-
利用水热法在直流磁控溅射制备的掺铝氧化锌 (AZO) 种子层上制备了不同形貌和光学性能的掺银ZnO纳米棒, 并采用XRD、扫描电镜、透射谱、光发射谱和EDS谱详细研究了Ag离子与Zn离子的摩尔百分比 (RAg/Zn) 及AZO种子层对掺银ZnO纳米棒的结构和光学性质的影响. 随着RAg/Zn的增加, 掺银ZnO 纳米棒的微结构和光学性质的变化与银掺杂诱导的纳米棒的端面尺寸变化有关. 平均端面尺寸的变化归结于种子层颗粒大小和颗粒数密度不同导致掺入的Ag离子的相对比例不同. 溅射15 min的AZO种子层上生长的ZnO纳米棒由于缺陷增多导致在可见光区的发光峰明显强于溅射10 min 的AZO种子层上、相同RAg/Zn 条件下生长的ZnO纳米棒. Ag掺杂产生的点缺陷增多导致可见光区PL波包较宽. 纯ZnO纳米棒的微结构与种子层厚度导致的结晶度和颗粒大小有关.Ag-doped ZnO nanorods with different morphologies and optical properties are synthesized by hydrothermal method on the DC magnetron-sputtered Al-doped ZnO (AZO) seed layers. The influences of the molar ratio of Ag ions to Zn ions (RAg/Zn) and the AZO seed layer on the structural and optical properties of the Ag-doped ZnO nanorods are carefully studied by using X-ray diffractometry, scanning electron microscopy, spectrophotometry, EDS spectrum, etc. The changes in the microstructure and optical property of Ag-doped ZnO nanorods are closely related to the change in the average head-face dimension induced by Ag doping as RAg/Zn increases, owing to the different relative proportions of Ag ions doped in ZnO nanorods resulting from the different particle sizes and densities of the seed layers. The photoluminescence intensity in the visible region for the ZnO nanorods growing on the 15 min-sputtered AZO is stronger than that of the ZnO nanorods growing on the 10 min-sputtered AZO seed layer at the same RAg/Zn, which results from the increased defects in ZnO. More point defects caused by Ag doping are produced as RAg/Zn increases, resulting in the broadening of PL envelope in the visible region. The microstructure of pure ZnO nanorod is related to the seed layer thickness-related degree of crystallinity and particle size.
-
Keywords:
- ZnO nanorods /
- hydrothermal method /
- Ag doping /
- DC magnetron sputtering
[1] Wang Y, Xu X L, Xie W Y, Wang Z B, Lv L, Zhao Y L 2008 Acta Phys. Sin. 57 2582 (in Chinese) [王烨, 许小亮, 谢炜宇, 汪壮兵, 吕柳, 赵亚丽 2008 57 2582]
[2] Wang J W, Bian J M, Sun J C, Liang H W, Zhao J Z, Du G T 2008 Acta Phys. Sin. 57 5212 (in Chinese) ［王经纬, 边继明, 孙景昌, 梁红伟, 赵涧泽, 杜国同 2008 57 5212］
[3] Kong J F, Dou Z M, Wang Z Q, Zhang B, Zhu W H, Zhou K X, Liu M Y, Zhu H, Zhou J F 2012 Chin. Phys. B 21 068101
[4] Zhao S Q, Yang L M, Liu W W, Zhao K, Zhou Y L and Zhou Q L 2010 Chin. Phys. B 19 087204
[5] Li M K, Wang D Z, Ding Y W, Guo X Y, Ding S, Jin H 2007 Mater. Sci. Eng. A 452-453 417
[6] Seo B I, Shaislamov U A, Ha M H, Kim S W, Kim H K, Yang B 2007 Physica E 37 241
[7] Yuan H T, Zhang Y, Gu J H 2004 Acta Phys. Sin. 53 0646 (in Chinese) [袁洪涛, 张跃, 谷锦华 2004 53 0646]
[8] Cui J B, Daghlian C P, Gibson U J, Pu sche R, Geithner P, Ley L 2005 J. Appl. Phys. 97 044315
[9] Cao D, Jiang X D, Li D W, Sun J D 2010 Materials Rev. 24 81 (in Chinese) [曹东, 蒋向东, 李大伟, 孙继伟 2010 材料导报 24 81]
[10] Gao X Y, Lin Q G, Feng H L, Liu Y F, Lu J X 2009 Thin Solid Films 517 4684
[11] Gao X Y, Ma J M, Chen C, Zhao M K, Gu J H, Lu J X 2012 J. Korean Phys. Soc. 60 807
[12] Zhang J, Que W X, Jia Q Y, Ye X D, Ding Y C 2011 Appl. Surf. Sci. 257 10134
[13] Tang B, Deng H, Shui Z W, Wei M, Chen J J, Hao X 2007 Acta Phys. Sin. 56 5176 (in Chinese) [唐斌, 邓宏, 税正伟, 韦敏, 陈金菊, 郝昕 2007 56 5176]
[14] Kim J Y, Cho J W, Kim S H 2011 Mater. Lett. 65 1161
[15] Song J, Lim S 2007 J. Phys. Chem. C 111 596
