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A new strained Si MOSFET structure with hetero-polycrystalline SiGe gate was studied, which combines the advantages of “gate engineering” and “strain engineering”. The new structure improved the carrier transport efficiency, suppressed the short-channel effects (SCE), and enhanced the performance on the basis of strain. Then a physically modeling strategy such as quasi-2D surface potential of strong inversion, threshold voltage, and channel current was presented for the strained Si NMOSFET. Finally, the above model was computed and the results were analyzed.
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Keywords:
- hetero-polycrystalline SiGe gate /
- strained Si NMOSFET /
- surface potential /
- channel current
[1] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 57 5918]
[2] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L Y 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 62 057013]
[3] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[4] Wang B, Zhang H M, Hu H Y, Zhang Y M, Zhou C Y, Wang G Y, Li Y C 2013 Chin. Phys. B 22 028503
[5] Long W, Ou H J, Kuo J M, Chin K K 1999 IEEE Trans. on Electron Devices 46 865
[6] Zhou X 2000 IEEE Trans. on Electron Devices 47 113
[7] Ponomarev Y V, Stolk P A 2000 IEEE Trans. on Electron Devices 47 848
[8] Afzali-Kusha A, Hashemi P, Behnam A, Fathi E, Nokalii M E 2005 Solid-State Electronics 49 1341
[9] Baishya S, Mallik A, Sarkar C K 2007 IEEE Trans. on Electron Devices 54 2520
[10] Samena R S, Kumar M J 2009 IEEE Trans. on Electron Devices 56 517
[11] Wong D M, Tarr N G 2000 Vac. Sci. Technol. A 18 783
[12] Li J, Liu H X, Yuan B, Cao L, Li B 2011 J. Semicond. 32 044005
[13] Nayfeh H M, Hoyt J L, Dimitri A A 2004 IEEE Trans. on Electron Devices 51 2069
[14] Price P J 1988 J. Appl. Phys. 63 4718
[15] Rim K, Hoyt J L, Gibbons J F 2000 IEEE Trans. on Electron Devices 47 1406
[16] Ismail K, Nelson S F 1993 Appl. Phys. Let. 63 660
[17] Roldán J B, Gámiz F, López V 1997 IEEE Trans. on Electron Devices 44 841
[18] Sehgal A, Mangla T, Gupta M, Gupta R S 2008 Thin Solid Films 516 2162
[19] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 58 4948]
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[1] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 57 5918]
[2] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L Y 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 62 057013]
[3] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[4] Wang B, Zhang H M, Hu H Y, Zhang Y M, Zhou C Y, Wang G Y, Li Y C 2013 Chin. Phys. B 22 028503
[5] Long W, Ou H J, Kuo J M, Chin K K 1999 IEEE Trans. on Electron Devices 46 865
[6] Zhou X 2000 IEEE Trans. on Electron Devices 47 113
[7] Ponomarev Y V, Stolk P A 2000 IEEE Trans. on Electron Devices 47 848
[8] Afzali-Kusha A, Hashemi P, Behnam A, Fathi E, Nokalii M E 2005 Solid-State Electronics 49 1341
[9] Baishya S, Mallik A, Sarkar C K 2007 IEEE Trans. on Electron Devices 54 2520
[10] Samena R S, Kumar M J 2009 IEEE Trans. on Electron Devices 56 517
[11] Wong D M, Tarr N G 2000 Vac. Sci. Technol. A 18 783
[12] Li J, Liu H X, Yuan B, Cao L, Li B 2011 J. Semicond. 32 044005
[13] Nayfeh H M, Hoyt J L, Dimitri A A 2004 IEEE Trans. on Electron Devices 51 2069
[14] Price P J 1988 J. Appl. Phys. 63 4718
[15] Rim K, Hoyt J L, Gibbons J F 2000 IEEE Trans. on Electron Devices 47 1406
[16] Ismail K, Nelson S F 1993 Appl. Phys. Let. 63 660
[17] Roldán J B, Gámiz F, López V 1997 IEEE Trans. on Electron Devices 44 841
[18] Sehgal A, Mangla T, Gupta M, Gupta R S 2008 Thin Solid Films 516 2162
[19] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 58 4948]
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