Effect of high-energy electron exposure on the charge states of defects in diamond

Tian Yu-Ming; Wang Kai-Yue; Li Zhi-Hong; Zhu Yu-Mei; Chai Yue-Sheng; Zeng Yu-Shun; Wang Qiang

doi:10.7498/aps.62.188101

Abstract

A great number of point defects are created in diamond by electron irradiation, most of which are charged. In this paper, we come up with an interesting thought to determine the charge states of these defects in diamond. The irradiated regions are exposed by high-energy electrons with a scanning electron microscopy (SEM), and then are characterized by the low temperature micro-photoluminescence (PL) technology. Some evidences to determine the charge states of defects are obtained by comparing the PL spectra between the cases with and without SEM exposure.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, China;
2.
Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China
Funds: Project supported by the Doctoral Initiating Project (Grant No. 20122044) and the Undergraduate Innovation Training Project of Taiyuan University of Science and Technology, China (Grant No. xj2013065).

References

[1]	Wang K Y, Li Z H, Gao K, Zhu Y M 2012 Acta Phys. Sin. 61 097803 (in Chinese) [王凯悦，李志宏，高凯，朱玉梅 2012 61 097803]
[2]	Dai Y, Dai D, Yan C, Huang B, Han S 2005 Phys. Rev. B 71 075421
[3]	Dai Y, Zhang A, Han S 2004 Int. J. Nanosci. 3 455
[4]	Steeds J W, Charles S J, Davis T J, Griffin I 2000 Diamond Relat. Mater. 9 397
[5]	Manson N B, Harrison J P 2005 Diamond Relat. Mater. 14 1705
[6]	Grotz B, Hauf M V, Dankerl M, Naydenov B, Pezzagna S, Meijer J, Jelezko F, Wrachtrup J, Stutzmann M, Reinhard F, Garrido J A 2012 Nature Communications 3 729
[7]	Reimer L 2000 Meas. Sci. Technol. 11 1826
[8]	Wotherspoon A, Steeds J W, Coleman P, Wolverson D, Davies J, Lawson S, Butler J 2002 Diamond Relat. Mater. 11 692
[9]	Wang K, Steeds J, Li Z 2012 Diamond Relat. Mater. 25 29
[10]	Steeds J, Wang K, Li Z 2012 Diamond Relat. Mater. 23 154
[11]	Steeds J W, Davis T J, Charles S J, Hayes J M, Butler J E 1999 Diamond Relat. Mater. 8 1947
[12]	Vlasov I I, Khmelnitskii R A, Khomich A V, Ralchenko V G, Wenseleers W, Goovaerts E 2003 Phys. Status Solidi (A) 199 103
[13]	Steeds J W, Charles S J, Davies T J, Gilmore A, Hayes J, Pickard D, Butler J E 1999 Diamond Relat. Mater. 8 94
[14]	Wang K Y 2012 Ph. D. Dissertation (Tianjin: Tianjin University) (in Chinese) [王凯悦 2012 博士学位论文 (天津：天津大学)]
[15]	Collins A T, Rafique S 1979 Proceedings of the Royal Society of London A 367 81
[16]	Wang K, Steeds J, Li Z 2012 Diamond Relat. Mater. 23 162
[17]	Collins A T, Dahwich A 2004 Diamond Relat. Mater. 13 1959
[18]	Wang K Y, Li Z H, Zhang B, Zhu Y M 2012 Acta Phys. Sin. 61 127804 (in Chinese) [王凯悦, 李志宏, 张博, 朱玉梅 2012 61 127804]

Cited By

[1]	Wang K Y, Li Z H, Gao K, Zhu Y M 2012 Acta Phys. Sin. 61 097803 (in Chinese) [王凯悦，李志宏，高凯，朱玉梅 2012 61 097803]
[2]	Dai Y, Dai D, Yan C, Huang B, Han S 2005 Phys. Rev. B 71 075421
[3]	Dai Y, Zhang A, Han S 2004 Int. J. Nanosci. 3 455
[4]	Steeds J W, Charles S J, Davis T J, Griffin I 2000 Diamond Relat. Mater. 9 397
[5]	Manson N B, Harrison J P 2005 Diamond Relat. Mater. 14 1705
[6]	Grotz B, Hauf M V, Dankerl M, Naydenov B, Pezzagna S, Meijer J, Jelezko F, Wrachtrup J, Stutzmann M, Reinhard F, Garrido J A 2012 Nature Communications 3 729
[7]	Reimer L 2000 Meas. Sci. Technol. 11 1826
[8]	Wotherspoon A, Steeds J W, Coleman P, Wolverson D, Davies J, Lawson S, Butler J 2002 Diamond Relat. Mater. 11 692
[9]	Wang K, Steeds J, Li Z 2012 Diamond Relat. Mater. 25 29
[10]	Steeds J, Wang K, Li Z 2012 Diamond Relat. Mater. 23 154
[11]	Steeds J W, Davis T J, Charles S J, Hayes J M, Butler J E 1999 Diamond Relat. Mater. 8 1947
[12]	Vlasov I I, Khmelnitskii R A, Khomich A V, Ralchenko V G, Wenseleers W, Goovaerts E 2003 Phys. Status Solidi (A) 199 103
[13]	Steeds J W, Charles S J, Davies T J, Gilmore A, Hayes J, Pickard D, Butler J E 1999 Diamond Relat. Mater. 8 94
[14]	Wang K Y 2012 Ph. D. Dissertation (Tianjin: Tianjin University) (in Chinese) [王凯悦 2012 博士学位论文 (天津：天津大学)]
[15]	Collins A T, Rafique S 1979 Proceedings of the Royal Society of London A 367 81
[16]	Wang K, Steeds J, Li Z 2012 Diamond Relat. Mater. 23 162
[17]	Collins A T, Dahwich A 2004 Diamond Relat. Mater. 13 1959
[18]	Wang K Y, Li Z H, Zhang B, Zhu Y M 2012 Acta Phys. Sin. 61 127804 (in Chinese) [王凯悦, 李志宏, 张博, 朱玉梅 2012 61 127804]

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Catalog

Vol. 62, Issue 18 - 2013-09-20

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