Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Characterization of typical infrared characteristic peaks of hydrogen in nitrogen and hydrogen co-doped diamond crystals

Yan Bing-Min Jia Xiao-Peng Qin Jie-Ming Sun Shi-Shuai Zhou Zhen-Xiang Fang Chao Ma Hong-An

Citation:

Characterization of typical infrared characteristic peaks of hydrogen in nitrogen and hydrogen co-doped diamond crystals

Yan Bing-Min, Jia Xiao-Peng, Qin Jie-Ming, Sun Shi-Shuai, Zhou Zhen-Xiang, Fang Chao, Ma Hong-An
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • The 3107 cm-1 peak is observed in the infrared absorption spectra of all types of Ia diamonds, but it has not been observed in the iron-based catalyst. A series of nitrogen and hydrogen-doped diamond crystals is successfully synthesized using P3N5 as the nitrogen source in a catalyst-carbon system at a lower pressure and temperature (6.3 GPa, 1500 ℃). Fourier transform infrared micro-spectroscopy reveals that the hydrogen atoms existing in the synthesized diamond are in two forms. The one is attributed to the CH bond stretching (3107 cm-1) and bending (1405 cm-1) vibrations of the vinylidene group (C=CH2). The other is due to sp3 hybridization CH bond symmetric (2850 cm-1) and anti-symmetric (2920 cm-1) vibrations. According to our result, we find that the 3107 cm-1 hydrogen absorption peak is related to the aggregated nitrogen in synthetic diamond. The 3107 cm-1 peak could not be observed in synthetic diamond without aggregated nitrogen, even if it has a high nitrogen concentration. And the hydrogen absorption peaks at 2920 and 2850 cm-1 are more widespread than the absorption peak at 3107 cm-1, this suggests that the sp3 CH bond more widely exists in diamond than the vinylidene group (C=CH2). Infrared spectra analysis indicates that the hydrogen impurity mainly exists in the natural diamond as vinylidene group as seen from the absorption peak intensity. We believe that our results provide a new way to study the formation mechanism of the natural diamond. Moreover, the ideal synthesis condition in our system supplies a possible way for us to design n-type diamond semiconductor.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51172089).
    [1]

    Kim Y D, Choi W, Wakimoto H, Usami S, Tomokage H, Ando T 1999 Appl. Phys. Lett. 75 3219

    [2]

    Zhang W J, Wu Y, Wong W K, Meng X M, Chan C Y, Bello I, Lifshitz Y, Lee S T 2003 Appl. Phys. Lett. 83 3365

    [3]

    Wang J, Chen G, Chatrathi M P, Fujishima A, Tryk D A, Shin D 2003 Anal. Chem. 75 935

    [4]

    Shin D, Sarada B V, Tryk D A, Fujishima A, Wang J 2003 Anal. Chem. 75 530

    [5]

    Hu M H, Ma H A, Yan B M, Zhang Z F, Li Y, Zhou Z X, Qin J M, Jia X P 2012 Acta Phys. Sin. 61 078102 (in Chinese) [胡美华, 马红安, 颜丙敏, 张壮飞, 李勇, 周振翔, 秦杰明, 贾晓鹏 2012 61 078102]

    [6]

    Koizumi S, Watanabe K, Hasegawa M, Kanda H 2001 Science 292 1899

    [7]

    Yu B D, Miyamoto Y, Sugino O 2000 Appl. Phys. Lett. 76 976

    [8]

    Polyakov V I, Rukovishnikov A I, Rossukanyi N M, Ralchenko V G 2001 Diam. Relat. Mater. 10 593

    [9]

    Zhang Z F, Jia X P, Liu X B, Hu M H, Li Y, Yan B M, Ma H A 2012 Chin. Phys. B 21 038103

    [10]

    Liang Z Z, Kanda H, Jia X P, Ma H A, Zhu P W, Guan Q F, Zang C Y 2006 Carbon 44 913

    [11]

    Chrenko R M, McDonald R S, Darrow K A 1967 Nature 213 474

    [12]

    Runciman W A, Carter T 1971 Solid St. Commun. 9 315

    [13]

    Woods G S, Collins A T 1983 J. Phys. Chem. Solids 44 471

    [14]

    Palyanov Y N, Kupriyanov I N, Borzdov Y M, Sokol A G, Khonkhryakov A F 2009 Cryst. Growth. Des. 9 2922

    [15]

    Meng Y F Yan C S, Lai J, Krasnicki S, Shu H Y, Yu T, Liang Q, Mao H K, Hemley R J 2008 Proc. Natl. Acad. Sci. USA 105 17620

    [16]

    Charles S J, Butler J E, Feygelson B N, Newton M E, Carroll D I, Steeds J W, Darwish H, Yan C S, Mao H K, Hemley R J 2004 Phys. Status Solidi A 201 2473

    [17]

    Borzdov Y, Pal'yanov Y, Kupriyanov I, Gusev V, Khokhryakov A, Sokol A, Efremov A 2002 Diam. Relat. Mater. 11 1863

    [18]

    Kiflawi I, Fisher D, Kanda H, Sittas G 1996 Diam. Relat. Mater. 5 1516

    [19]

    Zhang Z F, Jia X P, Sun S S, Liu X B, Li Y, Yan B M, Ma H A 2013 Int. J. Refractory Metals Hard Mater. 38 111

    [20]

    Li Y, Jia X P, Hu M H, Liu X B, Yan B M, Zhou Z X, Zhang Z F, Ma H A 2012 Chin. Phys. B 21 058101

    [21]

    Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Bex P 2002 J. Phys. Condens. Matter 14 11269

    [22]

    Coudberg P, Catherine Y 1987 Thin Solid Films 146 93

    [23]

    McNamara K M, Williams B E, Gleason K K, Scruggs B E 1994 J. Appl. Phys. 76 2466

    [24]

    Field J E 1992 The Properties of Natural and Synthetic Diamond (London: Academic) pp36-41, 81-179

    [25]

    Kanda H, Akaishi M Yamaoka S 1999 Diam. Relat. Mater. 8 1441

  • [1]

    Kim Y D, Choi W, Wakimoto H, Usami S, Tomokage H, Ando T 1999 Appl. Phys. Lett. 75 3219

    [2]

    Zhang W J, Wu Y, Wong W K, Meng X M, Chan C Y, Bello I, Lifshitz Y, Lee S T 2003 Appl. Phys. Lett. 83 3365

    [3]

    Wang J, Chen G, Chatrathi M P, Fujishima A, Tryk D A, Shin D 2003 Anal. Chem. 75 935

    [4]

    Shin D, Sarada B V, Tryk D A, Fujishima A, Wang J 2003 Anal. Chem. 75 530

    [5]

    Hu M H, Ma H A, Yan B M, Zhang Z F, Li Y, Zhou Z X, Qin J M, Jia X P 2012 Acta Phys. Sin. 61 078102 (in Chinese) [胡美华, 马红安, 颜丙敏, 张壮飞, 李勇, 周振翔, 秦杰明, 贾晓鹏 2012 61 078102]

    [6]

    Koizumi S, Watanabe K, Hasegawa M, Kanda H 2001 Science 292 1899

    [7]

    Yu B D, Miyamoto Y, Sugino O 2000 Appl. Phys. Lett. 76 976

    [8]

    Polyakov V I, Rukovishnikov A I, Rossukanyi N M, Ralchenko V G 2001 Diam. Relat. Mater. 10 593

    [9]

    Zhang Z F, Jia X P, Liu X B, Hu M H, Li Y, Yan B M, Ma H A 2012 Chin. Phys. B 21 038103

    [10]

    Liang Z Z, Kanda H, Jia X P, Ma H A, Zhu P W, Guan Q F, Zang C Y 2006 Carbon 44 913

    [11]

    Chrenko R M, McDonald R S, Darrow K A 1967 Nature 213 474

    [12]

    Runciman W A, Carter T 1971 Solid St. Commun. 9 315

    [13]

    Woods G S, Collins A T 1983 J. Phys. Chem. Solids 44 471

    [14]

    Palyanov Y N, Kupriyanov I N, Borzdov Y M, Sokol A G, Khonkhryakov A F 2009 Cryst. Growth. Des. 9 2922

    [15]

    Meng Y F Yan C S, Lai J, Krasnicki S, Shu H Y, Yu T, Liang Q, Mao H K, Hemley R J 2008 Proc. Natl. Acad. Sci. USA 105 17620

    [16]

    Charles S J, Butler J E, Feygelson B N, Newton M E, Carroll D I, Steeds J W, Darwish H, Yan C S, Mao H K, Hemley R J 2004 Phys. Status Solidi A 201 2473

    [17]

    Borzdov Y, Pal'yanov Y, Kupriyanov I, Gusev V, Khokhryakov A, Sokol A, Efremov A 2002 Diam. Relat. Mater. 11 1863

    [18]

    Kiflawi I, Fisher D, Kanda H, Sittas G 1996 Diam. Relat. Mater. 5 1516

    [19]

    Zhang Z F, Jia X P, Sun S S, Liu X B, Li Y, Yan B M, Ma H A 2013 Int. J. Refractory Metals Hard Mater. 38 111

    [20]

    Li Y, Jia X P, Hu M H, Liu X B, Yan B M, Zhou Z X, Zhang Z F, Ma H A 2012 Chin. Phys. B 21 058101

    [21]

    Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Bex P 2002 J. Phys. Condens. Matter 14 11269

    [22]

    Coudberg P, Catherine Y 1987 Thin Solid Films 146 93

    [23]

    McNamara K M, Williams B E, Gleason K K, Scruggs B E 1994 J. Appl. Phys. 76 2466

    [24]

    Field J E 1992 The Properties of Natural and Synthetic Diamond (London: Academic) pp36-41, 81-179

    [25]

    Kanda H, Akaishi M Yamaoka S 1999 Diam. Relat. Mater. 8 1441

  • [1] Zhao Yong-Sheng, Yan Feng-Yun, Liu Xue. Calculation of positron annihilation lifetime in diamond doped with B, Cr, Mo, Ti, W, Zr. Acta Physica Sinica, 2024, 73(1): 017802. doi: 10.7498/aps.73.20231269
    [2] Xing Yu-Fei, Ren Ze-Yang, Zhang Jin-Feng, Su Kai, Ding Sen-Chuan, He Qi, Zhang Jin-Cheng, Zhang Chun-Fu, Hao Yue. Characteristics of hydrogen terminated single crystalline diamond logic inverter. Acta Physica Sinica, 2022, 71(8): 088102. doi: 10.7498/aps.71.20211447
    [3] He Jian, Jia Yan-Wei, Tu Ju-Ping, Xia Tian, Zhu Xiao-Hua, Huang Ke, An Kang, Liu Jin-Long, Chen Liang-Xian, Wei Jun-Jun, Li Cheng-Ming. Generation of shallow nitrogen-vacancy centers in diamond with carbon ion implantation. Acta Physica Sinica, 2022, 71(18): 188102. doi: 10.7498/aps.71.20220794
    [4] Wu Jian-Dong,  Cheng Zhi,  Ye Xiang-Yu,  Li Zhao-Kai,  Wang Peng-Fei,  Tian Chang-Lin,  Cheng Hong-Wei. Coherent electrical control of a single electron spin in diamond nitrogen-vacancy centers. Acta Physica Sinica, 2022, 0(0): . doi: 10.7498/aps.71.20220410
    [5] Wu Jian-Dong, Cheng Zhi, Ye Xiang-Yu, Li Zhao-Kai, Wang Peng-Fei, Tian Chang-Lin, Chen Hong-Wei. Coherent electrical control of single electron spin in diamond nitrogen-vacancy center. Acta Physica Sinica, 2022, 71(11): 117601. doi: 10.7498/aps.70.20220410
    [6] Wang Kai-Yue, Guo Rui-Ang, Wang Hong-Xing. Temperature dependence of nitrogen-vacancy optical center in diamond. Acta Physica Sinica, 2020, 69(12): 127802. doi: 10.7498/aps.69.20200395
    [7] Li Yong, Wang Ying, Li Shang-Sheng, Li Zong-Bao, Luo Kai-Wu, Ran Mao-Wu, Song Mou-Sheng. Synthesis of diamond co-doped with B and S under high pressure and high temperature and electrical properties of the synthesized diamond. Acta Physica Sinica, 2019, 68(9): 098101. doi: 10.7498/aps.68.20190133
    [8] Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue. Characteristics of H-terminated single crystalline diamond field effect transistors. Acta Physica Sinica, 2017, 66(20): 208101. doi: 10.7498/aps.66.208101
    [9] Li Yong, Li Zong-Bao, Song Mou-Sheng, Wang Ying, Jia Xiao-Peng, Ma Hong-An. Synthesis and electrical properties study of Ib type diamond single crystal co-doped with boron and hydrogen under HPHT conditions. Acta Physica Sinica, 2016, 65(11): 118103. doi: 10.7498/aps.65.118103
    [10] Fang Chao, Jia Xiao-Peng, Yan Bing-Min, Chen Ning, Li Ya-Dong, Chen Liang-Chao, Guo Long-Suo, Ma Hong-An. Effects of nitrogen and hydrogen co-doped on {100}-oriented single diamond under high temperature and high pressure. Acta Physica Sinica, 2015, 64(22): 228101. doi: 10.7498/aps.64.228101
    [11] Zhang Xiu-Zhi, Wang Kai-Yue, Li Zhi-Hong, Zhu Yu-Mei, Tian Yu-Ming, Chai Yue-Sheng. Effect of nitrogen on the defect luminescence in diamond. Acta Physica Sinica, 2015, 64(24): 247802. doi: 10.7498/aps.64.247802
    [12] Wang Kai-Yue, Zhu Yu-Mei, Li Zhi-Hong, Tian Yu-Ming, Chai Yue-Sheng, Zhao Zhi-Gang, Liu Kai. The defect luminescences of {100} sector in nitrogen-doped diamond. Acta Physica Sinica, 2013, 62(9): 097803. doi: 10.7498/aps.62.097803
    [13] Lin Xue-Ling, Pan Feng-Chun. The magnetism study of N-doped diamond. Acta Physica Sinica, 2013, 62(16): 166102. doi: 10.7498/aps.62.166102
    [14] Wang Kai-Yue, Li Zhi-Hong, Zhang Bo, Zhu Yu-Mei. Investigation of vibronic structures of optical centres in diamond by photoluminescence spectra. Acta Physica Sinica, 2012, 61(12): 127804. doi: 10.7498/aps.61.127804
    [15] Liu Feng-Bin, Wang Jia-Dao, Chen Da-Rong, Zhao Ming, He Guang-Ping. The microstructures of the diamond (100) surfaces with different density of hydrogen adsorption. Acta Physica Sinica, 2010, 59(9): 6556-6562. doi: 10.7498/aps.59.6556
    [16] Li Rong-Bin. Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition. Acta Physica Sinica, 2009, 58(2): 1287-1292. doi: 10.7498/aps.58.1287
    [17] Liang Zhong-Zhu, Liang Jing-Qiu, Zheng Na, Jia Xiao-Peng, Li Gui-Ju. Optical absorbance of diamond doped with nitrogen and the nitrogen concentration analysis. Acta Physica Sinica, 2009, 58(11): 8039-8043. doi: 10.7498/aps.58.8039
    [18] Liu Yan-Yan, Bauer-Grosse E., Zhang Qing-Yu. Structure and growth behavior of low N-doped diamond film by microwave plasma assisted chemical vapor deposition. Acta Physica Sinica, 2007, 56(4): 2359-2368. doi: 10.7498/aps.56.2359
    [19] Li Rong-Bin. Atomic-scale study of boron-nitrogen co-doping into diamond. Acta Physica Sinica, 2007, 56(1): 395-399. doi: 10.7498/aps.56.395
    [20] Hu Xiao-Jun, Li Rong-Bin, Shen He-Sheng, He Xian-Chang, Deng Wen, Luo Li-Xiong. Investigation of defect properties in doped diamond films. Acta Physica Sinica, 2004, 53(6): 2014-2018. doi: 10.7498/aps.53.2014
Metrics
  • Abstract views:  8296
  • PDF Downloads:  610
  • Cited By: 0
Publishing process
  • Received Date:  05 October 2013
  • Accepted Date:  30 October 2013
  • Published Online:  05 February 2014

/

返回文章
返回
Baidu
map