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偏置电场对聚对苯乙烯激发态弛豫特性的影响

程萍 高峰 陈向东 杨继平

引用本文:
Citation:

偏置电场对聚对苯乙烯激发态弛豫特性的影响

程萍, 高峰, 陈向东, 杨继平

Effect of the electric field on the decay of excited states in poly-phenylenevinylene

Cheng Ping, Gao Feng, Chen Xiang-Dong, Yang Ji-Ping
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  • 为探讨洞悉电场对有机发光二极管电致荧光量子效率的影响,通过激发-探测超快光谱技术研究了激子在电场下的瞬态行为.与单重态激子相应的激发态在230 μJ/cm2激发强度下,显示了快慢两个弛豫过程. 快慢组分的权重因子及快组分弛豫时间常数是电场相关的, 在6.4×105 V/cm的电场下,与无偏置电场相比,激子的快组分弛豫时间加速,快组分的权重因子由22%增加为72%,约50%的初始激子又通过电场而离解. 慢组分是电场无关的,其弛豫时间常数为890 ps. 实验结果还揭示了由激发光所产生的长程声学声子,其声速为17 /ps.
    To gain an insight into the effect of electric field on the electro-luminescence of organic light emission diode, the ultrafast pump-probe spectroscopy is used to investigate the transient phenomena of the excitons induced by the electric field. Under the excitation density of 230 μJ/cm2, the decay of the singlet excitons shows a fast and a slow component. The amplitude factor and the relaxation time of fast component are field-dependent. Compared with the zero biascase, the relaxation time of the fast component becomes faster at a bias of 6.4×105 V/cm, its amplitude factor is increased from 22% to 72%, about 50% initial excitons are dissociated by the electric field. The slow component is field-independent, its relaxation time-constant is about 890 ps. The longitudinal acoustic phonons with sound velocity of 17 /ps generated by excitation pulse are observed.
    • 基金项目: 国家自然科学基金(批准号:20573030)资助的课题.
    [1]

    [1]Mezyk J, Meinardi F, Cocchi M 2008 Appl. Phys. Lett. 93 093301

    [2]

    [2]Kalinowski J 2005 Organic Light Emitting Diodes: Principles, Characteristics, and Processes (New York: Marcel Dekker) p135

    [3]

    [3]Stampor W, Mezyk J 2007 Chem. Phys. 337 151

    [4]

    [4]Kalinowski J, Mezyk J, Meinardi F, Tubino R, Cocchi M, Virgili D 2005 J. Appl. Phys. 98 063532-1

    [5]

    [5]Holzer W, Penzkofer A, Tsuboi T 2005 Chem. Phys. 308 93

    [6]

    [6]Jiang H, Xu X H, Sun X, Fu R L, Chu J H 1999 Acta Phys. Sin. 48 2327 (in Chinese) [姜浩、徐晓华、孙鑫、傅柔励、褚君浩 1999 48 2327]

    [7]

    [7]Arkhipov V I, Bssler H, Deussen M, Gbel E O, Kersting R, Kurz H, Lemmer U, Mahrt R F 1995 Phys. Rev. B 52 4932

    [8]

    [8]Yang H, Zhang T Q, Wang S F, Gong Q H 2000 Acta Phys. Sin. 49 1292 (in Chinese) [杨宏、张铁桥、王树峰、龚旗煌 2000 49 1292]

    [9]

    [9]Gadermaier C, Grasse F, Perissinotto S, Graf M, Galbrecht F, Scherf U, List E J W, Lanzani G 2008 Phys. Rev. Lett. 100 057401

    [10]

    ]Bssler H 1997 Primary Photoexcitations in Conjugated Polymers: Molecular Exciton Versus Semiconductor Band Model (Singapore: World Scientific) p51

    [11]

    ]Maniloff E S, Klimov V I, McBranch D W 1997 Phys. Rev. B 56 1876

    [12]

    ]Zaushitsyn Y, Gulbinas V, Zigmantas D, Zhang F L, Ingans O, Sundstrm V, Zartsev A 2004 Phys. Rev. B 70 075202

    [13]

    ]Shkunov M N, Huang J D, Vardeny Z V, Yoshino K 1999 Synth. Metals 102 1118

    [14]

    ]Li A Z, Chen Z F, Wang H, Zhang Y W, Zhang W, Yu H C, Huang J W, Ji L N 2009 Acta Phys. Sin. 58 1321 (in Chinese) [黎爱珍、陈志峰、王惠、张燕伟、张伟、余汉诚、黄锦汪、计亮年 2009 58 1321]

    [15]

    ]Yin S H, Liu J Y, Lou N Q 2006 J. At. Mol. Phys. 23 49 (in Chinese) [尹淑慧、刘建勇、楼南泉 2006 原子与分子 23 49]

    [16]

    ]Samuel I D W, Crystal B, Rumbles G, Burn P L, Holmes A B, Friend R F 1993 Chem. Phys. Lett. 213 472

    [17]

    ]Yan M, Rothberg L J, Papadimitrankopoulos F, Galvin M E, Miller T M 1993 Phys. Rev. Lett. 73 2827

    [18]

    ]Heeger A J 1997 Primary Photoexcitations in Conjugated Polymers: Molecular Exciton Versus Semiconductor Band Model (Singapore: World Scientific) p20

    [19]

