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One of the models for the carbon nanotube array with parallel grids is proposed. The actual electric field at the top of the carbon nanotubes and the field enhancement factor are calculated analytically with the image charge method and floated sphere model. The effects of the geometrical parameters of the device and the contact resistance on actual electric field, field enhancement factor at the top of carbon nanotubes, and the field emission current from the gated carbon nanotubes are investigated. The calculation results show that the carbon nanotube array has the best density for field emission when the intertube distance is twice the height of carbon nanotube. The actual electric field and the field emission current from gated carbon nanotube are greatly reduced by the contact resistance. When the contact resistance is larger than 800 kΩ, the emission current from carbon nanotube tends to be zero and the field emission properties are improved via modulating gate voltage.
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Keywords:
- carbon nanotube array with parallel grid /
- floated sphere /
- field enhancement factor /
- contact resistance
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[1] Ijima S, Ichihashi T 1993 Nature 363 603
[2] Milne W I, Teo K B K, Chhowalla M, Amaratunga G A J, Pribat D, Legagneux P, Pirio G, Vu T B, Semet V 2002 Curt. Appl. Phys. 2 509
[3] Chen Q, Dai L 2001 J. Nanosci. Nanotech. 1 43
[4] Xu X P, Brandes G R 1999 Appl. Phys. Lett. 74 2549
[5] Lee Y H, Jang Y T, Kim D H, Ahn J H, Ju B 200l Adv. Mater. 13 479
[6] Yuan X S, Zhang Y, Sun L M, Li X Y, Deng S Z, Xu N S, Yan Y 2012 Acta Phys. Sin. 61 216101 (in Chinese) [袁学松, 张宇, 孙利民, 黎晓云, 邓少芝,许宁生, 鄢扬 2012 61 216101]
[7] Park J H, Son G H, Moon J S, Han J H, Berdinsky A S, Kuvshinov D G, Yoo J B, Park C Y 2005 J. Vac. Sci. Technol. B 23 749
[8] Chen L F, Wang L, Yu X G, Zhang S J, Li D, Xu C 2013 Appl. Surf. Sci. 265 187
[9] Ye Y, Xiao X J, Guo T L, Li W Z, Jiang Y D 2012 J. Functional Mater. 43 1221 (in Chinese) [叶芸, 肖晓晶, 郭太良, 李威志, 蒋亚东 2012 功能材料 43 1221]
[10] Chung D S, Park S H, Lee H W, Choi J H, Cha S N, Kim J W, Jang J E, Min K W, Cho S H, Yoon M J, Lee J S, Lee C K, Yoo J H, Kim J M, Jung J E, Jin Y W, Park Y J, You J B 2002 Appl. Phys. Lett. 80 4045
[11] Gao Y B, Zhang X B Lei W, Liu M, Zhang Y N, den Daniel E 2005 Appl. Surf. Sci. 243 19
[12] Zhang Y A, Lin J Y, Wu C X, Zheng Y, Lin Z X, Guo T L 2011 J. Functional Mater. 42 1130 (in Chinese) [张永爱, 林金阳, 吴朝兴, 郑勇, 林志贤, 郭太良 2011 功能材料 42 1130]
[13] Zhao X X, Zhang G M 2002 J. Vac. Sci. Technol. 22 358 (in Chinese) [赵晓雪, 张耿民 2002 真空科学与技术学报 22 358]
[14] Nicolaescu D, Filip V, Kanemaru S, Itoh J 2003 J. Vac. Sci. Technol. B 21 366
[15] Lei D, Wang W B, Zeng L Y, Liang J Q 2009 Acta Phys. Sin. 58 3384 (in Chinese) [雷达, 王维彪, 曾乐勇, 梁静秋 2009 58 3384]
[16] Lei D, Zeng L Y, Xia Y X, Chen S, Liang J Q, Wang W B 2007 Acta Phys. Sin. 56 6616 (in Chinese) [雷达, 曾乐勇, 夏玉学, 陈松, 梁静秋, 王维彪 2007 56 6616]
[17] Zhu Y B, Wang W L, Liao K J 2002 Acta Phys. Sin. 51 2336 (in Chinese) [朱亚波, 王万录, 廖克俊 2002 51 2336]
[18] Dai J F, Mu X W, Qiao X W, Chen X X, Wang J H 2010 Chin. Phys. B 19 057201
[19] Wang X Q, Li L, Chu N J, Jin H X, Ge H L 2008 Acta Phys. Sin. 57 7173 (in Chinese) [王新庆, 李良, 褚宁杰, 金红晓, 葛洪良 2008 57 7173]
[20] Pan J Y, Zhang W Y, Gao Y L 2010 Acta Phys. Sin. 59 8763 (in Chinese) [潘金艳, 张文彦, 高云龙 2010 59 8763]
[21] Fowler R H, Nordheim D L 2003 Proc. Roy. Soc. (London) A 119 173
[22] Miller H C 1967 J. Appl. Phys. 38 1450
[23] Wang X Q, Wang M, Li Z H, Xu Y B, He P M 2005 Ultramicroscopy 102 181
[24] L W H, Zhang S 2012 Acta Phys. Sin. 61 018801 (in Chinese) [吕文辉, 张帅 2012 61 018801]
[25] She J C, Xu N S, Deng S Z, Chen J, Bishpo H, Huq S E, Wang L, Zhong D Y, Wang E G 2003 Appl. Phys. Lett. 83 2671
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