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利用Nd:YAG纳秒激光(波长为1064 nm)在不同气氛(空气、N2,真空)中对单晶硅进行累积脉冲辐照,研究了表面微结构的演化情况.在激光辐照的初始阶段,与532和355 nm纳秒脉冲激光在硅表面诱导出波纹结构不同,1064 nm脉冲激光诱导出了微孔结构和折断线结构,并且硅的晶面取向不同,相应的折断线结构也不同.对于Si(111)面,两条折线交角为120°或60°,形成网状;而对于Si(100)面,两条折断线正交,从而将表面分成了15—20 μm的矩形块.结果表明,微孔结构的生长过程主要与相爆炸有关,而折断线的形成主要是热应力作用的结果.不同气氛对微结构形成的影响表明,刻蚀率和生长率与微结构的形成有密切的关系.We investigated the evolution of surface microstructures created on single crystal silicon wafers by the cumulative Nd ∶YAG nanosecond laser pulses (wavelength 1064 nm ) in different atmospheres (N2, air and vacuum). Micropore structure and the fracture lines are formed after irradiation of a few laser pulses,compared with ripple structures created by laser pulses of wavelengths of 532 and 355 nm. The fracture line structure is different for (111) and (100) silicon. The fracture lines have 60°and 120° intersections for (111) silicon. For (100)-oriented silicon wafers, two sets of fracture lines intersect at 90° to form a grid that divides the surface into rectangular blocks with side length of from 15 to 20 μm. We think that phase explosions are responsible for the growth of micropore structure. The fracture lines are mainly due to thermal stress. Finally, We studied the formation of microstructures under different atmospheres, and the results show that it is closely related to the etching and growth rate.
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Keywords:
- nanosecond laser /
- microstructure of silicon /
- phase explosion /
- thermal stress
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[19] Halbwax M, Sarnet T, Delaporte P H, Sentis M, Etienne H, Torregrosa F, Vervisch V, Perichaud I, Martinuzzi S 2008 Thin Solid Films 516 6791
[20] Xiong P X, Jia X, Jia T Q, Deng L, Feng D H, Sun Z R, Xu Z Z 2010 Acta Phys. Sin. 59 311(in Chinese)[熊平新、贾 鑫、贾天卿、邓 莉、冯东海、孙真荣、徐至展 2010 59 311]
[21] Yuan C H, Li X H, Tang D C, Yang H D 2010 High Power Laser and Particle Beams 22 2(in Chinese)[袁春华、李晓红、唐多昌、杨宏道 2010 强激光与粒子束 22 2]
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[23] Yuan C H, Li X H, Tang D C, Yang H D, Li G Q 2010 Acta Phys. Sin. 59 7015(in Chinese) [袁春华、李晓红、唐多昌、杨宏道、李国强 2010 59 7015]
[24] Dabby F W, Peak U C 1972 IEEE Journal of Quantum Electronics QE-8 106
[25] Shen M Y, Crouch C H, Carey J E, Younkin R, Mazur E, Sheehy M, Friend C M 2003 Appl. Phys. Lett. 82 1715
[26] Gagliano F P, Paek U C 1974 Appl. Opt. 13 274
[27] Valentin C, Doina C 1999 Appl. Surf. Sci. 138 218
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[1] Chen B, Yu B K, Yan X N, Qiu J R, Jiang X W, Zhu C S 2004 Chin. Phys. 13 968
[2] Li C B, Jia T Q, Sun H Y, Li X X, Xu S Z, Feng D H, Wang X F, Ge X C, Xu Z Z 2006 Acta Phys. Sin. 55 217 (in Chinese) [李成斌、贾天卿、孙海轶、李晓溪、徐世珍、冯东海、王晓峰、葛晓春、徐至展 2006 55 217]
[3] Bimbaum M, Stocker T L 1966 J. Appl. Phys. 17 461
[4] Huang W Q, Xu L, Wang H X, Jin F, Wu K Y, Liu S R, Qin C J, Qin S J 2008 Chin. Phys. B 17 1817
[5] Zhao X H, Gao Y, Xu M J, Duan W T, Yu H W 2008 Acta Phys. Sin.57 5027(in Chinese)[赵兴海、高 杨、徐美健、段文涛、於海武 2008 57 5027 ]
[6] Young J F, Preston J S, van Driel H M, Sipe J E 1983 Phys. Rev. B 27 1141
[7] Faucets P M, Siegman A E 1982 Appl. Phys. Lett. 40 824
[8] Rudolph P, Kautek W 2004 Thin Solid Films 453 537
[9] Bolle M, Lazare S 1993 Appl. Surf. Sci. 69 31
[10] Lowndes D H, Fowlkes J D, Pedraza A J 2000 Appl. Surf. Sci. 154 647
[11] Wang R, Yang J J, Liang C Y, Wang H S, Han W, Yang Y 2009 Acta Phys. Sin.58 5429(in Chinese) [王 锐、杨建军、梁春永、王洪水、韩 伟、杨 阳 2009 58 5429]
[12] Yang Y, Wang C, Yang R D, Li L, Xiong F, Bao J M 2009 Chin. Phys. B 18 4906
[13] Hu H F, Wang X L, Li Z L, Zhang N, Cui H C 2009 Acta Phys. Sin.58 7662 [胡浩丰、王晓雷、李智磊、张 楠、翟宏琛 2009 58 7662]
[14] Yang L, Wang Q Y 2009 Chin. Phys. B 18 4292
[15] Ran L L, Qu S L, Guo Z Y 2010 Chin. Phys. B 19 034204
[16] Younkin R, Carey J E, Mazur E, Levinson J A, Friend C M 2003 J. Appl. Phys. 93 2626
[17] Crouch C H, Carey J E, Shen M, Mazur E, Genin F Y 2004 Appl. Phys. A 79 1635
[18] Huang Z H, Carey J E, Liu M G, Guo X Y, Mazur E, Campbellet J C 2006 Appl. Phys. Lett. 89 033506
[19] Halbwax M, Sarnet T, Delaporte P H, Sentis M, Etienne H, Torregrosa F, Vervisch V, Perichaud I, Martinuzzi S 2008 Thin Solid Films 516 6791
[20] Xiong P X, Jia X, Jia T Q, Deng L, Feng D H, Sun Z R, Xu Z Z 2010 Acta Phys. Sin. 59 311(in Chinese)[熊平新、贾 鑫、贾天卿、邓 莉、冯东海、孙真荣、徐至展 2010 59 311]
[21] Yuan C H, Li X H, Tang D C, Yang H D 2010 High Power Laser and Particle Beams 22 2(in Chinese)[袁春华、李晓红、唐多昌、杨宏道 2010 强激光与粒子束 22 2]
[22] Sun C W 2002 Effect of Laser Irradiating ( Beijing:National Defense Industry Press) pp202-204(in Chinese)[孙承纬 2002 激光辐照效应(北京:国防工业出版社)第202—204页]
[23] Yuan C H, Li X H, Tang D C, Yang H D, Li G Q 2010 Acta Phys. Sin. 59 7015(in Chinese) [袁春华、李晓红、唐多昌、杨宏道、李国强 2010 59 7015]
[24] Dabby F W, Peak U C 1972 IEEE Journal of Quantum Electronics QE-8 106
[25] Shen M Y, Crouch C H, Carey J E, Younkin R, Mazur E, Sheehy M, Friend C M 2003 Appl. Phys. Lett. 82 1715
[26] Gagliano F P, Paek U C 1974 Appl. Opt. 13 274
[27] Valentin C, Doina C 1999 Appl. Surf. Sci. 138 218
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