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Preparation of GaN nanowires by nonammonia method and their photoelectronic properties

Zhao Jun-Wei Zhang Yue-Fei Song Xue-Mei Yan Hui Wang Ru-Zhi

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Preparation of GaN nanowires by nonammonia method and their photoelectronic properties

Zhao Jun-Wei, Zhang Yue-Fei, Song Xue-Mei, Yan Hui, Wang Ru-Zhi
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  • Single-crystal hexagonal wurtzite GaN nanowires were successfully synthesized by using plasma-enhanced chemical vapor deposition (PECVD) via vapor-liquid-solid (V-L-S) mechanism, under the condition of non-ammonia at 1050 ℃. Raman spectra show that the as-synthesized nanowires have large disorder surface, in which there is a significantly small size effect. Furthermore, it is also observed that the prepared nanowires have typical photoluminescence characteristics and good field emission properties.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11274029, 11074017), the Importation and Development of High-Caliber Talents Project of Beijing Municipal Institutions, China (Grant No. CIT&TCD201204037), the Jing-Hua Talents Project of Beijing University of Technology, China (Grant No. 2014-JH-L07), the Beijing Nova program (Grant No. 2080B10), and the Foundation on the Creative Research Team Construction Promotion Project of Beijing Municipal Institution, China (Grant No. IDHT20140506).
    [1]

    David Tsivion, Mark Schvartzman, Ronit Popovitz-Biro, Palle von Huth, Ernesto Joselevich 2011 Science 333 1003

    [2]

    Yongho Choi, Mario Michan, Jason L Johnson, Ali Kashefian Naieni, Ant Ural 2012 J. Appl. Phys. 111 044308

    [3]

    Avit G, Lekhal K, Andre Y, Bougerol C, Reveret F, Leymarie J, Gil E, Monier G, Castelluci D, Trassoudaine A 2014 Nano Lett. 14 559

    [4]

    Chen C C, Li Y W, Ru Z S, Xue M W, Bo Y H 2013 Acta Phys. Sin. 62 77701 (in Chinese)[陈程程, 刘立英, 王如志, 宋雪梅, 王波, 严辉 2013 62 77701]

    [5]

    Zhang M L, Yang R X, Li Z X, Cao X Z, Wang B Y, Wang X Hui 2013 Acta Phys.Sin. 62 117103 (in Chinese)[张明兰, 杨瑞霞, 李卓昕, 曹兴忠, 王宝义, 王晓晖 2013 62 117103]

    [6]

    Han W Q, Fan S S, Li Q Q, Hu Y D 1997 Science 277 1287

    [7]

    Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Qiao J L, Du X Q 2011 Acta Phys. Sin. 60 057902 (in Chinese)[王晓晖, 常本康, 钱芸生, 高频, 张益军 2011 60 057902]

    [8]

    Shi W S, Zhang Y F, Wang N, Lee C S, Lee S T 2001 Chem. Phys. Lett. 345 377

    [9]

    Peng H Y, Wang N, Zhou X T, Zheng Y F, Lee C S, Lee S T 2000 Chem. Phys. Lett. 327 263

    [10]

    Maoqi He, Indira Minus, Piezhen Zhou, Mohammed S N, Halpern J B 2000 Appl. Phys. Lett. 77 3731

    [11]

    Tevye Kuykendall, Peter Pauzauskie, Sangkwon Lee, Zhang Y F, Joshua Goldberger, Yan P D 2003 Nano Lett. 3 1063

    [12]

    Liu B D, Bando Y, Tang C C, Xu F F, Hu J Q, Golberg D 2005 J. Phys. Chem. B 109 17082

    [13]

    Wang Ying, Xue C S, Zhuang H Z, Wang Z P, Zhang D D, Huang Y L, Liu W J 2009 Applied Surface Science 255 7719

    [14]

    Dinh D V, Kang S M, Yang J H, Kim S W, Yoon D H 2009 J. Cryst. Growth 311 495

    [15]

    Yongho Choi, Mario Michan, Jason L Johnson, Ali Kashefian Naieni, Ant Ural 2012 J. Appl. Phys. 111 044308

    [16]

    Yang Y, Ling Y C, Wang G M, Lu X H, Tong Y X, Yat Li 2013 Nano scale 5 1820

    [17]

