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The single isolate vacancy in diamond exists in three charged states, neutral, negative and positive; and many complicated defects such as di-vacancies, impurities-vacancy complexes could also be formed in diamond. In this paper, we investigate the optical properties of the irradiation-induced neutral vacancy in diamond by low-temperature micro-photoluminescence technology, which will play a guiding significant role in the further studies of the complex defects in diamond.
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Keywords:
- diamond /
- neutral vacancy /
- GR1 centre
[1] Wang K Y, Li Z H, Gao K, Zhu Y M 2012 Acta Phys. Sin. 61 097803 (in Chinese) [王凯悦, 李志宏, 高凯, 朱玉梅 2012 61 097803]
[2] Wang K Y 2012 Ph. D. Dissertation (Tianjin: Tianjin University) (in Chinese) [王凯悦 2012 博士学位论文(天津: 天津大学)]
[3] Mainwood A, Stoneham A M 1997 J. Phys.: Condens. Matter 9 2453
[4] Clark C D, Ditchburn R W, Dyer H B 1956 Proc. Royal Soc. A 234 363
[5] Fuchs G D, Dobrovitski V V, Toyli D M, Heremans F J, Weis C D, Schenkel T, Awschalom D 2010 Nature Phys. 6 668
[6] Abtew T A, Sun Y Y, Shih B C, Dev P, Zhang S B, Zhang P 2011 Phys. Rev. Lett. 107 146403
[7] Allers L, Collins A T, Hiscock J 1998 Diamond Relat. Mater. 7 228
[8] Davies G, Collins A T 1993 Diamond Relat. Mater. 2 80
[9] Kohn W 1954 Phys. Rev. A 94 1409
[10] Bourgoin J C, Lannoo M 1981 In Point Defects in Semiconductors (Vol. 1) (Berlin: Springer)
[11] Charles S J, Steeds J W, Bulter J E, Evans D J F 2003 J. Appl. Phys. 94 3091
[12] Wang K Y, Li Z H, Zhang B, Zhu Y M 2012 Acta Phys. Sin. 61 127804 (in Chinese) [王凯悦, 李志宏, 张博, 朱玉梅 2012 61 127804]
[13] Walker J 1979 Rep. Prog. Phys. 42 1605
[14] Davies G, Campbell B, Mainwood A, Newton M, Wartkins M, Kanda H, Anthony T R 2001 Phys. Status Solidi (A) 186 187
[15] Wang K Y, Steeds J, Li Z H 2012 Diamond Relat. Mater. 25 29
[16] Steeds J W, Sullivan W, Wotherspoon A, Hayes J M 2009 J. Phys.: Condens. Matter 21 364219
[17] Steeds J W, Charles S J, Davis T J, Griffin I 2000 Diamond Relat. Mater. 9 397
[18] Davies G, Nazaré M H, Hamer M F 1976 Proc. Royal Soc. London A 351 245
[19] van Wyk J A 1982 J. Phys. C: Solid State Phys. 15 L981
[20] Mainwood A 1999 Diamond Relat. Mater. 8 1560
[21] Davies G, Manson N B 1994 EMIS Data Reviews Series No 9 by Davies G ed. (London: INSPEC) Chapter 5.3 159
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[1] Wang K Y, Li Z H, Gao K, Zhu Y M 2012 Acta Phys. Sin. 61 097803 (in Chinese) [王凯悦, 李志宏, 高凯, 朱玉梅 2012 61 097803]
[2] Wang K Y 2012 Ph. D. Dissertation (Tianjin: Tianjin University) (in Chinese) [王凯悦 2012 博士学位论文(天津: 天津大学)]
[3] Mainwood A, Stoneham A M 1997 J. Phys.: Condens. Matter 9 2453
[4] Clark C D, Ditchburn R W, Dyer H B 1956 Proc. Royal Soc. A 234 363
[5] Fuchs G D, Dobrovitski V V, Toyli D M, Heremans F J, Weis C D, Schenkel T, Awschalom D 2010 Nature Phys. 6 668
[6] Abtew T A, Sun Y Y, Shih B C, Dev P, Zhang S B, Zhang P 2011 Phys. Rev. Lett. 107 146403
[7] Allers L, Collins A T, Hiscock J 1998 Diamond Relat. Mater. 7 228
[8] Davies G, Collins A T 1993 Diamond Relat. Mater. 2 80
[9] Kohn W 1954 Phys. Rev. A 94 1409
[10] Bourgoin J C, Lannoo M 1981 In Point Defects in Semiconductors (Vol. 1) (Berlin: Springer)
[11] Charles S J, Steeds J W, Bulter J E, Evans D J F 2003 J. Appl. Phys. 94 3091
[12] Wang K Y, Li Z H, Zhang B, Zhu Y M 2012 Acta Phys. Sin. 61 127804 (in Chinese) [王凯悦, 李志宏, 张博, 朱玉梅 2012 61 127804]
[13] Walker J 1979 Rep. Prog. Phys. 42 1605
[14] Davies G, Campbell B, Mainwood A, Newton M, Wartkins M, Kanda H, Anthony T R 2001 Phys. Status Solidi (A) 186 187
[15] Wang K Y, Steeds J, Li Z H 2012 Diamond Relat. Mater. 25 29
[16] Steeds J W, Sullivan W, Wotherspoon A, Hayes J M 2009 J. Phys.: Condens. Matter 21 364219
[17] Steeds J W, Charles S J, Davis T J, Griffin I 2000 Diamond Relat. Mater. 9 397
[18] Davies G, Nazaré M H, Hamer M F 1976 Proc. Royal Soc. London A 351 245
[19] van Wyk J A 1982 J. Phys. C: Solid State Phys. 15 L981
[20] Mainwood A 1999 Diamond Relat. Mater. 8 1560
[21] Davies G, Manson N B 1994 EMIS Data Reviews Series No 9 by Davies G ed. (London: INSPEC) Chapter 5.3 159
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