飞秒激光诱导自组织纳米周期结构及其光学特性的研究进展

彭娜娜; 霍燕燕; 周侃; 贾鑫; 潘佳; 孙真荣; 贾天卿

doi:10.7498/aps.62.094201

摘要

飞秒激光具有超快、超强的特点.飞秒激光微纳加工发展非常迅速. 本文综述了近十年来利用飞秒激光在金属、半导体、介质等各类材料中制备的纳米周期结构, 阐述了若干关于飞秒激光诱导纳米周期结构的物理机理的观点.讨论了基于偏振调制的多光束干涉在半导体表面制备纳米周期结构,简要叙述了周期结构对材料光学特性的影响.

关键词:

Micromaching by using femtosecond laser has been developing rapidly. This paper introduces the main developments in the last ten years on the formation mechanisms of periodic ripples in metals, semiconductors, and dielectrics induced by femtosecond lasers. By combining the methods of multi-beam interferences with the self-organized periodic nanostructures, two-dimensional periodic complex nanostructures can be fabricated on the surface of semiconductors. Compared with that of plane surface, the photoluminescence of nanostructures increases greatly.

Keywords:

作者及机构信息

1.
华东师范大学精密光谱科学与技术国家重点实验室, 上海 200062

基金项目: 国家自然科学基金(批准号:51132004,11027403)、国家重大研究计划项目(批准号:2010CB923203,2011CB808105)和上海市自然科学基金重点项目(批准号:11JC1403500,10XD1401800)资助的课题.

Authors and contacts

1.
State Key Laboratory of Precision Spectroscopy, Department of Physics, East China Normal University, Shanghai 200062, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51132004, 11027403 ), the Major Research Plan of the National Natural Science Foundation of China (Grant Nos. 2010CB923203, 2011CB808105), and the Shanghai Natural Science Foundation, China (Grant Nos. 11JC403500, 10XD1401800).

参考文献

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[49]	Shimotsuma Y, Sakakura M, Kazansky P G, Beresna M, Qiu J R, Miura K, Hirao K 2010 Adv. Mater. 22 4039