    Wang Y Q, Wang R Z, Li Y J, Zhang Y F, Zhu M K, Wang B B, Hui Yan 2013 Cryst. Eng. Comm. 15 1626

    [18]

    Chen C C, Yeh C C, Chen C H, Yu M Y, Liu H L, Wu J J, Chen K H, Chen L C, Peng J Y, Chen Y F 2001 J. Am. Chem. Soc. 123 2791

    [19]

    Jason L Johnson, Yongho Choi, Ant Ural 2008 J. Vac. Sci. Technol. B 26 1841

    [20]

    Wang B B, Dong G B, Xu X Z 2011 Applied Surface Science 258 1677

    [21]

    Voslker Schmidt, Ulrich Gösele 2007 Science 316 698

    [22]

    Wagner R S, Ellis W C 1964 Appl. Phys. Lett. 4 89

    [23]

    Peng H Y, Wang N, Zhou X T, Zheng Y F, Lee C S, Lee S T 2000 Chem. Phys. Lett. 327 263

    [24]

    Hannon J B, Kodambaka S, Ross F M, Tromp R M 2006 Nature 440 69

    [25]

    Li J Y, Chen X L, Cao Y G, Qiao Z Y, Lan Y C 2000 Applied Physics A Materials Science m& Processing 71 345

    [26]

    Liu H L, Chen C C, Chia C T, Yeh C C, Chen C H, Yu M Y, Keller S, Denbaars S P 2001 Chemical Physics Letters 345 245

    [27]

    Ogino T, Aoki M 1980 Jpn. J. Appl. Phys. 19 2395

    [28]

    Campbell I H, Fauchet P M 1986 Solid State Communications 58 739

    [29]

    Chang K W, Wu J J 2002 J. Phys. Chem. B 106 7796

    [30]

    Ghulam Nabi, Chuanbao Cao, Sajad Hussain, Waheed S Khan, Sagar R R, Zulfiqar Ali, Butt F K, Zahid Usman, Dapeng Yu 2012 Cryst. Eng. Comm. 14 8492

    [31]

    Lyu S C, Cha O H, Suh E K, Ruh H, Lee H J, Lee C J 2003 Chemical Physics Letters 367 136

    [32]

    Chin A H, Ahn T S, Li H W, Vaddiraju S, Bardeen C J, Ning C Z, Sunkara M K 2007 Nano Letters 7 626

    [33]

    Ng D K T, Hong M H, Tan L S, Zhu Y W, Sow C H 2007 Nanotechnology 18 375707

    [34]

    Gan H Y, Liu H B, Li Y J, Zhao Q, Li Y L, Wang S, Jiu T G, Wang N, He X R, Yu D P, Zhu D B 2005 J. Am. Chem. Soc. 127 12452

    [35]

    Dang C, Wang B B, Wang F Y 2009 Vacuum 83 1414

  • [1]

    David Tsivion, Mark Schvartzman, Ronit Popovitz-Biro, Palle von Huth, Ernesto Joselevich 2011 Science 333 1003

    [2]

    Yongho Choi, Mario Michan, Jason L Johnson, Ali Kashefian Naieni, Ant Ural 2012 J. Appl. Phys. 111 044308

    [3]

    Avit G, Lekhal K, Andre Y, Bougerol C, Reveret F, Leymarie J, Gil E, Monier G, Castelluci D, Trassoudaine A 2014 Nano Lett. 14 559

    [4]

    Chen C C, Li Y W, Ru Z S, Xue M W, Bo Y H 2013 Acta Phys. Sin. 62 77701 (in Chinese)[陈程程, 刘立英, 王如志, 宋雪梅, 王波, 严辉 2013 62 77701]

    [5]

    Zhang M L, Yang R X, Li Z X, Cao X Z, Wang B Y, Wang X Hui 2013 Acta Phys.Sin. 62 117103 (in Chinese)[张明兰, 杨瑞霞, 李卓昕, 曹兴忠, 王宝义, 王晓晖 2013 62 117103]

    [6]

    Han W Q, Fan S S, Li Q Q, Hu Y D 1997 Science 277 1287

    [7]

    Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Qiao J L, Du X Q 2011 Acta Phys. Sin. 60 057902 (in Chinese)[王晓晖, 常本康, 钱芸生, 高频, 张益军 2011 60 057902]

    [8]

    Shi W S, Zhang Y F, Wang N, Lee C S, Lee S T 2001 Chem. Phys. Lett. 345 377

    [9]

