不同织构CVD金刚石膜的Hall效应特性

苏青峰; 刘长柱; 王林军; 夏义本

doi:10.7498/aps.64.117301

摘要

采用热丝化学气相沉积法在p型硅衬底上制备了不同织构的多晶金刚石膜，使用XRD表征了CVD金刚石膜的结构特征, 研究了退火后不同织构金刚石膜的电流特性, 使用Hall效应检测仪研究了金刚石膜的霍尔效应特性及随温度变化的规律, 结果表明所制备的金刚石膜是p型材料, 载流子浓度随着温度的降低而增加, 迁移率随着温度的降低而减小. 室温下[100]织构金刚石薄膜的载流子浓度和迁移率分别为4.3×104 cm-3和76.5 cm2/V·s.

关键词:

Abstract

Due to its smoothest surface, fewer defects, and better crystal quality, [100] textured diamond film is well suited for the application of optoelectronic and microelectronic devices. Carrier concentration and mobility are very important parameters of semiconductor materials. In order to further broadening the application of diamond films in optoelectronics and microelectronics, it is necessary to made a research on Hall effect characteristics of [100] textured and [111] textured films. In this paper, different textured polycrystalline diamond films are deposited on silicon substrates by hot filament chemical vapor deposition (HFCVD) method under different conditions. Microstructures of diamond films are characterized by X-ray diffraction (XRD). High quality [100] textured and [111] textured diamond films are obtained. Dark current-voltage (I-V) characteristics of different-oriented films after annealing are investigated at room temperature. The carrier concentration and mobility of diamond films are measured by Hall effect test system as the temperature changing from 100 to 500 K. Results indicate that the textures of diamond films affect the value of carrier mobility:carrier concentration increases and mobility decreases with the decrease of temperature; and the deposited films are of p-type materials. The carrier concentration and mobility of polycrystalline [100]-textured diamond films at room temperature are 4.3×104 cm-3 and 76.5 cm2/V·s, respectively.

Keywords:

作者及机构信息

1.
上海联孚新能源科技集团有限公司, 新能源研究院, 上海 201201;

2.
上海大学, 材料科学与工程学院, 上海 200444

基金项目: 国家自然科学基金(批准号:61176072)和上海市人才发展基金(批准号:201425)资助的课题.

Authors and contacts

1.
Institute of New Energy, Shanghai Lianfu New Energy S&T Group Co., Ltd, Shanghai 201201, China;

2.
School of Materials Science and Engineering Shanghai University, Shanghai 200444, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61176072), and the Shanghai Talent Development Fund, China (Grant No. 201425).

参考文献

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[18]	Ri S G, Takeuchi D, Kato H, Ogura M, Makino T, Yamasaki S, Okushi H, Rezek B, Nebel C E 2005 Appl. Phys. Lett. 87 262107
[19]	Isberg J, Gabrysch M, Majdi S, Twitchen D J 2012 Appl. Phys. Lett. 100 172103
[20]	Majdi S, Kovi K K, Hammersberg J, Issberg J 2013 Appl. Phys. Lett. 102 152113
[21]	Zhang X X, Shi T S, Wang J X, Zhang X K 1995 J. Cryst. Growth 155 66
[22]	Williams O A, Jackman R B, Nebel C, Foord J S 2003 Semicond. Sci. Technol. 18 S77
[23]	Sauerer C, Ertl F, Nebel C E, Stutzmann M, Bergonzo P, Willianms O A, Jackman R A 2001 Phys. Stat. Sol. A 186 241
[24]	Ristein J 2000 Diamond Relat. Mater. 9 1129
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施引文献