    ]McBranch D W, Sinclair M B 1997 Primary Photoexcitations in Conjugated Polymers: Molecular Exciton Versus Semiconductor Band Model (Singapore: World Scientific) p587

    [20]

    ]Kepler R G, Valencia V S, Jacobs S J, McNamara J J 1996 Synth. Metals 78 227

    [21]

    ]Zhao E H, Fu R T, Sun X, Fu R L, Zhu J H 1998 Acta Phys. Sin. 47 2031 (in Chinese) [赵二海、傅荣堂、孙鑫、傅柔励、褚君浩 1998 47 2031]

    [22]

    ]Thomsen C, Strait J, Vardeny Z, Maris H J, Tauc J 1984 Phys. Rev. Lett. 53 989

    [23]

    ]Kanner G S, Vardeny Z V, Hess B C 1990 Phys. Rev. B 42 5403

    [24]

    ]Devos A, Robillard J F, Cte R 2006 Phys. Rev. B 74 064114

  • [1]

    [1]Mezyk J, Meinardi F, Cocchi M 2008 Appl. Phys. Lett. 93 093301

    [2]

    [2]Kalinowski J 2005 Organic Light Emitting Diodes: Principles, Characteristics, and Processes (New York: Marcel Dekker) p135

    [3]

    [3]Stampor W, Mezyk J 2007 Chem. Phys. 337 151

    [4]

    [4]Kalinowski J, Mezyk J, Meinardi F, Tubino R, Cocchi M, Virgili D 2005 J. Appl. Phys. 98 063532-1

    [5]

    [5]Holzer W, Penzkofer A, Tsuboi T 2005 Chem. Phys. 308 93

    [6]

    [6]Jiang H, Xu X H, Sun X, Fu R L, Chu J H 1999 Acta Phys. Sin. 48 2327 (in Chinese) [姜浩、徐晓华、孙鑫、傅柔励、褚君浩 1999 48 2327]

    [7]

    [7]Arkhipov V I, Bssler H, Deussen M, Gbel E O, Kersting R, Kurz H, Lemmer U, Mahrt R F 1995 Phys. Rev. B 52 4932

    [8]

    [8]Yang H, Zhang T Q, Wang S F, Gong Q H 2000 Acta Phys. Sin. 49 1292 (in Chinese) [杨宏、张铁桥、王树峰、龚旗煌 2000 49 1292]

    [9]

    [9]Gadermaier C, Grasse F, Perissinotto S, Graf M, Galbrecht F, Scherf U, List E J W, Lanzani G 2008 Phys. Rev. Lett. 100 057401

    [10]

    ]Bssler H 1997 Primary Photoexcitations in Conjugated Polymers: Molecular Exciton Versus Semiconductor Band Model (Singapore: World Scientific) p51

    [11]

    ]Maniloff E S, Klimov V I, McBranch D W 1997 Phys. Rev. B 56 1876

    [12]

    ]Zaushitsyn Y, Gulbinas V, Zigmantas D, Zhang F L, Ingans O, Sundstrm V, Zartsev A 2004 Phys. Rev. B 70 075202

    [13]

    ]Shkunov M N, Huang J D, Vardeny Z V, Yoshino K 1999 Synth. Metals 102 1118

    [14]

    ]Li A Z, Chen Z F, Wang H, Zhang Y W, Zhang W, Yu H C, Huang J W, Ji L N 2009 Acta Phys. Sin. 58 1321 (in Chinese) [黎爱珍、陈志峰、王惠、张燕伟、张伟、余汉诚、黄锦汪、计亮年 2009 58 1321]

    [15]

    ]Yin S H, Liu J Y, Lou N Q 2006 J. At. Mol. Phys. 23 49 (in Chinese) [尹淑慧、刘建勇、楼南泉 2006 原子与分子 23 49]

    [16]

    ]Samuel I D W, Crystal B, Rumbles G, Burn P L, Holmes A B, Friend R F 1993 Chem. Phys. Lett. 213 472

    [17]

    ]Yan M, Rothberg L J, Papadimitrankopoulos F, Galvin M E, Miller T M 1993 Phys. Rev. Lett. 73 2827

    [18]

    ]Heeger A J 1997 Primary Photoexcitations in Conjugated Polymers: Molecular Exciton Versus Semiconductor Band Model (Singapore: World Scientific) p20

    [19]

    ]McBranch D W, Sinclair M B 1997 Primary Photoexcitations in Conjugated Polymers: Molecular Exciton Versus Semiconductor Band Model (Singapore: World Scientific) p587

    [20]

    ]Kepler R G, Valencia V S, Jacobs S J, McNamara J J 1996 Synth. Metals 78 227

    [21]

    ]Zhao E H, Fu R T, Sun X, Fu R L, Zhu J H 1998 Acta Phys. Sin. 47 2031 (in Chinese) [赵二海、傅荣堂、孙鑫、傅柔励、褚君浩 1998 47 2031]

    [22]

    ]Thomsen C, Strait J, Vardeny Z, Maris H J, Tauc J 1984 Phys. Rev. Lett. 53 989

    [23]

    ]Kanner G S, Vardeny Z V, Hess B C 1990 Phys. Rev. B 42 5403

    [24]

    ]Devos A, Robillard J F, Cte R 2006 Phys. Rev. B 74 064114

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出版历程
  • 收稿日期:  2009-06-07
  • 修回日期:  2009-08-12
  • 刊出日期:  2010-02-05

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