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Based on the structure of strained Si/SiGe NMOSFET, a unified drain current model is presented in this paper. The model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a smoothing function, and guarantees the continuities of the drain current and its derivatives.Furthermore, the model accuracy is enhanced by including carrier velocity saturation and channel length modulation effects. Comparisons between the model and the measured data show that the drain current model can describe the device characteristics well. The proposed model is useful for the design and simulation of digital and analogy circuits made of strained Si.
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Keywords:
- strained Si NMOSFET /
- drain current /
- analytical modeling
[1] O’Neil A G, Antoniadis D A 1996 IEEE Trans. Electron Devices 43 911
[2] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[3] Bindu B, Nandita D G, Amitava D G 2006 Solid-State Electronics 5 448
[4] Kumar M J, Vivek V, Nawal S 2007 Proceedings of the 20th International Conference on VLSI Design Bangalore, India, January 6–10, 2007 p189
[5] Qin S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q, Shu Y 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒钰 2011 60 058501]
[6] Jakub Q, Bogdan M 2007 Journal of Telecommunications and Information Technology 3 84
[7] Qu J T, Zhang H M, Qing S S, Xu X B, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 098501 (in Chinese) [曲江涛, 张鹤鸣, 秦珊珊, 徐小波, 王晓艳, 胡辉勇 2011 60 098501]
[8] Arora N 2007 MOSFET Modeling for VLSI Simulation (Singapore: World Scientific Press) p12–68
[9] Kunihiro S 2000 IEEE Trans. Electron Devices 47 2372
[10] Kendall J D, Boothroyd A R 1986 IEEE Electron Devices Lett. 7 407
[11] Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, Su B, Wang B, Wang G Y 2013 Acta Phys. Sin. 62 077103 (in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 舒斌, 王斌, 王冠宇 2013 62 077103]
[12] Yannis T, Colin M 2011 Operation and Modeling of the MOS Transistor (3rd Ed.) (New York: Oxford University Press) p600–638
[13] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L L 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 62 057103]
[14] Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 077106 (in Chinese) [王冠宇, 张鹤鸣, 王晓艳, 吴铁峰, 王斌 2011 60 077106]
[15] Cheng Y H, Jeng M C, Liu Z H, Huang J H, Chen K, Ping K K, Hu C M 1997 IEEE Trans. Electron Devices 44 280
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[1] O’Neil A G, Antoniadis D A 1996 IEEE Trans. Electron Devices 43 911
[2] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[3] Bindu B, Nandita D G, Amitava D G 2006 Solid-State Electronics 5 448
[4] Kumar M J, Vivek V, Nawal S 2007 Proceedings of the 20th International Conference on VLSI Design Bangalore, India, January 6–10, 2007 p189
[5] Qin S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q, Shu Y 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒钰 2011 60 058501]
[6] Jakub Q, Bogdan M 2007 Journal of Telecommunications and Information Technology 3 84
[7] Qu J T, Zhang H M, Qing S S, Xu X B, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 098501 (in Chinese) [曲江涛, 张鹤鸣, 秦珊珊, 徐小波, 王晓艳, 胡辉勇 2011 60 098501]
[8] Arora N 2007 MOSFET Modeling for VLSI Simulation (Singapore: World Scientific Press) p12–68
[9] Kunihiro S 2000 IEEE Trans. Electron Devices 47 2372
[10] Kendall J D, Boothroyd A R 1986 IEEE Electron Devices Lett. 7 407
[11] Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, Su B, Wang B, Wang G Y 2013 Acta Phys. Sin. 62 077103 (in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 舒斌, 王斌, 王冠宇 2013 62 077103]
[12] Yannis T, Colin M 2011 Operation and Modeling of the MOS Transistor (3rd Ed.) (New York: Oxford University Press) p600–638
[13] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L L 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 62 057103]
[14] Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 077106 (in Chinese) [王冠宇, 张鹤鸣, 王晓艳, 吴铁峰, 王斌 2011 60 077106]
[15] Cheng Y H, Jeng M C, Liu Z H, Huang J H, Chen K, Ping K K, Hu C M 1997 IEEE Trans. Electron Devices 44 280
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