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High-quality ZnO and Cd-doped ZnO nanorods with different Cd-doping concentrations are synthesized by using the hydrothermal method. Microstructures and photoluminescence of the samples are systematically investigated by SEM, X-ray diffraction (XRD), Raman scattering spectrum and photoluminescence (PL) spectrum. Results of XRD analysis indicate that ZnO and ZnO:Cd crystallites exhibit a hexagonal wurtzite structure. SEM shows that the nanorods become smaller due to Cd doping. There is an internal tension which induces the decrease of optical band gap in Cd-doped nanorods. Cd-doping increases the intensity of violet emission peak near 2.90 eV and the blue emission peak located at 2.67 eV appears when the doping concentration is up to 2%. This study can be used for developing blue-violet-emitting devices.
[1] Xia Y Y, Brault J, Damilano B, Chenot S, Vennegue's P, Nemoz M, Teisseire M, Leroux M, Obrecht R, Robin I C, Santailler J L, Feuillet G, Chauvea J M 2013 Appl. Phys. Express 6 0421011
[2] Cheng P F, Li S T, Wang H 2013 Chin. Phys. B 22 107701
[3] [4] [5] Gao H X, Hu R, Yang Y T 2012 Chin. Phys. Lett. 29 017305
[6] [7] Nie M Zhao Y Zeng YJiang Y J 2013 Acta Phys. Sin. 62 176801 (in Chinese) [聂朦, 赵艳, 曾勇, 蒋毅坚 2013 62 176801]
[8] [9] Lv B, Zhou X, Linghu R F, Wang X L, Yang X D 2011 Chin. Phys. B 20 036104
[10] Yang C, Wang X P, Wang L J, Pang X F, Li S K, Jing L W 2013 Chin. Phys. B 22 088101
[11] [12] [13] Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501
[14] [15] Hosseinmardi A, Shojaee N, Keyanpour R M, Ebadzadeh T 2012 Cera. Inter. 38 1975
[16] [17] Zhong J B, Li J Z, He X Y, Zeng J, Lu Y, Hu W, Lin K 2012 Curr. Appl. Phys. 12 998
[18] Lee W, Shin S, Jung D R, Kim J, Nahm C, Moon T, Park B 2012 Curr. Appl. Phys. 12 628
[19] [20] [21] Li H, Liu E T, Chan F Y F, Lu Z, Chen R 2011 Mater. Lett. 65 3440
[22] Wang C Z, Chen Z, He Y, Li L Y, Zhang D 2009 Appl. Surf. Sci 255 6881
[23] [24] Chen R Q, Zou C W, Bian J M, Sandhu A, Gao W 2011 Nanotech. 22 1057061
[25] [26] Yakuphanoglu F, Ilican S, Caglar M, Caglar Y 2010 Super. Micro. 47 732
[27] [28] [29] Zhang J, Zhao S Q, Zhang K, Zhou J Q, Cai Y F 2012 Nanscale Res. Lett. 7 405
[30] [31] Vijayalakshmi S, Venkataraj S, Jayavel R 2008 J. Phys. D: Appl. Phys. 41 245403
[32] Tang X, Lv H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta. Phys. Sin 57 1066 (in Chinese) [唐鑫, 吕海峰, 马春雨, 赵纪军, 张庆瑜 2008 57 1066]
[33] [34] [35] Huang Y Q, Liu M D, Li Z, Zeng Y K, Liu S B 2003 Mater. Sci. Eng. B 97 111
[36] Zang H, Wang Z G, Pang L L, Wei K F, Yao C F, Shen T L, Sun J R, Ma Y Z, Gou J, Sheng Y B, Zhu Y B 2010 Acta. Phys. Sin. 59 4831 (in Chinese) [臧航, 王志光, 庞立龙, 魏孔芳, 姚存峰, 申铁龙, 孙建荣, 马艺准, 缑洁, 盛彦斌, 朱亚滨 2010 59 4831]
[37] [38] Deng Q, Ma Y, Yang X H, Ye L J, Zhang X Z, Zhang Q, Fu H W 2012 Acta. Phys. Sin. 61 247701 (in Chinese) [邓泉, 马勇, 杨晓红, 叶利娟, 张学忠, 张起, 付宏伟 2012 61 247701]
[39] [40] Zhang F H, Zhang Z Y, Zhang W H, Xue S Q, Yun J N, Yan J F 2008 IEEE 2 681
[41] [42] [43] Jaffe J E, Snyder J A, Lin Z J, Hess A C 2000 Phys. Rev. B 62 1660
[44] Bacaksiz E, Altunbas M, zc-elik S O, Oltulu O, Tomakin M, Yılmaz S 2009 Mater. Sci. Semicond. Process. 12 118
[45] [46] Bai L N, Zheng B J, Lian J S, Jiang Q 2012 Solid. State. Sci. 14 698
