生长方向对量子点应变与应变弛豫的影响

叶盈; 周旺民

doi:10.7498/aps.62.058105

摘要

由于材料弹性的各向异性与表面能的各向异性, 不同的生长方向或生长面, 量子点有不同的力学性能与行为. 本文基于各向异性弹性理论的有限元方法, 以金字塔型自组织InAs/GaAs半导体量子点为研究对象, 分别在7个常见的生长方向或生长面上, 对其应变能和应变弛豫能、自由能等进行了分析计算, 得到了这些能量随生长方向的变化规律. 结果表明(211)量子点应变弛豫能最大, 而(100)量子点应变弛豫能最小. 这些结果可为可控制备量子点提供理论参考.

关键词:

Abstract

Different growth orientations influence the mechanical properties and behavior of quantum dots, due to the anisotropy of elasticity and surface energy of the material. In this paper, the relations of the strain energy, strain relaxation energy and free energy to growth orientation are analyzed for the self-assembled InAs/GaAs semiconductor quantum dots, based on finite element method of cubic elasticity theory. The results show that the strain relaxation of the (211) quantum dots is biggest, and that of the (100) quantum dots is smallest. These can provide the theoretical basis for the growth of quantum dots in a controlled fashion.

Keywords:

作者及机构信息

叶盈,
周旺民

1.
浙江工业大学机械工程学院, 杭州 310032

基金项目: 浙江省自然科学基金(批准号: Y6100440)资助的课题.

Authors and contacts

1.
College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310032, China

Funds: Project supported by the Natural Science Foundation of Zhejiang pvovince, China (Grant No. Y6100440).

参考文献

[1]	Romanov A E, Petroff P M, Speck J S 1999 Appl. Phys. Lett. 74 2280
[2]	Klimov V I 2003 Los Alamos Science 28 214
[3]	Shchukin V A, Bimberg D 1998 J. Phys. Lett. A 67 687
[4]	Wang Z G 2000 Acta Phys. Sin. 45 643 (in Chinese) [王占国 2000 49 643]
[5]	Wu Z Q,Wang B 2001 Growth of Thin Films (1st Ed.) (Beijing: Science Press) (in Chinese) [吴自勤, 王兵 2001 薄膜生长(第一版) (北京: 科学出版社)]
[6]	Zhao F A, Zhang C L, Wang Z G 2004 Acta Phys. Sin. 53 249 (in Chinese) [赵凤嫒, 张春玲, 王占国 2004 53 249]
[7]	Wang W Q, Shen Z Y, Bai Y J Y, Hou S M, Zhao X Y, Liu W M, Xue Z Q 2003 Vacuum Science And Technology (China) 23 231 (in Chinese) [万维强, 申自勇, 柏亚军, 侯士敏, 赵兴钰, 刘维敏, 薛增泉 2003 真空科学与技术 23 231]
[8]	Niu Z H, Ren Z W, HE Z H 2008 Acta Photonica Sinica 37 1107
[9]	Ulloa J M, Koenraad P M, Gapihan E, Létoublon A, Bertru N 2007 Appl. Phys. Lett. 91 3106
[10]	Makeev M A, Yu W B, Madhukar A 2004 J. Phys. Lett. 96 4429
[11]	Glas F 2003 Phys. Solid State B 237 599
[12]	Ni Y, He L H, Song J 2004 Surf. Sci. 553 189
[13]	Benabbas T, Androussi Y 1999 J. Phys. Lett. 86 1945
[14]	Zhou W M, Cai C Y, Yin S Y, Wang C Y 2008 Appl. Surf. Sci. 10 1016
[15]	Grundmann M, Christen J, Ledentsov N N, Böhrer J, Bimberg D 1995 Phys. Rev. Lett. 74 4043
[16]	Liu H Y, Xu B, Chen Y H 2000 J. Phys. Lett. 88 5433
[17]	Freund L B, Suresh S 2003 Thin film materials: stress, defect formation, and surface evolution (1st Ed.) (UK: Cambridge University Press)
[18]	Chen G, Liao L J 2007 Crystal Physics (2nd Ed.) (Beijing: Science Press) p27 (in Chinese)[陈纲, 廖理几 2007 晶体物理学基础(第二版) (北京: 科学出版社)第27页]
[19]	Liu P, Zhang Y W, Lu C 2003 Phys. Rev. B 68 195341
[20]	Zhang C H 2008 ANSYS12.0 (3nd Ed.) (Beijing: China Machine Press) (in Chinese) [张朝晖 2008 ANSYS12.0 (第三版) (北京: 机械工业出版社)]
[21]	Budiman R A, Ruda H E 2000 J. Phys. Lett. 88 4586

