A study of LED with surface photonic crystal structure fabricated by the nanoimprint lithography

Peng Jing; Xu Zhi-Mou; Wu Xiao-Feng; Sun Tang-You

doi:10.7498/aps.62.036104

Abstract

Surface photonic crystal (PC) structure can improve the external quantum efficiency of light-emitting diode (LED). However, it is very difficult to fabricate large area and uniform nanometer photonic crystal structure in this field. In this paper, two-dimensional PC with hole-like structure is successfully transferred to the surface of gallium nitride LED (GaN-LED) by the mental-polymer double-layer mask dry etching technology combined with the nanoimprint lithography. The large area nanometer PC patterns with pore diameter of 240 nm and period of 450 nm are obtained. The results show that the photoluminescence peak intensity of LED with the PC structure is 7.2 times higher than that of the conventional LED.

Keywords:

Authors and contacts

1.
College of Sciences, Wuhan University of Science and Technology, Wuhan 430081, China;
2.
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076042, 60607006), the Special Project on Development of National Key Scientific Instruments and Equipment of China (Grant No. 2011YQ16000205) and the National High Technology Research and Development Program of China (2011AA03A106).

References

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Cited By

[1]	Borodisky M, Yablonovitch E 1997 Proc. SPIE 3002 119
[2]	Xiong W 2009 M. S. Dissertation (Wuhan: Huazhong University of Science and Technoligy) (in Chinese) [熊慰 2009 硕士学位论文(武汉:华中科技大学)]
[3]	Lee K S, Kang E J, Park S J 2003 J. Appl. Phys. 93 9383
[4]	Wierer J J 2001 Appl. Phys. Lett. 78 3379
[5]	Kim J K, Gessmann T, Luo H, Schubert E F 2004 Appl. Phys. Lett. 84 4508
[6]	Yablonovitch E 1987 Phys. Rev. Lett. 58 2059
[7]	Fan S, Villeneuve P R 1997 Phys. Rev. Lett. 78 3294
[8]	Li X L, 2009 Ph. D. Dissertation (Shanghai: Shanghai Jiaotong University) (in Chinese) [李小丽 2009 博士学位论文(上海: 上海交通大学)]
[9]	Ichikawa H, Baba T 2004 Appl. Phys. Lett. 84 457
[10]	Kim D H 2005 Appl. Phys. Lett. 87 3508
[11]	Long D H, Hwang I K, Ryu S W 2009 IEEE J. Sele. Top. Quan. Electro. 15 1257
[12]	Lee J, Kim D H, Kim J, Jeon H 2009 Cur. Appl. Phys. 9 633
[13]	Liu W, Wang L 2010 China Communications 7 134
[14]	Jung G Y 2006 Nano. Lett. 6 351

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Catalog

Vol. 62, Issue 3 - 2013-02-05

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