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The quantum-dot samples with single Ge layer and twofold stacked Ge layers are prepared by ion beam sputtering deposition. The different sizes and morphologies of quantum-dots are characterized using atomic force microscope technique. The effects of strain from the capped Ge quantum-dots on the upper Ge wetting layer and the nucleation are also investigated by the buried strain model. The results show that the non-uniform strain in the Si spacing layer which caps the buried quantum-dot layer, leads to the decrease of Ge critical thickness in the upper layer, which increases the upper dot size. The strain intensity increases with the decrease of Si spacer thickness, which results in the changes of dot shape and size in the upper layer. Furthermore, the strain also modulates the distribution of upper quantum-dot layer.
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Keywords:
- Ge quantum dots /
- strain /
- ion beam sputtering
[1] Zhang H, Zhai L X,Wang X, Zhang C Y, Liu J J 2011 Chin. Phys. B 20 037301
[2] Jia B Y, Yu Z Y, Liu Y M, Han L H, Yao W J, Feng H, Ye H 2011 Chin. Phys. B 20 027302
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[4] Valakh M Y, Lytvyn P M, Nikolenko A S, Strelchuk V V, Krasilnik Z F, Lobanov D N, Novikov A V 2010 Appl. Phys. Lett. 96 141909
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[10] Wang C, Yang Y, Yang R D, Li L, Xiong F, Bao J M 2011 Chin. Phys. B 20 026802
[11] Liu F, Davenport S E, Evans H M, Lagally M G 1999 Phys. Rev. Lett. 82 2528
[12] Tersoff J, Teichert C, Lagally M G 1996 Phys. Rev. Lett. 76 1675
[13] Schittenhelm P, Abstreiter G, Darhuber A, Bauer G, Werner P, Kosogov A 1997 Thin Solid Films 294 291
[14] Rastelli A, Stoffel M, Tersoff J, Kar G S, Schmidt O G 2005 Phys. Rev. Lett. 95 026103
[15] Leite M S, Malachias A, Kycia S W, Kamins T I, Williams R S, Medeiros-Ribeiro G 2008 Phys. Rev. Lett. 100 226101
[16] Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267
[17] Yang J, Wang C, Xiong F, Tao D P, Yang Y 2012 Mater. Technol. B (in press)
[18] Zhang X G, Wang C, Lu Z Q, Yang J, Li L, Yang Y 2011 Acta Phys. Sin. 60 096101 (in Chinese) [张学贵, 王茺, 鲁植全, 杨杰, 李亮, 杨宇 2011 60 096101]
[19] Marchetti R, Montalenti F, Miglio L, Capellini G, SetaMD, Evangelisti F 2005 Appl. Phys. Lett. 87 261919
[20] Jiang Z M, Jiang X M, Jiang W R, Jia Q J, Zheng W L, Qian D C 2000 Appl. Phys. Lett. 76 3397
[21] Deng N, Wang J L, Huang W T, Chen P Y, Li Z J 2003 Chin. J. Semiconduct. 24 951 (in Chinese) [邓宁, 王吉林, 黄文韬, 陈培毅, 李志坚 2003 半导体学报 24 951]
[22] Thanh V L, Yam V, Boucaud P, Fortuna F, Ulysse C, Bouchier D, Vervoort L, Lourtoz J M 1999 Phys. Rev. B 60 5851
[23] Stoffel M, Rastelli A, Tersoff J, Merdzhanova T, Schmidt O G 2006 Phys. Rev. B 74 155326
[24] Rastelli A, Kummer M, Känel H V 2001 Phys. Rev. Lett. 87 256101
[25] Huang C J, Zuo Y H, Li D Z, Cheng B W, Luo L P, Yu J Z, Wang Q M 2001 Appl. Phys. Lett. 78 3881
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[1] Zhang H, Zhai L X,Wang X, Zhang C Y, Liu J J 2011 Chin. Phys. B 20 037301
[2] Jia B Y, Yu Z Y, Liu Y M, Han L H, Yao W J, Feng H, Ye H 2011 Chin. Phys. B 20 027302
[3] Deng N, Chen P Y, Li Z J 2004 Acta Phys. Sin. 53 3136 (in Chinese) [邓宁, 陈培毅, 李志坚 2004 53 3136]
[4] Valakh M Y, Lytvyn P M, Nikolenko A S, Strelchuk V V, Krasilnik Z F, Lobanov D N, Novikov A V 2010 Appl. Phys. Lett. 96 141909
[5] Zhou W M, Cai C Y, Wang C Y, Yin S Y 2009 Acta Phys. Sin. 58 5585 (in Chinese) [周旺民, 蔡承宇, 王崇愚, 尹姝媛 2009 58 5585]
[6] Makeev M A, Madhukar A 2006 Nano Lett. 6 1279
[7] Usami N, Araki Y, Ito Y, Miura M, Shiraki Y 2000 Appl. Phys. Lett. 76 3723
[8] Thanh V L, Yam V 2003 Appl. Surf. Sci. 212-213 296
[9] Yang Y, Wang C, Yang R D, Li L, Xiong F, Bao J M 2009 Chin. Phys. B 18 4906
[10] Wang C, Yang Y, Yang R D, Li L, Xiong F, Bao J M 2011 Chin. Phys. B 20 026802
[11] Liu F, Davenport S E, Evans H M, Lagally M G 1999 Phys. Rev. Lett. 82 2528
[12] Tersoff J, Teichert C, Lagally M G 1996 Phys. Rev. Lett. 76 1675
[13] Schittenhelm P, Abstreiter G, Darhuber A, Bauer G, Werner P, Kosogov A 1997 Thin Solid Films 294 291
[14] Rastelli A, Stoffel M, Tersoff J, Kar G S, Schmidt O G 2005 Phys. Rev. Lett. 95 026103
[15] Leite M S, Malachias A, Kycia S W, Kamins T I, Williams R S, Medeiros-Ribeiro G 2008 Phys. Rev. Lett. 100 226101
[16] Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267
[17] Yang J, Wang C, Xiong F, Tao D P, Yang Y 2012 Mater. Technol. B (in press)
[18] Zhang X G, Wang C, Lu Z Q, Yang J, Li L, Yang Y 2011 Acta Phys. Sin. 60 096101 (in Chinese) [张学贵, 王茺, 鲁植全, 杨杰, 李亮, 杨宇 2011 60 096101]
[19] Marchetti R, Montalenti F, Miglio L, Capellini G, SetaMD, Evangelisti F 2005 Appl. Phys. Lett. 87 261919
[20] Jiang Z M, Jiang X M, Jiang W R, Jia Q J, Zheng W L, Qian D C 2000 Appl. Phys. Lett. 76 3397
[21] Deng N, Wang J L, Huang W T, Chen P Y, Li Z J 2003 Chin. J. Semiconduct. 24 951 (in Chinese) [邓宁, 王吉林, 黄文韬, 陈培毅, 李志坚 2003 半导体学报 24 951]
[22] Thanh V L, Yam V, Boucaud P, Fortuna F, Ulysse C, Bouchier D, Vervoort L, Lourtoz J M 1999 Phys. Rev. B 60 5851
[23] Stoffel M, Rastelli A, Tersoff J, Merdzhanova T, Schmidt O G 2006 Phys. Rev. B 74 155326
[24] Rastelli A, Kummer M, Känel H V 2001 Phys. Rev. Lett. 87 256101
[25] Huang C J, Zuo Y H, Li D Z, Cheng B W, Luo L P, Yu J Z, Wang Q M 2001 Appl. Phys. Lett. 78 3881
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