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本文通过求解二维泊松方程,为应变Si 全耗SOI MOSFET建立了全耗尽条件下表面势模型,利用传统的漂移-扩散理论.在表面势模型的基础上,得到了应变Si 全耗SOI MOSFET的亚阈电流模型,并通过与二维器件数值模拟工具ISE的结果做比较,证明了所建立的模型的正确性.根据所建立的模型,分析了亚阈电流跟应变Si应变度的大小,应变Si膜的厚度和掺杂浓度的关系,为应变Si 全耗SOI MOSFET物理参数设计提供了重要参考.
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关键词:
- 应变硅 /
- FD-SOI MOSFET /
- 表面势 /
- 亚阈电流
An analytical model for the subthreshold current of fully depleted strained -SOI MOSFET was developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification was carried out using the 2D device simulator ISE. Good agreement was obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained Si layer strain, thickness and doping was studied. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.-
Keywords:
- strained-Si /
- FD-SOI MOSFET /
- surface voltage /
- subthreshold current
[1] Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[2] Hu H Y, Zhang H M, Dai X Y, Lü Y 2004 Chin. Phys. 12 295
[3] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[4] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
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[6] Lauer I, Langdo T A, Cheng Z Y, Fiorenza J G, Braithwaite G, Currie M T, Leitz C W, Lochtefeld A, Badawi H, Bulsara M T, Somerville M, Antoniadis D A 2004 IEEE EDL 25 83
[7] Chen C L, Langdo T A, Chen C K, Fiorenza J G, Wyatt P W, Currie M T, Leitz C W, Braithwaite G, Fritze M, Lambert R, Yost D R, Cheng Z, Lochtefeld A, Keast C K 2003 IEDM Tech. Dig. 311
[8] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Shieh S R, Duffy T S, Sturm J C 2003 IEDM Tech. Dig. 321
[9] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志峰、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 58 4948]
[10] S. M. SZ, Kwok K. NG 2008 Physics of Semiconductor Devices (Third Editon) (Xi'an:Xi'an Jiong University Press) p240 (in Chinese) [施 敏、伍国珏著、耿莉、张瑞智译 2008 半导体器件物理(第三版)(西安:西安交通大学出版社)第240页]
[11] Lim J S, Thompson S E, Fossum J G 2004 IEEE EDL 25 731
[12] Zhang W, Fossum J G 2005 IEEE ED 52 263
[13] Currie M T, Leitz C W, Langdo T A, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 J. Vac. Sci. Techno B 19 2268
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[1] Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[2] Hu H Y, Zhang H M, Dai X Y, Lü Y 2004 Chin. Phys. 12 295
[3] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[4] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[5] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. on Electron Devices 52 2207
[6] Lauer I, Langdo T A, Cheng Z Y, Fiorenza J G, Braithwaite G, Currie M T, Leitz C W, Lochtefeld A, Badawi H, Bulsara M T, Somerville M, Antoniadis D A 2004 IEEE EDL 25 83
[7] Chen C L, Langdo T A, Chen C K, Fiorenza J G, Wyatt P W, Currie M T, Leitz C W, Braithwaite G, Fritze M, Lambert R, Yost D R, Cheng Z, Lochtefeld A, Keast C K 2003 IEDM Tech. Dig. 311
[8] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Shieh S R, Duffy T S, Sturm J C 2003 IEDM Tech. Dig. 321
[9] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志峰、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 58 4948]
[10] S. M. SZ, Kwok K. NG 2008 Physics of Semiconductor Devices (Third Editon) (Xi'an:Xi'an Jiong University Press) p240 (in Chinese) [施 敏、伍国珏著、耿莉、张瑞智译 2008 半导体器件物理(第三版)(西安:西安交通大学出版社)第240页]
[11] Lim J S, Thompson S E, Fossum J G 2004 IEEE EDL 25 731
[12] Zhang W, Fossum J G 2005 IEEE ED 52 263
[13] Currie M T, Leitz C W, Langdo T A, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 J. Vac. Sci. Techno B 19 2268
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