    Peng H Y, Wang N, Zhou X T, Zheng Y F, Lee C S, Lee S T 2000 Chem. Phys. Lett. 327 263

    [10]

    Maoqi He, Indira Minus, Piezhen Zhou, Mohammed S N, Halpern J B 2000 Appl. Phys. Lett. 77 3731

    [11]

    Tevye Kuykendall, Peter Pauzauskie, Sangkwon Lee, Zhang Y F, Joshua Goldberger, Yan P D 2003 Nano Lett. 3 1063

    [12]

    Liu B D, Bando Y, Tang C C, Xu F F, Hu J Q, Golberg D 2005 J. Phys. Chem. B 109 17082

    [13]

    Wang Ying, Xue C S, Zhuang H Z, Wang Z P, Zhang D D, Huang Y L, Liu W J 2009 Applied Surface Science 255 7719

    [14]

    Dinh D V, Kang S M, Yang J H, Kim S W, Yoon D H 2009 J. Cryst. Growth 311 495

    [15]

    Yongho Choi, Mario Michan, Jason L Johnson, Ali Kashefian Naieni, Ant Ural 2012 J. Appl. Phys. 111 044308

    [16]

    Yang Y, Ling Y C, Wang G M, Lu X H, Tong Y X, Yat Li 2013 Nano scale 5 1820

    [17]

    Wang Y Q, Wang R Z, Li Y J, Zhang Y F, Zhu M K, Wang B B, Hui Yan 2013 Cryst. Eng. Comm. 15 1626

    [18]

    Chen C C, Yeh C C, Chen C H, Yu M Y, Liu H L, Wu J J, Chen K H, Chen L C, Peng J Y, Chen Y F 2001 J. Am. Chem. Soc. 123 2791

    [19]

    Jason L Johnson, Yongho Choi, Ant Ural 2008 J. Vac. Sci. Technol. B 26 1841

    [20]

    Wang B B, Dong G B, Xu X Z 2011 Applied Surface Science 258 1677

    [21]

    Voslker Schmidt, Ulrich Gösele 2007 Science 316 698

    [22]

    Wagner R S, Ellis W C 1964 Appl. Phys. Lett. 4 89

    [23]

    Peng H Y, Wang N, Zhou X T, Zheng Y F, Lee C S, Lee S T 2000 Chem. Phys. Lett. 327 263

    [24]

    Hannon J B, Kodambaka S, Ross F M, Tromp R M 2006 Nature 440 69

    [25]

    Li J Y, Chen X L, Cao Y G, Qiao Z Y, Lan Y C 2000 Applied Physics A Materials Science m& Processing 71 345

    [26]

    Liu H L, Chen C C, Chia C T, Yeh C C, Chen C H, Yu M Y, Keller S, Denbaars S P 2001 Chemical Physics Letters 345 245

    [27]

    Ogino T, Aoki M 1980 Jpn. J. Appl. Phys. 19 2395

    [28]

    Campbell I H, Fauchet P M 1986 Solid State Communications 58 739

    [29]

    Chang K W, Wu J J 2002 J. Phys. Chem. B 106 7796

    [30]

    Ghulam Nabi, Chuanbao Cao, Sajad Hussain, Waheed S Khan, Sagar R R, Zulfiqar Ali, Butt F K, Zahid Usman, Dapeng Yu 2012 Cryst. Eng. Comm. 14 8492

    [31]

    Lyu S C, Cha O H, Suh E K, Ruh H, Lee H J, Lee C J 2003 Chemical Physics Letters 367 136

    [32]

    Chin A H, Ahn T S, Li H W, Vaddiraju S, Bardeen C J, Ning C Z, Sunkara M K 2007 Nano Letters 7 626

    [33]

    Ng D K T, Hong M H, Tan L S, Zhu Y W, Sow C H 2007 Nanotechnology 18 375707

    [34]

    Gan H Y, Liu H B, Li Y J, Zhao Q, Li Y L, Wang S, Jiu T G, Wang N, He X R, Yu D P, Zhu D B 2005 J. Am. Chem. Soc. 127 12452

    [35]

    Dang C, Wang B B, Wang F Y 2009 Vacuum 83 1414

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Publishing process
  • Received Date:  14 January 2014
  • Accepted Date:  25 February 2014
  • Published Online:  05 June 2014

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