VO2 low temperature deposition and terahertz transmission modulation

Sun Dan-Dan; Chen Zhi; Wen Qi-Ye; Qiu Dong-Hong; Lai Wei-En; Dong Kai; Zhao Bi-Hui; Zhang Huai-Wu

doi:10.7498/aps.62.017202

Abstract

Recently, the applications of vanadium dioxide film (VO2) in terahertz functional devices have attracted much attention because VO2 has a remarkable response to THz wave, In this work BK7 glass a material highly transparent to both THz and optical band is adopted as a substrate. High-quality VO2 film is deposited on a BK7 substrate using low temperature magnetron sputtering technology. The crystallinity and microstructure of the thin film are investigated by X-ray diffraction and atomic force microscopy. The results indicate that the as-deposited film crystallizes directly into single-phase VO2 with (011) preferred orientation and compact nanostructure. Under a heating-cooling cycle, the film undergos a metal-insulator transition with an abrupt resistivity change reaching more than 4 orders of magnitude. Terahertz transmission modulation is characterized by terahertz time domain spectrum, and a giant modulation depth of 89% is obtained. Due to the high transparence and the huge modulation effect, the VO2/BK7 can be widely used for THz devices such as modulators and switches.

Keywords:

Authors and contacts

1.
State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2.
National Key Laboratory of Science and Technology on Communication, University of Electronic Science and Technology of China,Chengdu 610054, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61131005, 61021061), the Key Grant Project of Chinese Ministry of Education (Grant No. 313013), the "New Century Excellent Talent Foundation", China (Grant No. NCET-11-0068), Sichuan Youth S & T Foundation, China (Grant No. 2011JQ0001), Sichuan International S & T Cooperation Program, China (Grant No. 2010HH0026), and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J034).

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[24]	Gupta A, Aggarwal R, Gupta P, Dutta T, Narayan R J, Narayan J 2009 Appl. Phys. Lett. 95 111915
[25]	Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C, El Khakani M A 2005 Appl. Phys. Lett. 87 051910
[26]	Jiang L J, Carr W N 2004 J. Micromech. Microeng. 14 833
[27]	Rozen J, Lopez R, Haglund R F, Feldman L C 2006 Appl. Phys. Lett. 88 081902
[28]	Qazilbash M M, Brehm M, Chae B G, Ho P C, Andreev G O, Kim B J, Yun S J, Balatsky A V, Maple M B, Keilmann F, Kim H T, Basov D N 2007 Science 318 1750
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Cited By

[1]	Agrawal A, Nahata A 2007 Opt. Express 15 9022
[2]	Kleine-Ostmann T, Pierz K, Hein G, Dawson P, Koch M 2007 IEEE Antennas Propag. 49 24
[3]	O'Hara J F, Taylor A J, Averitt R D, Zide J M, Gossard A C 2006 Appl. Phys. Lett. 88 251119
[4]	Morin F J 1959 Phys. Rev. Lett. 3 34
[5]	Zylbersztejn A, Mott N F 1975 Phys. Rev. B 11 4383
[6]	Chain E E 1991 Appl. Opt. 30 2782
[7]	Lopez R, Boatner L A, Haynes T E, Haglund Jr R F, Feldman L C 2004 Appl. Phys. Lett. 85 1410
[8]	Kim H T, Lee Y W, Kim B J, Chae B G, Yun S J, Kang K Y, Han K J, Yee K J, Lim Y S 2006 Phys. Rev. Lett. 97 266401
[9]	Cui J Z, Da D A, Jiang W S 1998 Acta Phys. Sin. 47 454 (in Chinese) [崔敬忠, 达道安, 姜万顺 1998 47 454]
[10]	Ben-Messaoud T, Landry G, Gariépy J P, Ramamoorthy B, Ashrit P V, Haché A 2008 Opt. Commun. 281 6024
[11]	Seo M, Kyoung J, Park H, Koo S, Kim H S, Bernien H, Kim B J, Choe J H, Ahn Y H, Kim H T, Park N, Park Q H, Ahn K, Kim D S 2010 Nano Lett. 10 2064
[12]	Kyoung J, Seo M, Park H, Koo S, Kim H S, Park Y, Kim B J, Ahn K, Park N, Kim H T, Kim D S 2010 Opt. Express 18 16452
[13]	Wen Q Y, Zhang H W, Yang Q H, Xie Y S, Chen K, Liu Y L 2010 Appl. Phys. Lett. 97 021111
[14]	Choi S B, Kyoung J S, Kim H S, Park H R, Park D J, Kim B J, Ahn Y H, Rotermund F, Kim H T, Ahn K J, Kim D S 2011 Appl. Phys. Lett. 98 071105
[15]	Wen Q Y, Zhang H W, Yang Q H, Chen Z, Long Y, Jing Y L, Lin Y, Zhang P X 2012 J. Phys. D: Appl. Phys. 45 235106
[16]	Driscoll T, Kim H T, Chae B G, Kim B J, Lee Y W, Jokerst N M, Palit S, Smith D R, Ventra M D, Basov D N 2009 Science 325 1518
[17]	Goldflam M D, Driscoll T, Chapler B, Khatib O, Marie Jokerst N, Palit S, Smith D R, Kim B J, Seo G, Kim H T, Ventra M D, Basov D N 2011 Appl. Phys. Lett. 99 044103
[18]	Luo Z F, Wu Z M, Xu X D, Wang T, Jiang Y D 2010 Chin. Phys. B 19 106103
[19]	Nakajima M, Takubo N, Hiroi Z, Ueda Y, Suemoto T 2008 Appl. Phys. Lett. 92 011907
[20]	Shi Q W, Huang W X, Zhang Y X, Yan J Z, Zhang Y B, Mao M, Zhang Y, Tu M J 2011 Acs. Appl. Mater. 3 3523
[21]	Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, Bernussi A, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 053533
[22]	Wang C L, Tian Z, Xing Q R, Gu J Q, Liu F, Hu M L, Chai L, Wang Q Y 2010 Acta Phys. Sin. 59 7857 (in Chinese) [王昌雷, 田震, 邢岐荣, 谷建强, 刘丰, 胡明列, 柴路, 王清月 2010 59 7857]
[23]	Li J, Dho J 2011 Appl. Phys. Lett. 99 231909
[24]	Gupta A, Aggarwal R, Gupta P, Dutta T, Narayan R J, Narayan J 2009 Appl. Phys. Lett. 95 111915
[25]	Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C, El Khakani M A 2005 Appl. Phys. Lett. 87 051910
[26]	Jiang L J, Carr W N 2004 J. Micromech. Microeng. 14 833
[27]	Rozen J, Lopez R, Haglund R F, Feldman L C 2006 Appl. Phys. Lett. 88 081902
[28]	Qazilbash M M, Brehm M, Chae B G, Ho P C, Andreev G O, Kim B J, Yun S J, Balatsky A V, Maple M B, Keilmann F, Kim H T, Basov D N 2007 Science 318 1750
[29]	Jepsen P U, Fischer Bernd M, Thoman A, Helm H, Suh J Y, Lopez R, Haglund R F 2006 Phys. Rev. B 74 205103

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Vol. 62, Issue 1 - 2013-01-05

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