施引文献

[1]	Birnbaum M 1965 J. Appl. Phys. 36 3688
[2]	Young J F, Preston J S, van Driel H M, Sipe J E 1983 Phys. Rev. B 27 1155
[3]	Emmony D C, Howson R P, Willis L J 1973 Appl. Phys. Lett. 23 598
[4]	Yong H, Zhang T Q, Wang S F, Gong Q H 2000 Acta Phys. Sin. 49 1292 (in Chinese) [杨宏, 张铁桥, 王树峰, 龚旗煌 2000 49 1292]
[5]	Qiu J R, Jiang X W, Zhu C S, Gan F X 2001 Acta Phys. Sin. 50 871 (in Chinese) [邱建荣, 姜雄伟, 朱从善, 干福熹 2001 50 871]
[6]	Lu P X, Yu W, He F 2003 Acta Phys. Sin. 52 1965 (in Chinese) [陆培祥, 余玮, 何峰 2003 52 1965]
[7]	Zeng H D, Qu S L, Jiang X W, Qiu J R, Zhu C S, Gan X F 2003 Acta Phys. Sin. 52 2525 (in Chinese) [曾惠丹, 曲士良, 姜雄伟, 邱建荣, 朱从善, 干福熹 2003 52 2525]
[8]	Varel H, Wahmber M, Rosenfeld A, Ashkenasi D, Campbell E E B 1998 Appl. Surf. Sci. 127 128
[9]	Ozkan A M, Malshe A P, Railkar T A, Brown W D, Shirk M D, Molian P A 1999 Appl. Phys. Lett. 75 3716
[10]	Prodan E, Radloff C, Halas N J, Nordlander P 2003 Science 302 419
[11]	Jia T Q, Chen H X, Huang M, Zhao F L, Qiu J R, Li R X, Xu Z Z, He X K, Zhang J, Kuroda H 2005 Phys. Rev. B 72 125429
[12]	Guo X D, Li R X, Hang Y, Xu Z Z, Yu B K, Ma H L, Sun X W 2007 Mater. Lett. 61 4583
[13]	Vorobyev A Y, Guo C L 2005 Phys. Rev. B 72 195422
[14]	Yang Y, Yang J J, Xue L, Guo Y, 2010 Appl. Phys. Lett. 97 141101
[15]	Qi L, Nishii K, Namba Y 2009 Opt. Lett. 34 1846
[16]	Hou S S, Huo Y Y, Xiong P X, Zhang Y, Zhang S A, Jia T Q, Sun Z R, Qiu J R, Xu Z Z 2011 J. Phys. D 44 505401
[17]	Shen M, Carey J E, Crouch C H, Kandyla M, Stone H A, Mazur E 2008 Nano Lett. 8 2087
[18]	Huang M, Zhao F L, Jia T Q, Cheng Y, Xu N S, Xu Z Z 2007 Nanotech. 18 505301
[19]	Costache F, Henyk M, Reif J 2002 Appl. Surf. Sci. 186 352
[20]	Liang F, Vallée R, Chin S L 2012 Appl. Phys. Lett. 100 251105
[21]	Liang F, Vallée R, Chin S L 2011 Opt. Express 20 4389
[22]	Shimotsuma Y, Kazansky P G, Qiu J R, Hirao K 2003 Phys. Rev. Lett. 91 247405
[23]	Yasumaru N, Miyazaki K, Kiuchi J 2003 Appl. Phys. A: Materials and Processing 76 983
[24]	Borowiec A, Haugen H K 2003 Appl. Phys. Lett. 82 4462
[25]	Bhardwaj V R, Simova E, Rajeev P P, Hnatovsky C, Taylor R S, Rayner D M, Corkum P B 2006 Phys. Rev. Lett. 96 057404
[26]	Dong Y Y, Molian P 2004 Appl. Phys. Lett. 84 10
[27]	Dufft D, Rosenfeld A, Das S K, Grunwald R, Bonse J 2009 J. Appl. Phys. 105 034908
[28]	Huang M, Zhao F L, Cheng Y, Xu N S, Xu Z Z 2009 ACS Nano 3 4060
[29]	Huang M, Zhao F L, Cheng Y, Xu N S, Xu Z Z 2009 Phys. Rev. B 79 125436
[30]	Wang J C, Guo C L 2005 Appl. Phys. Lett. 87 251914
[31]	Wang J C, Guo C L 2007 J. Appl. Phys. 102 053522
[32]	Dufft D, Rosenfeld A, Das S K, Grunwald R, Bonse J 2009 J. Appl. Phys. 105 034908
[33]	Jia X, Jia T Q, Zhang Y, Feng D H, Sun Z R, Qiu J R, Xu Z Z 2010 Opt. Lett. 35 1248
[34]	Jia T Q, Baba M, Suzuki M, Ganeev R A, Kuroda H, Qiu J R, Wang X S, Li R X, Xu Z Z 2008 Opt. Express 16 1874
[35]	Jia X, Jia T Q, Ding L E, Xiong P X, Deng L, Sun Z R, Wang Z G, Qiu J R, Xu Z Z 2009 Opt. Lett. 34 788
[36]	Xiong P X, Jia T Q, Jia X, Feng D H, Zhang S A, Ding L E, Sun Z R, Qiu J R, Xu Z Z 2011 New J. Phys. 13 023044
[37]	Yang Y, Yang J J, Liang C Y, Wang H S 2008 Opt. Express 16 11259
[38]	Vorobyev A Y, Guo C L 2008 Appl. Phys. Lett. 92 041914
[39]	Vorobyev A Y, Topkov A N, Gurin O V, Svich V A, Guo C L 2009 Appl. Phys. Lett. 95 121106
[40]	Zhao Q Z, Ciobanu F, Malzer S, Wang L J 2007 Appl. Phys. Lett. 91 121107
[41]	Jia X, Jia T Q, Zhang Y, Xiong P X, Feng D H, Sun Z R, Xu Z Z 2010 Opt. Express 18 14401
[42]	Vorobyev A Y, Makin V S, Guo C L 2009 Phys. Rev. Lett. 102 234301
[43]	Sudrie L, Franco M, Prade B, Mysyrowicz A 2001 Opt. Commun. 191 333
[44]	Bricchi E, Klappauf B G, Kazansky P G 2004 Opt. Lett. 29 119
[45]	Cheng G, Mishchik K, Mauclair C, Audouard E, Stoian R 2009 Opt. Express 17 9515
[46]	Ramirez L P R, Heinrich M, Richter S, Dreisow F, Keil R, Korovin A V, Peschel U, Nolte S, Tunnermann A 2010 Appl. Phys. A 100 1
[47]	Bricchi E, Mills J D, Kazansky P G, Klappauf B G 2002 Opt. Lett. 27 2200
[48]	Beresna M, Kazansky P G 2010 Opt. Lett. 35 1662
[49]	Shimotsuma Y, Sakakura M, Kazansky P G, Beresna M, Qiu J R, Miura K, Hirao K 2010 Adv. Mater. 22 4039

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