溅射沉积自诱导混晶界面与Ge量子点的生长研究

熊飞; 潘红星; 张辉; 杨宇

doi:10.7498/aps.60.088102

摘要

在不同的沉积温度下采用离子束溅射技术,在Si基底上生长得到分布密度高、尺寸单模分布的圆顶形Ge量子点.研究发现:随沉积温度的升高Ge量子点的分布密度增大,尺寸减小,当沉积温度升高到750 ℃时,溅射沉积15个单原子层厚的Ge原子层,生长得到高度和底宽分别为14.5和52.7 nm的Ge量子点,其分布密度高达1.681010 cm-2;Ge量子点的形貌、尺寸和分布密度随沉积温度的演变规律与热平衡状态下气相凝聚的量子点不同,具有稳定形状特征和尺寸分布的Ge量子点是

关键词:

Abstract

The dense domes of Ge quantum dots on Si (001) substrate with a monomodal morphology distribution are deposited at different temperatures by ion beam sputtering (IBS). The areal density of the Ge quantum dots is observed to increase with elevating temperature, but the dots size to decrease. As the deposition temperature increases to 750 ℃, the smaller Ge quantum dots each with a height of 14.5 nm and base width of 52.7 nm are obtained by sputtering 15 monolayer Ge coverage, and the dots areal density is up to 1.681010 cm-2 at the same time. Thus the evolution of Ge quantum dot prepared by IBS is very different from that by vapor deposition at thermal equilibrium condition. The stable shape and the size distribution are demonstrated to result from the kinetic behavior of the surface atoms which is restricted by the thermodynamic limitations. A mix-crystal interface including amorphous and crystal components is revealed by Raman spectrum, and this special interface is demonstrated to contribute to the high density of Ge quantum dots, since the boundaries between the two different components can provide more preferential centers for the nucleation. As the density increases at high deposition temperature, the elastic repulsion between islands is enhanced, resulting in the surface atoms growing along the orientation of high index during the IBS deposition, and inducing the increase in aspect ratio and the reduction in island size.

Keywords:

作者及机构信息

1.
云南大学工程技术研究院,昆明 650091;

2.
昆明理工大学光电子新材料研究所,昆明 650093

基金项目: 云南省应用基础研究基金(批准号:2008CC012,2009CD003)、云南省教育厅科学研究基金重点项目(批准号:09C008)和云南大学科研基金(批准号:2009E28Q)资助的课题.

Authors and contacts

1.
Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, China;

2.
Institute of Advanced Materials for Photo-electronics, Kunming University of Science and Technology, Kunming 650093, China

参考文献

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施引文献

[1]	Eaglesham D J, Cerullo M 1990 Phys. Rev. Lett. 64 1943
[2]	Larsson M, Elfving A, Holtz P O, Hnsson G V, Ni W X 2003 Surf. Sci. 532535 832
[3]
[4]
[5]	Rokhinson L P, Tsui D C, Benton J L 1999 Appl. Phys. Lett. 75 2413
[6]	Tong S, Lee J Y, Kin H J, Liu F, Wang K L 2005 Opt. Mater. 27 1097
[7]
[8]	Wang X, Jiang Z M, Zhu H J, Lu F, Huang D M, Kiu X H, Hu C W, Chen Y F, Zhu Z Q, Yao T 1997 Appl. Phys. Lett. 71 3543
[9]
[10]	Kamins T I, Carr E C, Williams R S, Rosner S J 1997 J. Appl. Phys. 81 211
[11]
[12]
[13]	Ross F M, Tromp R M, Reuter M C 1999 Science 286 1931
[14]	Jin G, Liu J L, Wang K L 2003 Appl. Phys. Lett. 83 2847
[15]
[16]
[17]	Medeiros-Ribeiro G, Bratkovski A M, Kamins T I, Ohlberg D A A, Williams R S 1998 Science 279 353
[18]
[19]	Capellini G, De Seta M, Evangelisti F 2003 J. Appl. Phys. 93 291
[20]	Shchukin V A, Ledentsov N N, Kopev P S, Bimberg D 1995 Phys. Rev. Lett. 75 2968
[21]
[22]	Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A, Williams R S 1999 J. Appl. Phys. 85 1159
[23]
[24]	Sasaki K, Nabetani Y, Miyashita H, Hata T 2000 Thin Solid Films 369 171
[25]
[26]
[27]	Sasaki K, Takahashi Y, Ikeda T, Hata T 2002 Vacuum 66 457
[28]	Sasaki K, Nakata K, Hata T 1997 Appl. Surf. Sci. 113/114 43
[29]
[30]	Sasaki K, Nagai H, Hata T 2000 Vacuum 59 397
[31]
[32]	Vescan L, Stoica T, Chretien O, Goryll M, Mateeva E, Muck A 2000 J. Appl. Phys. 87 7275
[33]
[34]
[35]	Ross F M, Tersoff J, Tromp R M 1998 Phys. Rev. Lett. 80 984
[36]
[37]	Wagner R J, Gulari E 2005 Surf. Sci. 590 1
[38]
[39]	Shchukin V A, Ledentsov N N, Hoffmann A, Bimberg D, Soshnikov I P, Volovik B V, Ustnov V M, Litvinov D, Gerthsen D 2002 Phys. Stat. Sol. B 224 503
[40]
[41]	Barab A L 1999 Mater. Sci. Eng. B 67 23
[42]
[43]	Koduvely H M, Zangwill A 1999 Phys. Rev. B 60 R2204
[44]
[45]	Zhang Y W, Brower A F 2001 Appl. Phys. Lett. 78 2706
[46]
[47]	Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267
[48]	Floro J A, Lucadamo G A, Chason E, Freund L B, Sinclair M, Twesten R D, Hwang R Q 1998 Phys. Rev. Lett. 80 4717
[49]
[50]	Rickman J M, Srolovitz D J 1993 Surf. Sci. 284 211
[51]
[52]	Gonzalez-Hernandez J, Azarbayejani G H, Tsu R, Pollak F H 1985 Appl. Phys. Lett. 47 1350
[53]
[54]
[55]	Liu J L, Jin G, Tang Y S, Luo Y H, Wang K L, Yu D P 2000 Appl. Phys. Lett. 76 586
[56]	Duan B X, Yang Y T 2009 Acta Phys. Sin. 58 7114 (in Chinese) [段宝兴、杨印堂 2009 58 7114]
[57]
[58]
[59]	Cai Q J, Zhou H, Lu F 2007 Appl. Surf. Sci. 253 4792
[60]	Brya W J 1973 Solid State Commun. 12 253
[61]
[62]	Cerdeira F, Pinczuk A, Bean J C, Batlogg B, Wilson B A 1984 Appl. Phys. Lett. 45 1138
[63]

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