Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate

Wang Bin; Zhang He-Ming; Hu Hui-Yong; Zhang Yu-Ming; Song Jian-Jun; Zhou Chun-Yu; Li Yu-Chen

doi:10.7498/aps.62.218502

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Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen. Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gateJ. Acta Physica Sinica, 2013, 62(21): 218502. DOI: 10.7498/aps.62.218502

Citation:

Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen. Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gateJ. Acta Physica Sinica, 2013, 62(21): 218502. DOI: 10.7498/aps.62.218502

Citation:

Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen. Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gateJ. Acta Physica Sinica, 2013, 62(21): 218502. DOI: 10.7498/aps.62.218502