[47] [48] Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943
[49] [50] [51] Vanheusden K, Seager C H, Warren W L, Tallant D R 1996 Appl. Phys. Lett. 68 403
[52] Yang P D, Yan H Q, Mao S, Russo R, Johnson J, Saykally R, Morris N, Pham J, He R R, Choi H J 2002 Adv. Funct. Mater 12 323
[53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] [90] [91] [92] [93] [94] [95] [96] [97] [98] [99] [100] [101] [102] [103] [104] [105] -
[1] Xia Y Y, Brault J, Damilano B, Chenot S, Vennegue's P, Nemoz M, Teisseire M, Leroux M, Obrecht R, Robin I C, Santailler J L, Feuillet G, Chauvea J M 2013 Appl. Phys. Express 6 0421011
[2] Cheng P F, Li S T, Wang H 2013 Chin. Phys. B 22 107701
[3] [4] [5] Gao H X, Hu R, Yang Y T 2012 Chin. Phys. Lett. 29 017305
[6] [7] Nie M Zhao Y Zeng YJiang Y J 2013 Acta Phys. Sin. 62 176801 (in Chinese) [聂朦, 赵艳, 曾勇, 蒋毅坚 2013 62 176801]
[8] [9] Lv B, Zhou X, Linghu R F, Wang X L, Yang X D 2011 Chin. Phys. B 20 036104
[10] Yang C, Wang X P, Wang L J, Pang X F, Li S K, Jing L W 2013 Chin. Phys. B 22 088101
[11] [12] [13] Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501
[14] [15] Hosseinmardi A, Shojaee N, Keyanpour R M, Ebadzadeh T 2012 Cera. Inter. 38 1975
[16] [17] Zhong J B, Li J Z, He X Y, Zeng J, Lu Y, Hu W, Lin K 2012 Curr. Appl. Phys. 12 998
[18] Lee W, Shin S, Jung D R, Kim J, Nahm C, Moon T, Park B 2012 Curr. Appl. Phys. 12 628
[19] [20] [21] Li H, Liu E T, Chan F Y F, Lu Z, Chen R 2011 Mater. Lett. 65 3440
[22] Wang C Z, Chen Z, He Y, Li L Y, Zhang D 2009 Appl. Surf. Sci 255 6881
[23] [24] Chen R Q, Zou C W, Bian J M, Sandhu A, Gao W 2011 Nanotech. 22 1057061
[25] [26] Yakuphanoglu F, Ilican S, Caglar M, Caglar Y 2010 Super. Micro. 47 732
[27] [28] [29] Zhang J, Zhao S Q, Zhang K, Zhou J Q, Cai Y F 2012 Nanscale Res. Lett. 7 405
[30] [31] Vijayalakshmi S, Venkataraj S, Jayavel R 2008 J. Phys. D: Appl. Phys. 41 245403
[32] Tang X, Lv H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta. Phys. Sin 57 1066 (in Chinese) [唐鑫, 吕海峰, 马春雨, 赵纪军, 张庆瑜 2008 57 1066]
[33] [34] [35] Huang Y Q, Liu M D, Li Z, Zeng Y K, Liu S B 2003 Mater. Sci. Eng. B 97 111
[36] Zang H, Wang Z G, Pang L L, Wei K F, Yao C F, Shen T L, Sun J R, Ma Y Z, Gou J, Sheng Y B, Zhu Y B 2010 Acta. Phys. Sin. 59 4831 (in Chinese) [臧航, 王志光, 庞立龙, 魏孔芳, 姚存峰, 申铁龙, 孙建荣, 马艺准, 缑洁, 盛彦斌, 朱亚滨 2010 59 4831]
[37] [38] Deng Q, Ma Y, Yang X H, Ye L J, Zhang X Z, Zhang Q, Fu H W 2012 Acta. Phys. Sin. 61 247701 (in Chinese) [邓泉, 马勇, 杨晓红, 叶利娟, 张学忠, 张起, 付宏伟 2012 61 247701]
[39] [40] Zhang F H, Zhang Z Y, Zhang W H, Xue S Q, Yun J N, Yan J F 2008 IEEE 2 681
[41] [42] [43] Jaffe J E, Snyder J A, Lin Z J, Hess A C 2000 Phys. Rev. B 62 1660
[44] Bacaksiz E, Altunbas M, zc-elik S O, Oltulu O, Tomakin M, Yılmaz S 2009 Mater. Sci. Semicond. Process. 12 118
[45] [46] Bai L N, Zheng B J, Lian J S, Jiang Q 2012 Solid. State. Sci. 14 698
[47] [48] Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943
[49] [50] [51] Vanheusden K, Seager C H, Warren W L, Tallant D R 1996 Appl. Phys. Lett. 68 403
[52] Yang P D, Yan H Q, Mao S, Russo R, Johnson J, Saykally R, Morris N, Pham J, He R R, Choi H J 2002 Adv. Funct. Mater 12 323
[53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] [90] [91] [92] [93] [94] [95] [96] [97] [98] [99] [100] [101] [102] [103] [104] [105]
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