施引文献

[1]	Romanov A E, Petroff P M, Speck J S 1999 Appl. Phys. Lett. 74 2280
[2]	Klimov V I 2003 Los Alamos Science 28 214
[3]	Shchukin V A, Bimberg D 1998 J. Phys. Lett. A 67 687
[4]	Wang Z G 2000 Acta Phys. Sin. 45 643 (in Chinese) [王占国 2000 49 643]
[5]	Wu Z Q,Wang B 2001 Growth of Thin Films (1st Ed.) (Beijing: Science Press) (in Chinese) [吴自勤, 王兵 2001 薄膜生长(第一版) (北京: 科学出版社)]
[6]	Zhao F A, Zhang C L, Wang Z G 2004 Acta Phys. Sin. 53 249 (in Chinese) [赵凤嫒, 张春玲, 王占国 2004 53 249]
[7]	Wang W Q, Shen Z Y, Bai Y J Y, Hou S M, Zhao X Y, Liu W M, Xue Z Q 2003 Vacuum Science And Technology (China) 23 231 (in Chinese) [万维强, 申自勇, 柏亚军, 侯士敏, 赵兴钰, 刘维敏, 薛增泉 2003 真空科学与技术 23 231]
[8]	Niu Z H, Ren Z W, HE Z H 2008 Acta Photonica Sinica 37 1107
[9]	Ulloa J M, Koenraad P M, Gapihan E, Létoublon A, Bertru N 2007 Appl. Phys. Lett. 91 3106
[10]	Makeev M A, Yu W B, Madhukar A 2004 J. Phys. Lett. 96 4429
[11]	Glas F 2003 Phys. Solid State B 237 599
[12]	Ni Y, He L H, Song J 2004 Surf. Sci. 553 189
[13]	Benabbas T, Androussi Y 1999 J. Phys. Lett. 86 1945
[14]	Zhou W M, Cai C Y, Yin S Y, Wang C Y 2008 Appl. Surf. Sci. 10 1016
[15]	Grundmann M, Christen J, Ledentsov N N, Böhrer J, Bimberg D 1995 Phys. Rev. Lett. 74 4043
[16]	Liu H Y, Xu B, Chen Y H 2000 J. Phys. Lett. 88 5433
[17]	Freund L B, Suresh S 2003 Thin film materials: stress, defect formation, and surface evolution (1st Ed.) (UK: Cambridge University Press)
[18]	Chen G, Liao L J 2007 Crystal Physics (2nd Ed.) (Beijing: Science Press) p27 (in Chinese)[陈纲, 廖理几 2007 晶体物理学基础(第二版) (北京: 科学出版社)第27页]
[19]	Liu P, Zhang Y W, Lu C 2003 Phys. Rev. B 68 195341
[20]	Zhang C H 2008 ANSYS12.0 (3nd Ed.) (Beijing: China Machine Press) (in Chinese) [张朝晖 2008 ANSYS12.0 (第三版) (北京: 机械工业出版社)]
[21]	Budiman R A, Ruda H E 2000 J. Phys. Lett. 88 4586

计量

文章访问数: 8057
PDF下载量: 555
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板