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In this paper, N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films are deposited by ion beam sputtering with Bi/Te and Sb/Te binary compound target. Sb2Te3 thin films and Bi2Te3 thin films are annealed at different annealing temperatures for 1 h and their thermoelectric properties are characterized. When the annealing temperature is 150 ℃, both the Seebeck coefficient and power factor of the Bi2Te3 thin films have maximal values of -148 μVK-1 and 0.893×10-3 Wm-1K-2 respectively. Sb2Te3 thermoelectric thin film has a seebeck coefficient of 117 μVK-1 and a maximal power factor of 0.797×10-3 Wm-1K-2 when the annealing temperature is 200 ℃. Therefore, Sb2Te3 thin films at the annealing temperature of 200 oC and Bi2Te3 thin films at the annealing temperature of 150 ℃ are selected to fabricate the single thin film thermoelectric generation. When the temperature difference between the cold side and the heat side is 50K, the output voltage of the single thin film thermoelectric generation is 15.26 mV and the maximal output power is 0.129 μW.
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Keywords:
- thin film thermoelectric generation /
- Bi2Te3 thin film /
- Sb2Te3 thin film /
- ion beam sputtering
[1] Bell L E 2008 Science 321 1457
[2] DiSalvo F J 1999 Science 285 703
[3] Wei Wang,Falong Jia,Qinghua Huang,Jianzhong Zhang 2005 Microelectronic Engineering 77 223
[4] Ichiro Matsubara, Ryoji Funahashi, Tomonari Takeuchi, Satoshi Sodeoka, Tadaaki Shimizu, Kazuo Ueno 2001 American Institute of Physics 78 3627
[5] Wenjie Xie, Jian He, Hye Jung Kang, Xinfeng Tang, Song Zhu, Mark Laver, Shanyu Wang, John, Paothep Pichanusakorn,Prabhakar Bandaru 2010 Science and Engineering R 67 19
[6] Copley R D, Brown C M, Zhang Q J, Tritt T M 2010 Nano Lett. 10 3283
[7] Mu W D, Cheng H F, Tang G P, Wu Z Q 2009 Acta Phys. Sin. 58 1212 (in Chinese) [穆武第、 程海峰、 唐耿平、 吴志桥 2009 58 1212]
[8] Fan P, Zhang D P, Liang G X, Zheng Z H 2009 State Intellectual Property Office of P.R.C CN101483218 (in Chinese) [范 平、 张东平、 梁广兴、 郑壮豪 2009 中华人民共和国国家知识产权局 CN101483218]
[9] Kwon S D, Ju B K,Yoon S J,Kim J S 2009 Journal of Electronic Materials 38 920
[10] Liao C N, She T H 2007 Thin Solid Films 515 8059
[11] Jiang M B, Wu Z X, Zhou M, Huang R J, Li L F 2010 Acta Phys. Sin. 59 7314 (in Chinese) [蒋明波、 吴智雄、 周 敏、 黄荣进、 李来风 2010 59 7314]
[12] Zheng Z H, Fan P, Liang G X, Zhang D P, Cai X M, Chen T B 2010 Journal of Physics and Chemistry of Solid 71 1713
[13] Helin Zou, Rowe D M, Gao Min 2001 Journal of Crystal Growth 222 82
[14] Fan P, Zheng Z H, Liang G X, Cai X M, Zhang D P 2010 Chin. Phys. Lett. 27 087201
[15] Fan P, Zheng Z H, Liang G X, Zhang D P, Cai X M 2010 Journal of Alloys and Compounds 505 278
[16] Gao X H,Yang Q Y,Zhu W,Bao S Q,Pan X A,Duan X K 2006 Science in China Series E 1273 (in Chinese) [郜鲜辉、 杨君友、 朱 文、 侯 杰、 鲍思前、 樊希安、 段兴凯 2006 中国科学E 36 1273]
[17] Fan P, Zheng Z H, Liang G X, Zhang D P, Cai X M 2010 Acta Phys. Sin. 59 1243 (in Chinese) [范 平、 郑壮豪、 梁广兴、 张东平、 蔡兴民 2010 59 1243]
[18] Takashiri M, Shirakawa T, Miyazaki K, Tsukamoto T 2007 Sensors and Actuators A 138 329
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[1] Bell L E 2008 Science 321 1457
[2] DiSalvo F J 1999 Science 285 703
[3] Wei Wang,Falong Jia,Qinghua Huang,Jianzhong Zhang 2005 Microelectronic Engineering 77 223
[4] Ichiro Matsubara, Ryoji Funahashi, Tomonari Takeuchi, Satoshi Sodeoka, Tadaaki Shimizu, Kazuo Ueno 2001 American Institute of Physics 78 3627
[5] Wenjie Xie, Jian He, Hye Jung Kang, Xinfeng Tang, Song Zhu, Mark Laver, Shanyu Wang, John, Paothep Pichanusakorn,Prabhakar Bandaru 2010 Science and Engineering R 67 19
[6] Copley R D, Brown C M, Zhang Q J, Tritt T M 2010 Nano Lett. 10 3283
[7] Mu W D, Cheng H F, Tang G P, Wu Z Q 2009 Acta Phys. Sin. 58 1212 (in Chinese) [穆武第、 程海峰、 唐耿平、 吴志桥 2009 58 1212]
[8] Fan P, Zhang D P, Liang G X, Zheng Z H 2009 State Intellectual Property Office of P.R.C CN101483218 (in Chinese) [范 平、 张东平、 梁广兴、 郑壮豪 2009 中华人民共和国国家知识产权局 CN101483218]
[9] Kwon S D, Ju B K,Yoon S J,Kim J S 2009 Journal of Electronic Materials 38 920
[10] Liao C N, She T H 2007 Thin Solid Films 515 8059
[11] Jiang M B, Wu Z X, Zhou M, Huang R J, Li L F 2010 Acta Phys. Sin. 59 7314 (in Chinese) [蒋明波、 吴智雄、 周 敏、 黄荣进、 李来风 2010 59 7314]
[12] Zheng Z H, Fan P, Liang G X, Zhang D P, Cai X M, Chen T B 2010 Journal of Physics and Chemistry of Solid 71 1713
[13] Helin Zou, Rowe D M, Gao Min 2001 Journal of Crystal Growth 222 82
[14] Fan P, Zheng Z H, Liang G X, Cai X M, Zhang D P 2010 Chin. Phys. Lett. 27 087201
[15] Fan P, Zheng Z H, Liang G X, Zhang D P, Cai X M 2010 Journal of Alloys and Compounds 505 278
[16] Gao X H,Yang Q Y,Zhu W,Bao S Q,Pan X A,Duan X K 2006 Science in China Series E 1273 (in Chinese) [郜鲜辉、 杨君友、 朱 文、 侯 杰、 鲍思前、 樊希安、 段兴凯 2006 中国科学E 36 1273]
[17] Fan P, Zheng Z H, Liang G X, Zhang D P, Cai X M 2010 Acta Phys. Sin. 59 1243 (in Chinese) [范 平、 郑壮豪、 梁广兴、 张东平、 蔡兴民 2010 59 1243]
[18] Takashiri M, Shirakawa T, Miyazaki K, Tsukamoto T 2007 Sensors and Actuators A 138 329
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