Modeling of carbon nanotube field effect transistor with phonon scattering

Zhao Xiao-Hui; Cai Li; Zhang Peng

doi:10.7498/aps.62.100301

Abstract

Phonon scattering has a non-negligible influence on the characteristics of carbon nanotube field effect transistor (CNTFET). Using the ballistic transport model, the device parameters under phonon scattering are analyzed, and then the CNTFET phonon scattering model is established. To reduce the complexity of this model so that simulation speed can be improved, the effects of phonon scattering is studied through analyzing chirality, temperature and energy, and therefore a new CNTFET phonon scattering model is established with linear approximation. By analyzing the scattering current changes, correctness and validity of the model are demonstrated. The proposed model is easier for calculation and has less computational complexity compared with semi-classical scattering model.

Keywords:

carbon nanotube field effect transistors /
phonon scattering model /
linear approximation

Authors and contacts

1.
The Sciences Institute of Air Force Engineering University, Xi’an 710051, China;
2.
The Engineering Institute of Air Force Engineering University, Xi'an 710038, China
Funds: Project supported by the Key Program of Shaanxi Provincial Nature Science for Basic Research, China (Grant No. 2011JZ015) and Research Fund of Shaanxi Key Laboratory of Electronic Information System Integration, China (Grant No. 201115Y15).

References

[1]	Tans S J, Verschueren A R M, Dekker C 1998 Nature 393 49
[2]	Zhou H L, Chi Y Q, Zhang M X, Fang L 2010 Acta Phys. Sin. 59 8104 (in Chinese) [周海亮, 池雅庆, 张民选, 方粮2010 59 8104]
[3]	Li P J, Zhang W J, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 1054 (in Chinese) [李萍剑, 张文静, 张琦锋, 吴锦雷 2007 56 1054]
[4]	Deng J, Wong H S P 2007 IEEE Trans. Electron Dev. 54 3186
[5]	Zhou X J, Park J Y, Huang S M, Liu J, McEuen P L 2005 Phys. Rev. Lett. 95 146805
[6]	Dresselhaus M S, Eklund P C 2000 Adv. Phys. 49 705
[7]	Fregonese S, Goguet J, Maneux C, Zimmer T 2009 IEEE Trans. Electron Dev. 56 1184
[8]	Guo J, Lundstrom M S 2005 Appl. Phys. Lett. 86 193103
[9]	Honincthun H C, Retailleau S G 2005 Appl. Phys. Lett. 87 1112
[10]	Koswatta S O, Hasan S, Lundstrom M S, Anantram M P, Nikonov D E 2007 IEEE Trans. Electron Dev. 54 2339

Cited By

[1]	Tans S J, Verschueren A R M, Dekker C 1998 Nature 393 49
[2]	Zhou H L, Chi Y Q, Zhang M X, Fang L 2010 Acta Phys. Sin. 59 8104 (in Chinese) [周海亮, 池雅庆, 张民选, 方粮2010 59 8104]
[3]	Li P J, Zhang W J, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 1054 (in Chinese) [李萍剑, 张文静, 张琦锋, 吴锦雷 2007 56 1054]
[4]	Deng J, Wong H S P 2007 IEEE Trans. Electron Dev. 54 3186
[5]	Zhou X J, Park J Y, Huang S M, Liu J, McEuen P L 2005 Phys. Rev. Lett. 95 146805
[6]	Dresselhaus M S, Eklund P C 2000 Adv. Phys. 49 705
[7]	Fregonese S, Goguet J, Maneux C, Zimmer T 2009 IEEE Trans. Electron Dev. 56 1184
[8]	Guo J, Lundstrom M S 2005 Appl. Phys. Lett. 86 193103
[9]	Honincthun H C, Retailleau S G 2005 Appl. Phys. Lett. 87 1112
[10]	Koswatta S O, Hasan S, Lundstrom M S, Anantram M P, Nikonov D E 2007 IEEE Trans. Electron Dev. 54 2339

