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Ferroelectric and antiferroelectric HfO2 nano-films were prepared by changing silicon doping concentration, and their basic properties conpared in terms of polarization hysteresis, capacitance-voltage and leakage-voltage behavior, as well as the effect of temperature on phase stability. Antiferroelectric thin film exhibits a higher dielectric constant than the ferroelectric film, and is characterized by the double polarization hysteresis loops due to reversible antiferroelectric-ferroelectric phase transition induced during loading and unloading processes of electric field. No antiferroelectric-paraelectric phase transition is observed at measuring temperatures up to 185 ℃. The negative differential resistivity effect observed in leakage measurements is attributed to the contributions from slow response mechanisms like polarization relaxation.
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Keywords:
- hafnium oxide thin films /
- ferroelectric /
- antiferroelectric /
- phase transition
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[2] Choi J H, Mao Y, Chang J P 2011 Mater. Sci. Eng. R. 72 97
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[8] [9] Zhou D Y, Mller J, Xu J, Knebel S, Bruhaus D, Schrder U 2012 Appl. Phys. Lett. 100 082905
[10] [11] Schroeder U, Mueller S, Mueller J, Yurchuk E, Martin D, Adelmann C, Schloesser T, Bentum R, Mikolajick T 2013 ECS J. Solid State Sci. Technol. 2 N69
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[14] [15] Fujisaki Y 2013 Jpn. J. Appl. Phys. 52 040001
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[18] [19] Bscke T S, Teichert S, Bruhaus D, Mller J, Schrder U, Bttger U, Mikolajick T 2011 Appl. Phys. Lett. 99 112904
[20] [21] Kim K, Lee S 2006 J. Appl. Phys. 100 051604
[22] [23] Kato Y, Kaneko Y, Tanaka H, Kaibara K, Koyama S, Isogai K, Yamada T, Shimada Y 2007 Jpn. J. Appl. Phys. 46 2157
[24] Zhou D Y, Xu J, Li Q, Guan Y, Cao F, Dong X L, Mller J, Schenk T, Schrder U 2013 Appl. Phys. Lett. 103 192904
[25] [26] Yang T Q, Yao X, Zhang L Y 2000 J. Inorg. Mater. 15 807 (in Chinese)[杨同青, 姚熹, 张良莹 2000 无机材料学报 15 807]
[27] [28] Zhao X, Vanderbilt D 2002 Phys. Rev. B 65 233106
[29] [30] [31] Maity A K, Lee J Y, Sen A, Maiti H S 2004 Jpn. J. Appl. Phys. 43 7155
[32] [33] Watanabe K, Hartmann A J, Lamb R N, Scott J F 1998 J. Appl. Phys. 84 2170
[34] Scott J F, Melnick B M, Cuchiaro J D, Zuleeg R, Araujo C A, McMillan L D, Scott M C 1994 Integr. Ferroelectr. 4 85
[35] [36] [37] Dawber M, Scott J F 2004 J. Phys. : Condens. Matter 16 L515
[38] Waser R, Klee M 1992 Integr. Ferroelectr. 2 23
[39] -
[1] Wilk G D, Wallace R M, Anthony J M 2001 J. Appl. Phys. 89 5243
[2] Choi J H, Mao Y, Chang J P 2011 Mater. Sci. Eng. R. 72 97
[3] [4] [5] Bauer A J, Lemberger M, Erlbacher T, Weinreich W 2008 Materials Science Forum 573-574 165
[6] [7] Bscke T S, Mller J, Bruhaus D, Schrder U, Bttger U 2011 Appl. Phys. Lett. 99 102903
[8] [9] Zhou D Y, Mller J, Xu J, Knebel S, Bruhaus D, Schrder U 2012 Appl. Phys. Lett. 100 082905
[10] [11] Schroeder U, Mueller S, Mueller J, Yurchuk E, Martin D, Adelmann C, Schloesser T, Bentum R, Mikolajick T 2013 ECS J. Solid State Sci. Technol. 2 N69
[12] [13] Mller J, Bscke T S, Schrder U, Mueller S, Bruhaus D, Bttger U, Frey L, Mikolajick T 2012 Nano Lett. 12 4318
[14] [15] Fujisaki Y 2013 Jpn. J. Appl. Phys. 52 040001
[16] [17] Mller J, Bscke T S, Schrder U, Hoffmann R, Mikolajick T, Frey L 2012 IEEE Electron Device Lett. 33 185
[18] [19] Bscke T S, Teichert S, Bruhaus D, Mller J, Schrder U, Bttger U, Mikolajick T 2011 Appl. Phys. Lett. 99 112904
[20] [21] Kim K, Lee S 2006 J. Appl. Phys. 100 051604
[22] [23] Kato Y, Kaneko Y, Tanaka H, Kaibara K, Koyama S, Isogai K, Yamada T, Shimada Y 2007 Jpn. J. Appl. Phys. 46 2157
[24] Zhou D Y, Xu J, Li Q, Guan Y, Cao F, Dong X L, Mller J, Schenk T, Schrder U 2013 Appl. Phys. Lett. 103 192904
[25] [26] Yang T Q, Yao X, Zhang L Y 2000 J. Inorg. Mater. 15 807 (in Chinese)[杨同青, 姚熹, 张良莹 2000 无机材料学报 15 807]
[27] [28] Zhao X, Vanderbilt D 2002 Phys. Rev. B 65 233106
[29] [30] [31] Maity A K, Lee J Y, Sen A, Maiti H S 2004 Jpn. J. Appl. Phys. 43 7155
[32] [33] Watanabe K, Hartmann A J, Lamb R N, Scott J F 1998 J. Appl. Phys. 84 2170
[34] Scott J F, Melnick B M, Cuchiaro J D, Zuleeg R, Araujo C A, McMillan L D, Scott M C 1994 Integr. Ferroelectr. 4 85
[35] [36] [37] Dawber M, Scott J F 2004 J. Phys. : Condens. Matter 16 L515
[38] Waser R, Klee M 1992 Integr. Ferroelectr. 2 23
[39]
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