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A new type of high-performance back reflector based on one-dimensional photonic crystal (1D PC) is introduced in this paper. The 1D PC is designed by alternately depositing a-Si and a-SiOx layers. Firstly the influences of refractive index, layer-thickness and corresponding periodicity on the band-gap of 1D PC are simulated using the finite difference time domain method. Based on the simulation results 1D PCs with different bandgaps are experimentally deposited. Just by adjusting the a-Si layer thickness, the high-reflection bandgaps in ranges of 500-750 nm and 650-1100 nm are easily achieved. The reflectivity values of 96.4% and 99% in the above-mentioned bandgaps are obtained. Comparing with the cells without a back reflector, a relative enhancement of 18.3% and 15.2% can be achieved for the short circuit current densities of a-Si:H single-junction and a-Si:H/μc-Si:H tandem solar cells, respectively, by integrating the above optimized 1D PC in the back. Also the influences of incident angles of white light, TE waves and TM waves on the reflectivity of 1D PC are studied using a software to generate spectrophotometric and ellipsometric spectra of a thin film stack. It is found that the reflectivity of 1D PC in solar cell is less affected by the changes of incident angles from air.
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Keywords:
- silicon thin film solar cell /
- one dimension photonic crystal /
- tunable bandgap /
- back reflector
[1] Muller J, Rech B, Springer J, Vanecek M 2004 Solar Energy 77 917
[2] Sai H, Jia H, Kondo M 2010 J. Appl. Phys. 108 044505
[3] Ni J, Zhang J J, Cao Y, Wang X B, Li C, Chen X L, Geng X H, Zhao Y 2011 Chin. Phys. B 20 087309
[4] Li G J, Hou G F, Han X Y, Yuan Y J, Wei C C, Sun J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 1674
[5] Yue G, Sivec L, Owens J M, Yan B, Yang J, Guha S 2009 Appl. Phys. Lett. 95 263501
[6] Zhou D Y, Biswas R 2008 J. Appl. Phys. 103 093102
[7] Akimov Y A, Koh W S 2011 Appl. Phys. Lett. 99 063102
[8] Baba T 2008 Nature Photon. 2 465
[9] Krauss T F, De la Rue R M 1999 Prog. Quantum Electron. 23 51
[10] Bermel P, Luo C, Zeng L, Kimerling L C, Joannopoulos J D 2007 Opt. Express 15 16986
[11] Biswas R, Bhattacharya J, Lewis B, Chakravarty N, Dalal V 2010 Solar Energy Materials and Solar Cells 94 2337
[12] Zhang Y H, Qiu X J, Li H Q, Chen H 2001 Physics 30 616 (in Chinese) [张拥华, 仇新杰, 李宏强, 陈宏 2001 物理 30 616]
[13] Dong J W, Chen Y H, Jiang H Z 2007 Acta Phys. Sin. 56 268 (in Chinese) [董建文, 陈溢杭, 江河洲 2007 56 268]
[14] Ma X Y 2010 Principle and Aplication of Photonic Crystal (Beijing: Science Press) p38 (in Chinese) [马锡英 2010 光子晶体原理及其应用 (北京: 科学出版社) 第38页]
[15] Matsumoto Y, Melendez F, Asomoza R 2001 Solar Energy Materials and Solar Cells 66 163
[16] Bosch S, Ferre-Borrull J, Sancho-Parramon J 2001 Solid-State Electron. 45 703
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[1] Muller J, Rech B, Springer J, Vanecek M 2004 Solar Energy 77 917
[2] Sai H, Jia H, Kondo M 2010 J. Appl. Phys. 108 044505
[3] Ni J, Zhang J J, Cao Y, Wang X B, Li C, Chen X L, Geng X H, Zhao Y 2011 Chin. Phys. B 20 087309
[4] Li G J, Hou G F, Han X Y, Yuan Y J, Wei C C, Sun J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 1674
[5] Yue G, Sivec L, Owens J M, Yan B, Yang J, Guha S 2009 Appl. Phys. Lett. 95 263501
[6] Zhou D Y, Biswas R 2008 J. Appl. Phys. 103 093102
[7] Akimov Y A, Koh W S 2011 Appl. Phys. Lett. 99 063102
[8] Baba T 2008 Nature Photon. 2 465
[9] Krauss T F, De la Rue R M 1999 Prog. Quantum Electron. 23 51
[10] Bermel P, Luo C, Zeng L, Kimerling L C, Joannopoulos J D 2007 Opt. Express 15 16986
[11] Biswas R, Bhattacharya J, Lewis B, Chakravarty N, Dalal V 2010 Solar Energy Materials and Solar Cells 94 2337
[12] Zhang Y H, Qiu X J, Li H Q, Chen H 2001 Physics 30 616 (in Chinese) [张拥华, 仇新杰, 李宏强, 陈宏 2001 物理 30 616]
[13] Dong J W, Chen Y H, Jiang H Z 2007 Acta Phys. Sin. 56 268 (in Chinese) [董建文, 陈溢杭, 江河洲 2007 56 268]
[14] Ma X Y 2010 Principle and Aplication of Photonic Crystal (Beijing: Science Press) p38 (in Chinese) [马锡英 2010 光子晶体原理及其应用 (北京: 科学出版社) 第38页]
[15] Matsumoto Y, Melendez F, Asomoza R 2001 Solar Energy Materials and Solar Cells 66 163
[16] Bosch S, Ferre-Borrull J, Sancho-Parramon J 2001 Solid-State Electron. 45 703
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