[1]	Liu Zi-Yi, Chu Fu-Qiang, Wei Jun-Jun, Feng Yan-Hui. Interface thermal conductance and phonon thermal transport characteristics of diamond/carbon nanotube interface. Acta Physica Sinica, 2024, 73(13): 138102. doi: 10.7498/aps.73.20240323
[2]	Sun Yue, Qu Bin, Quan Bao-Gang. Nonlinear absorption, nonlinear scattering, and optical limiting properties of carbon nanotube/molybdenum diselenide organic glass. Acta Physica Sinica, 2018, 67(23): 236201. doi: 10.7498/aps.67.20181583
[3]	Zhang Jing-Shui, Kong Ling-Qin, Dong Li-Quan, Liu Ming, Zuo Jian, Zhang Cun-Lin, Zhao Yue-Jin. Diffusion part in terahertz complementary metal oxide semiconductor transistor detector model. Acta Physica Sinica, 2017, 66(12): 127302. doi: 10.7498/aps.66.127302
[4]	Li Yang, Song Yong-Shun, Li Ming, Zhou Xin. Simulation studies on the diffusion of water solitons in carbon nanotube. Acta Physica Sinica, 2016, 65(14): 140202. doi: 10.7498/aps.65.140202
[5]	Zhao Xiao-Hui, Cai Li, Zhang Peng. A HSPICE model of carbon nanotube field effect transistor. Acta Physica Sinica, 2013, 62(13): 130506. doi: 10.7498/aps.62.130506
[6]	Li Li, Liu Hong-Xia, Yang Zhao-Nian. Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica, 2012, 61(16): 166101. doi: 10.7498/aps.61.166101
[7]	Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica, 2012, 61(10): 107803. doi: 10.7498/aps.61.107803
[8]	Zhou Hai-Liang, Zhang Min-Xuan, Fang Liang. Dual-gate-material-based device design for unipolar metal oxide semiconductor-like carbon nanotube field effect transistors. Acta Physica Sinica, 2010, 59(7): 5010-5017. doi: 10.7498/aps.59.5010
[9]	Zhou Hai-Liang, Chi Ya-Qing, Zhang Min-Xuan, Fang Liang. Performance optimization of carbon nanotube field effect transistors based on stair-case doping strategy. Acta Physica Sinica, 2010, 59(11): 8104-8112. doi: 10.7498/aps.59.8104
[10]	Liu Hong, Yin Hai-Jian, Xia Shu-Ning. Electrical properties of the deformed carbon nanotube field-effect transistors. Acta Physica Sinica, 2009, 58(12): 8489-8500. doi: 10.7498/aps.58.8489
[11]	Wu Yan-Zhao, Xie Ning, Liu Jian-Jing, Jiao Yong-Fang. Phonon spectra and specific heat calculation of single wall carbon nanotube. Acta Physica Sinica, 2009, 58(11): 7787-7791. doi: 10.7498/aps.58.7787
[12]	Zhang Zhong-Qiang, Zhang Hong-Wu, Wang Lei, Zheng Yong-Gang, Wang Jin-Bao. Pressure control model for transport of liquid mercury in carbon nanotubes. Acta Physica Sinica, 2008, 57(2): 1019-1024. doi: 10.7498/aps.57.1019
[13]	Yao Xiao-Hu, Han Qiang, Xin Hao. Numerical simulation of nonlinear mechanical behaviour of single-walled carbon nanotubes. Acta Physica Sinica, 2008, 57(1): 329-338. doi: 10.7498/aps.57.329
[14]	Zhang Hong-Wu, Wang Jin-Bao, Ye Hong-Fei, Wang Lei. Generalized parametric constitutive law for van der Waals force simulation and its applications in computation of nanotubes. Acta Physica Sinica, 2007, 56(3): 1422-1428. doi: 10.7498/aps.56.1422
[15]	Li Ping-Jian, Zhang Wen-Jing, Zhang Qi-Feng, Wu Jin-Lei. Nanoelectronic logic circuits with carbon nanotube transistors. Acta Physica Sinica, 2007, 56(2): 1054-1060. doi: 10.7498/aps.56.1054
[16]	Li Ping-Jian, Zhang Wen-Jing, Zhang Qi-Feng, Wu Jin-Lei. The influence of contact metal in carbon nanotube transistor. Acta Physica Sinica, 2006, 55(10): 5460-5465. doi: 10.7498/aps.55.5460
[17]	Wu Yan-Zhao, Yu Ping, Wang Yu-Fang, Jin Qing-Hua, Ding Da-Tong, Lan Guo-Xiang. Baman scattering intensity of single-wall carbon nanotubes. Acta Physica Sinica, 2005, 54(11): 5262-5268. doi: 10.7498/aps.54.5262
[18]	Zhang Hui-Peng, Jin Qing-Hua, Wang Yu-Fang, Li Bao-Hui, Ding Da-Tong. Effect of single-wall carbon nanotubes’chiral angle for the phonon frequency. Acta Physica Sinica, 2005, 54(9): 4279-4284. doi: 10.7498/aps.54.4279
[19]	Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming. Trapping effect modeling for SiC power MESFETs. Acta Physica Sinica, 2003, 52(2): 302-306. doi: 10.7498/aps.52.302
[20]	LEI XIAO-LIN, TING CHIN-SEN. EFFECT OF COMBINED ACOUSTIC AND OPTICAL PHONON SCATTERING IN NONLINEAR ELECTRONIC TRANSPORT. Acta Physica Sinica, 1985, 34(8): 983-991. doi: 10.7498/aps.34.983

Catalog

Vol. 62, Issue 10 - 2013-05-20

Metrics

Abstract views: 6617
PDF Downloads: 517
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板