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An analytical model for the subthreshold current of fully depleted strained -SOI MOSFET was developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification was carried out using the 2D device simulator ISE. Good agreement was obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained Si layer strain, thickness and doping was studied. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.
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Keywords:
- strained-Si /
- FD-SOI MOSFET /
- surface voltage /
- subthreshold current
[1] Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[2] Hu H Y, Zhang H M, Dai X Y, Lü Y 2004 Chin. Phys. 12 295
[3] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[4] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[5] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. on Electron Devices 52 2207
[6] Lauer I, Langdo T A, Cheng Z Y, Fiorenza J G, Braithwaite G, Currie M T, Leitz C W, Lochtefeld A, Badawi H, Bulsara M T, Somerville M, Antoniadis D A 2004 IEEE EDL 25 83
[7] Chen C L, Langdo T A, Chen C K, Fiorenza J G, Wyatt P W, Currie M T, Leitz C W, Braithwaite G, Fritze M, Lambert R, Yost D R, Cheng Z, Lochtefeld A, Keast C K 2003 IEDM Tech. Dig. 311
[8] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Shieh S R, Duffy T S, Sturm J C 2003 IEDM Tech. Dig. 321
[9] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志峰、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 58 4948]
[10] S. M. SZ, Kwok K. NG 2008 Physics of Semiconductor Devices (Third Editon) (Xi'an:Xi'an Jiong University Press) p240 (in Chinese) [施 敏、伍国珏著、耿莉、张瑞智译 2008 半导体器件物理(第三版)(西安:西安交通大学出版社)第240页]
[11] Lim J S, Thompson S E, Fossum J G 2004 IEEE EDL 25 731
[12] Zhang W, Fossum J G 2005 IEEE ED 52 263
[13] Currie M T, Leitz C W, Langdo T A, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 J. Vac. Sci. Techno B 19 2268
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[1] Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[2] Hu H Y, Zhang H M, Dai X Y, Lü Y 2004 Chin. Phys. 12 295
[3] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[4] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[5] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. on Electron Devices 52 2207
[6] Lauer I, Langdo T A, Cheng Z Y, Fiorenza J G, Braithwaite G, Currie M T, Leitz C W, Lochtefeld A, Badawi H, Bulsara M T, Somerville M, Antoniadis D A 2004 IEEE EDL 25 83
[7] Chen C L, Langdo T A, Chen C K, Fiorenza J G, Wyatt P W, Currie M T, Leitz C W, Braithwaite G, Fritze M, Lambert R, Yost D R, Cheng Z, Lochtefeld A, Keast C K 2003 IEDM Tech. Dig. 311
[8] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Shieh S R, Duffy T S, Sturm J C 2003 IEDM Tech. Dig. 321
[9] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志峰、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 58 4948]
[10] S. M. SZ, Kwok K. NG 2008 Physics of Semiconductor Devices (Third Editon) (Xi'an:Xi'an Jiong University Press) p240 (in Chinese) [施 敏、伍国珏著、耿莉、张瑞智译 2008 半导体器件物理(第三版)(西安:西安交通大学出版社)第240页]
[11] Lim J S, Thompson S E, Fossum J G 2004 IEEE EDL 25 731
[12] Zhang W, Fossum J G 2005 IEEE ED 52 263
[13] Currie M T, Leitz C W, Langdo T A, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 J. Vac. Sci. Techno B 19 2268
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