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In order to study the thermal and stress fields in the multilayered structure of silicon-based positive-intrinsic-negative(PIN) photodiode irradiated by millisecond(ms)-pulsed laser, we use the thermal elasto-plastic constitutive theory and the equivalent specific heat method, to deal with the phase change latent heat. The multiple-heat-source, especially the influence of reflection from bottom-aluminum-electrode, and the effect of the nonlinearity of material parameters are taken into consideration. A 2-D simulation model is built by means of the finite element simulation software of COMSOL Multiphysics. The surface and the internal each layer showing changes of the transient distribution and evolution of the thermal and stress fields with space and time can be obtained. Because of taking account of the reflection of the aluminum electrode, the temperature of the aluminum electrode rises slightly. On this basis, we analyze the hard failure mechanism of ms-pulsed laser irradiated silicon-based PIN, and the mechanical damage before melting that leads to a malfunction of silicon-based PIN detector.
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Keywords:
- millisecond pulse laser /
- thermal stress /
- phase change latent heat /
- multilayered structure
[1] Watkins S E, Zhang C Z, Walser R M, Becker M F 1990 Appl. Opt. 29 827
[2] Moeglin J P, Gautier B, Joeckle R, Bolmont D 1998 SPIE. 3287 60
[3] Arora V K, Dawar A L 1996 Appl. Opt. 35 7061
[4] Li F M, Nixon O, Nathan A 2004 IEEE Trans. Electron Devices 51 2229
[5] Engelhart P, Hermann S, Neubert T, Plagwitz H, Grischke R, Meyer R, Klug U, Schoonderbeek A, Stute U, Brendel R 2007 Prog. Photovoltaics 15 521
[6] Hermann S, Harder N, Brendel R, Herzog D, Haferkamp H 2010 Appl. Phys. A 99 151
[7] Zhao R, Liang Z C, Han B, Zhang H C, Xu R Q, Lu J, Ni X W 2009 Chin. Phys. B 18 1877
[8] Cheng T, Li Y J, Meng L M, Li X B 2011 Chin. Phys. B 20 024206
[9] Li B W, Ishiguro S, Skoric M M 2006 Chin. Phys. 15 2046
[10] Li Z W, Wang X, Shen Z H, Lu J 2012 Applied Optics 51 2759
[11] Ouyang X P, Li Z F, Zhang G G, Huo Y K, Zhang Q M, Zhang X P, Song X C, Jia H Y, Lei J H, Sun Y C 2002 Acta Phys. Sin. 51 1502(in Chinese) [欧阳晓平, 李真富, 张国光, 霍裕昆, 张前美, 张显鹏, 宋献才, 贾焕义, 雷建华, 孙远程 2002 51 1502]
[12] Liu Q X, Zhong M 2010 Acta Phys. Sin. 59 8535(in Chinese) [刘全喜, 钟鸣 2010 59 8535]
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[1] Watkins S E, Zhang C Z, Walser R M, Becker M F 1990 Appl. Opt. 29 827
[2] Moeglin J P, Gautier B, Joeckle R, Bolmont D 1998 SPIE. 3287 60
[3] Arora V K, Dawar A L 1996 Appl. Opt. 35 7061
[4] Li F M, Nixon O, Nathan A 2004 IEEE Trans. Electron Devices 51 2229
[5] Engelhart P, Hermann S, Neubert T, Plagwitz H, Grischke R, Meyer R, Klug U, Schoonderbeek A, Stute U, Brendel R 2007 Prog. Photovoltaics 15 521
[6] Hermann S, Harder N, Brendel R, Herzog D, Haferkamp H 2010 Appl. Phys. A 99 151
[7] Zhao R, Liang Z C, Han B, Zhang H C, Xu R Q, Lu J, Ni X W 2009 Chin. Phys. B 18 1877
[8] Cheng T, Li Y J, Meng L M, Li X B 2011 Chin. Phys. B 20 024206
[9] Li B W, Ishiguro S, Skoric M M 2006 Chin. Phys. 15 2046
[10] Li Z W, Wang X, Shen Z H, Lu J 2012 Applied Optics 51 2759
[11] Ouyang X P, Li Z F, Zhang G G, Huo Y K, Zhang Q M, Zhang X P, Song X C, Jia H Y, Lei J H, Sun Y C 2002 Acta Phys. Sin. 51 1502(in Chinese) [欧阳晓平, 李真富, 张国光, 霍裕昆, 张前美, 张显鹏, 宋献才, 贾焕义, 雷建华, 孙远程 2002 51 1502]
[12] Liu Q X, Zhong M 2010 Acta Phys. Sin. 59 8535(in Chinese) [刘全喜, 钟鸣 2010 59 8535]
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