[1]	Zieliński A, Bogdanowicz R, Ryl J, Burczyk L, Darowicki K 2014 Appl. Phys. Lett. 105 131908
[2]	Chatterjee V, Harniman R, May P W, Barhai P K 2014 Appl. Phys. Lett. 104 171907
[3]	Zhuang C Q, Liu L 2015 Chin. Phys. B 24 018101
[4]	Zheng Y J, Huang G F, Li Z C, Zuo G H 2014 Chin. Phys. B 23 118102
[5]	Yang C, Wang X P, Wang L J, Pan X F, Li S K, Jing L W 2013 Chin. Phys. B 22 088101
[6]	Gu C Z, Wang Q, Li J J, Xia K 2013 Chin. Phys. B 22 098107
[7]	Wang R, Hu X J 2014 Acta Phys. Sin. 63 148102 (in Chinese) [王锐, 胡晓君 2014 63 148102]
[8]	Zhou Z X Jia X P, Li Y Yan B M, Wang F B Fang C Chen N Li Y D Ma H A 2014 Acta Phys. Sin. 63 248104 (in Chinese) [周振翔, 贾晓鹏, 李勇, 颜丙敏, 王方标, 房超, 陈宁, 李亚东, 马红安 2014 63 248104]
[9]	Su Q F, Liu J M, Wang L J, Shi W M, Xia Y B 2006 Acta Phys. Sin. 55 5145 (in Chinese) [苏青峰, 刘健敏, 王林军, 史伟民, 夏义本 2006 55 5145]
[10]	Xia Y B, Sekiguchi T, Zhang W J, Jiang X, Wu W H, Yao T 2000 J. Cryst. Growth 213 328
[11]	Tang C J, Fernandes A J S, Jiang X F, Pinto J L 2012 Diamond Relat. Mater. 24 93
[12]	Thanry M A P, Berini B, Stenger I, Chikoiolze E, Lusson A, Jomard F, Chevallier J, Barjon J 2012 Appl. Phys. Lett. 100 192109
[13]	Kato H, Yamasaki S, Okushi H 2005 Appl. Phys. Lett. 86 222111
[14]	Zhu L L 2015 Chin. Phys. B 24 016201
[15]	Zhang H, Yang S Y, Liu G P, Wang J X, Jin D D, Li H J, Liu X L, Zhu Q S, Wang Z G 2014 Chin. Phys. B 23 017305
[16]	Zeng L, Xin Z, Chen S W, Du G, Kang J F, Liu X Y 2014 Chin. Phys. Lett. 31 027301
[17]	Williams O A, Curat S, Gerb J E, Gruen D M, Jackman R B 2004 Appl. Phys. Lett. 85 1680
[18]	Ri S G, Takeuchi D, Kato H, Ogura M, Makino T, Yamasaki S, Okushi H, Rezek B, Nebel C E 2005 Appl. Phys. Lett. 87 262107
[19]	Isberg J, Gabrysch M, Majdi S, Twitchen D J 2012 Appl. Phys. Lett. 100 172103
[20]	Majdi S, Kovi K K, Hammersberg J, Issberg J 2013 Appl. Phys. Lett. 102 152113
[21]	Zhang X X, Shi T S, Wang J X, Zhang X K 1995 J. Cryst. Growth 155 66
[22]	Williams O A, Jackman R B, Nebel C, Foord J S 2003 Semicond. Sci. Technol. 18 S77
[23]	Sauerer C, Ertl F, Nebel C E, Stutzmann M, Bergonzo P, Willianms O A, Jackman R A 2001 Phys. Stat. Sol. A 186 241
[24]	Ristein J 2000 Diamond Relat. Mater. 9 1129
[25]	Mott N F, Twose T D 1961 Adv. Phys. 10 107
[26]	Look D C, Molnar R J 1997 Appl. Phys. Lett. 70 3377
[27]	Williams O A, Jackman R B, Nebel C, Foord J S 2002 Diamond Relat. Mater. 11 396
[28]	Jiang N, Ito T 1999 J. Appl. Phys. 85 8267
[29]	Looi H J, Jackman R B, Foord J S 1998 Appl. Phys. Lett. 72 353

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