[16] Wei X Y, Qi K C, Lin Z L, Yuan H M, Wang X J, Zhang G H 2010 Semiconductor Optoelectronics 31 570 (in Chinese) [韦新颖, 祁康成, 林祖伦, 袁红梅, 王小菊, 张国宏 2010 半导体光电 31 570]
[17] Karunakaran C, Rajeswari V, Gomathisankar P 2011 Solid State Sci. 13 923
[18] Wang B Q, Xia C H, Fu Q, Wang P W, Dan X D, Yu D P 2008 Acta Phys. Chim. Sin. 24 1165 (in Chinese) [王百齐, 夏春辉, 富强, 王朋伟, 单旭东, 俞大鹏 2008 物理化学学报 24 1165]
[19] Segmuller A, Murakami M, Rosenberg R 1988 Analytical Techniques for Thin Films (Boston: Academic Press) p143
[20] Cebulla R, Wendi R, Ellmer K 1998 J. Appl. Phys. 83 1087
[21] Ji L W, Peng S M, Wu J S, Shih W S, Wu C Z, Tang I T 2009 J. Phys. Chem. Solids 70 1359
[22] Yang J H, Lang J H, Yang L L, Zhang Y J, Wang D D, Fan H G, Liu H L, Wang Y X, Gao M, Feng B 2008 Appl. Surf. Sci. 255 2500
[23] Yang J H, Lang J H, Yang L L, Zhang Y J, Wang D D, Fan H G, Liu H L, Wang Y X, Gao M 2008 J. Alloys Compd 450 521
-
[1] Wang Y, Xu X L, Xie W Y, Wang Z B, Lv L, Zhao Y L 2008 Acta Phys. Sin. 57 2582 (in Chinese) [王烨, 许小亮, 谢炜宇, 汪壮兵, 吕柳, 赵亚丽 2008 57 2582]
[2] Wang J W, Bian J M, Sun J C, Liang H W, Zhao J Z, Du G T 2008 Acta Phys. Sin. 57 5212 (in Chinese) ［王经纬, 边继明, 孙景昌, 梁红伟, 赵涧泽, 杜国同 2008 57 5212］
[3] Kong J F, Dou Z M, Wang Z Q, Zhang B, Zhu W H, Zhou K X, Liu M Y, Zhu H, Zhou J F 2012 Chin. Phys. B 21 068101
[4] Zhao S Q, Yang L M, Liu W W, Zhao K, Zhou Y L and Zhou Q L 2010 Chin. Phys. B 19 087204
[5] Li M K, Wang D Z, Ding Y W, Guo X Y, Ding S, Jin H 2007 Mater. Sci. Eng. A 452-453 417
[6] Seo B I, Shaislamov U A, Ha M H, Kim S W, Kim H K, Yang B 2007 Physica E 37 241
[7] Yuan H T, Zhang Y, Gu J H 2004 Acta Phys. Sin. 53 0646 (in Chinese) [袁洪涛, 张跃, 谷锦华 2004 53 0646]
[8] Cui J B, Daghlian C P, Gibson U J, Pu sche R, Geithner P, Ley L 2005 J. Appl. Phys. 97 044315
[9] Cao D, Jiang X D, Li D W, Sun J D 2010 Materials Rev. 24 81 (in Chinese) [曹东, 蒋向东, 李大伟, 孙继伟 2010 材料导报 24 81]
[10] Gao X Y, Lin Q G, Feng H L, Liu Y F, Lu J X 2009 Thin Solid Films 517 4684
[11] Gao X Y, Ma J M, Chen C, Zhao M K, Gu J H, Lu J X 2012 J. Korean Phys. Soc. 60 807
[12] Zhang J, Que W X, Jia Q Y, Ye X D, Ding Y C 2011 Appl. Surf. Sci. 257 10134
[13] Tang B, Deng H, Shui Z W, Wei M, Chen J J, Hao X 2007 Acta Phys. Sin. 56 5176 (in Chinese) [唐斌, 邓宏, 税正伟, 韦敏, 陈金菊, 郝昕 2007 56 5176]
[14] Kim J Y, Cho J W, Kim S H 2011 Mater. Lett. 65 1161
[15] Song J, Lim S 2007 J. Phys. Chem. C 111 596
[16] Wei X Y, Qi K C, Lin Z L, Yuan H M, Wang X J, Zhang G H 2010 Semiconductor Optoelectronics 31 570 (in Chinese) [韦新颖, 祁康成, 林祖伦, 袁红梅, 王小菊, 张国宏 2010 半导体光电 31 570]
[17] Karunakaran C, Rajeswari V, Gomathisankar P 2011 Solid State Sci. 13 923
[18] Wang B Q, Xia C H, Fu Q, Wang P W, Dan X D, Yu D P 2008 Acta Phys. Chim. Sin. 24 1165 (in Chinese) [王百齐, 夏春辉, 富强, 王朋伟, 单旭东, 俞大鹏 2008 物理化学学报 24 1165]
[19] Segmuller A, Murakami M, Rosenberg R 1988 Analytical Techniques for Thin Films (Boston: Academic Press) p143
[20] Cebulla R, Wendi R, Ellmer K 1998 J. Appl. Phys. 83 1087
[21] Ji L W, Peng S M, Wu J S, Shih W S, Wu C Z, Tang I T 2009 J. Phys. Chem. Solids 70 1359
[22] Yang J H, Lang J H, Yang L L, Zhang Y J, Wang D D, Fan H G, Liu H L, Wang Y X, Gao M, Feng B 2008 Appl. Surf. Sci. 255 2500
[23] Yang J H, Lang J H, Yang L L, Zhang Y J, Wang D D, Fan H G, Liu H L, Wang Y X, Gao M 2008 J. Alloys Compd 450 521
计量
- 文章访问数: 7449
- PDF下载量: 1004
- 被引次数: 0
下载:
