Phase-change behaviors in Ga30Sb70/Sb80Te20 nanocomposite multilayer films

Wang Chang-Zhou; Zhu Wei-Ling; Zhai Ji-Wei; Lai Tian-Shu

doi:10.7498/aps.62.036402

Abstract

Novel Ga30Sb70/Sb80Te20 nanocomposite multilayer films are prepared by alternate sputter deposition of two independent targets of Ga30Sb70 and Sb80Te20 in a magnetron sputtering system. The influence of layer thickness of Ga30Sb70 on the phase-change behavior of Ga30Sb70/Sb80Te20 multilayer film is investigated. The results show that the crystallization temperature can be controlled by adjusting the layer thickness of Ga30Sb70. The crystallization temperature increases with increasing the layer thickness of Ga30Sb70. The optical band gap is also found to increase with increasing in the layer thickness of Ga30Sb70. Transient crystallization dynamics of Ga30Sb70/Sb80Te20 multilayer film induced by single picosecond laser pulse pumping, is studied. The reversible phase transition between amorphous and crystalline state can be achieved by using picosecond laser pulses with different fluences.

Keywords:

Authors and contacts

1.
Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China;
2.
Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;
3.
State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275, China
Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2008AA031402) , the National Natural Science Foundation of China (Grant No. 51202148) and the Foundation Project by Science and Technology Council of Shanghai, China (Grant No. 1052 nm07200).

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Cited By

[1]	Wuttig M, Yamada N 2007 Nat. Mater. 6 824
[2]	Wuttig M, Steimer C 2007 Appl. Phys. A 97 411
[3]	Lankhorst M H R, Ketelaars B W S M M, Wolters R A M 2005 Nat. Mater. 4 347
[4]	Ryu S W, Oh J H, Choi B J, Hwang S Y, Hong S K, Hwang C S, Kim H J 2006 Electrochem. Solid-State Lett. 9 G259
[5]	Wang C Z, Zhai J W, Song S N, Song Z T, Sun M C, Shen B 2011 Electrochem. Solid-State Lett. 14 H258
[6]	Kao K F, Cheng H Y, Jong C A, Lan C J, Chin T S 2007 IEEE Trans. Magn. 43 930
[7]	Lankhorst M H R, van Pieterson L, van Schijndel M, Jacobs B A J, Rijpers Jan C N 2003 Jpn. J. Appl. Phys. 42 863
[8]	Zhu M, Wu L C, Rao F, Song Z T, Li X L, Peng C, Zhou X L, Ren K, Yao D N, Feng S L 2011 J. Alloys Compd. 509 10105
[9]	Simpson R E, Hewak D W, Fons P, Tominaga J, Guerin S, Hayden B E 2008 Appl. Phys. Lett. 92 141921
[10]	Cheng H Y, Kao K F, Lee C M, Chin T S 2008 Thin Solid Films 516 5513
[11]	Wang C Z, Zhai J W, Bai S Y, Shen B 2011 Appl. Surf. Sci. 257 6296
[12]	Wang C Z, Zhai J W, Song S N, Song Z T, Yao X 2011 Curr. Appl. Phys. 11 S345
[13]	Chung K M, Wamwangi D, Woda M, Wuttig M, Bensch W 2008 J. Appl. Phys. 103 083523
[14]	Song K H, Kim S W, Seo J H, Lee H Y 2008 J. Appl. Phys. 104 103516
[15]	Song K H, Beak S C, Lee H Y 2010 J. Appl. Phys. 108 024506
[16]	Rousse A, Rischel C, Fourmaux S, Uschmann I, Sebban S, Grillon G, Balcou P, Förster E, Geindre J P, Audebert P, Gauthier J C, Hulin D 2001 Nature 410 65

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Vol. 62, Issue 3 - 2013-02-05

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