Sin. 25 701 (in Chinese) [孔伟金, 邵建达, 张伟丽, 方明, 范瑞瑛, 范正修 2005 光学学报 25 701]
[23]	Kong W J, Shen J, Shen Z C, Shao J D, Fan Z X 2006 Acta Photo Sin. 35 84 (in Chinese) [孔伟金, 沈健, 沈自才, 邵建达, 范正修 2006 光子学报 35 84]
[24]	Kong W J, Liu S J, Shen J,Shen Z C, Shao J D, Fan Z X 2006 Acta Phys. Sin. 55 1143 (in Chinese) [孔伟金, 刘世杰, 沈健, 沈自才, 邵建达, 范正修 2006 55 1143]
[25]	Kong W J, Yun M J,Liu S J, Jin Y X, Fan Z X, Shao J D 2008 Chin. Phys. Lett. 25 1684
[26]	Zhang W F, Kong W J, Yun M J, Lu J H, Sun X 2012 Chin. Phys. B 21 094218
[27]	Kong W J, Wang S H, Wei S J, Yun M J, Zhang W F, Wang X J, Zhang M M 2011 Acta Phys. Sin. 60 114214 (in Chinese) [孔伟金, 王书浩, 魏世杰, 云茂金, 张文飞, 王心洁, 张蒙蒙 2011 60 114214]
[28]	Dai Y P, Liu S J, He H B, Shao J D, Yi K, Fan Z X 2007 SPIE 6403 64031B
[29]	Chen G, Wu J H, Chen X R, Liu Q 2006 Chinese J. Lasers 23 800 (in Chinese) [陈刚, 吴建宏, 陈新荣, 刘全 2006 中国激光 23 800]
[30]	Wang X D, Liu Y, Hong Y L, Fu S J, Xu X D 2004 Vac. Sci. Technol. 24 313 (in Chinese) [王旭迪, 刘颖, 洪义麟, 付绍军, 徐向东 2004 真空科学与技术学报 24 313]
[31]	Wang X D, Xu X D, Liu Y, Hong Y L, Fu S J 2004 Opt. Precision. Eng. 12 454 (in Chinese) [王旭迪, 徐向东, 刘颖, 洪义麟, 付绍军 2004 光学精密工程 12 454]
[32]	Wang X D, Xu X D, Liu Y, Hong Y L, Fu S J 2005 SPIE 5636 576
[33]	Wang X D, Liu Y, Xu X D, Fu S J, Cui Z 2006 J. Vac. Sci. Technol. A 24 1067
[34]	Zhou X W, Liu Y, Xu X D, Qiu K Q, Liu Z K, Hong Y L, Fu S J 2012 Acta Phys. Sin. 61 174203 (in Chinese) [周小为, 刘颖, 徐向东, 邱克强, 刘正坤, 洪义麟, 付绍军 2012 61 174203]
[35]	Lin H, Li L F, Zeng L J 2005 Chines. Opt. Lett. 3 63

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Vol. 62, Issue 23 - 2013-12-05

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