透射式GaAs光电阴极性能提高以及结构优化

吕行; 富容国; 常本康; 郭欣; 王芝

doi:10.7498/aps.73.20231542

摘要

为了提高透射式GaAs光电阴极性能, 将国内与美国ITT公司的透射式GaAs光电阴极量子效率曲线进行对比, 可知我国透射式光电阴极积分灵敏度已经达到2130 μA/lm, 美国ITT达到了2330 μA/lm. 利用修正后的量子效率、光学性能以及积分灵敏度的理论模型, 分别对两者进行光学结构拟合. 结果表明, 国内光电阴极在窗口层和发射层的厚度、电子扩散长度以及后界面复合速率等方面均与ITT有一定差距. 为了缩短两者的差距, 优化阴极结构参数, 具体研究了电子扩散长度和发射层厚度对量子效率的影响, 结果表明如果均匀掺杂透射式GaAs光电阴极发射层厚度为1.3 μm、电子扩散长度为7 μm, 则积分灵敏度可以达到2800 μA/lm以上.

关键词:

Abstract

In order to improve the performance of transmitted GaAs photoelectric cathode, the quantum efficiency curve of Chinese transmitted GaAs photoelectric cathode is compared with that of the product of American ITT company, showing that the integration sensitivity of Chinese transmitted photoelectric cathode is 2130 μA/lm, and the American ITT company’s reaches 2330 μA/lm. Through the matrix method to solve the three membranes, the theoretical reflectivity is obtained. Based on the uniform doping transmission GaAs photocathode quantum efficiency formula, by replacing the fixed value R with variable value $ {R}_{{\mathrm{t}}{\mathrm{h}}{\mathrm{e}}} $, adding the short wave constraint factor, and modifying the quantum efficiency formula, a modified uniform doping transmission GaAs photocathode quantum efficiency formula is obtained. Using the revised quantum efficiency, optical performance and integral sensitivity theory model, through fitting the quantum efficiency curve of American ITT company product, introducing the ITT cathode component performance parameters, comparing the performance parameters of Chinese product, the results show that the Chinese photocathode in the window layer, the thickness of the emission layer, electron diffusion length and rear interface composite rate has a certain gap with ITT’s. In order to shorten the gap between the two and optimize the cathode structure parameters, the transmission GaAs photocathode optical structure software is designed to further analyze the influence of the electron diffusion length and the emission layer thickness on the quantum efficiency of the photocathode. The results show that with an electron diffusion length of 7 μm and emission layer thickness of 1.5 μm, the transmitted GaAs photocathode sensitivity can be more than 2800 μA/lm. However, the large electron diffusion length has high requirements for cathode materials and preparation level. The reasons responsible for the performance gap between Chinese product and other country’s are that in China the growth process of cathode materials is not jet matureand the cathode preparation equipment is out of date . In this paper, we study the relationship between GaAs photocathode optical performance and photoemission performance, and further optimize the structural design of cathode components, which has certain guiding significance for improving the cathode quantum efficiency and the level of image intensifier.

Keywords:

作者及机构信息

1.
南京理工大学电子工程与光电技术学院, 南京　210094

2.
昆明物理研究所, 昆明　650221

3.
西安应用光学研究所, 西安　710065

通信作者: 富容国, frguo@njust.edu.cn

Authors and contacts

1.
Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science & Technology, Nanjing 210094, China

2.
Kunming Institute of Physics, Kunming 650221, China

3.
Xi’an Institute of Applied Optics, Xi’an 710065, China

Corresponding author: Fu Rong-Guo, frguo@njust.edu.cn

文章全文 : translate this paragraph

参考文献

[1]	李晓峰, 何雁彬, 徐传平, 李金沙, 张勤东 2022 红外技术 44 1249 Li X F, He Y B, Xu C P, Li J S, Zhang Q D 2022 Infrared Technol. 44 1249
[2]	张益军 2022 红外技术 44 778 Zhang Y J 2022 Infrared Technol. 44 778
[3]	Li X D, Jiang Z G, Gu Q, Zhao M H, Guo L 2020 Chin. Phys. Lett. 37 012901 Google Scholar
[4]	杜晓晴 2005 博士学位论文 (南京: 南京理工大学) Du X Q 2005 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology
[5]	张益军 2012 博士学位论文 (南京: 南京理工大学) Zhang Y J 2012 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology
[6]	邹继军 2007 博士学位论文 (南京: 南京理工大学) Zou J J 2007 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology
[7]	赵静 2013 博士学位论文 (南京: 南京理工大学) Zhao J 2013 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology
[8]	邹继军, 常本康, 杨智 2007 56 2992 Google Scholar Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 Google Scholar
[9]	杨智, 邹继军, 常本康 2010 59 4290 Google Scholar Yang Z, Zou J J, Chang B K 2010 Acta Phys. Sin. 59 4290 Google Scholar
[10]	刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京: 电子工业出版社) Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Press of Electronic Industry
[11]	唐纳德·内曼著 (赵毅强, 姚素英, 解晓东译) 2005 半导体物理与器件 (北京: 电子工业出版社) Neamen D A (translated by Zhao Y Q, Yao S Y, Xie X D) 2005 Semiconductor Physics and Devices (Beijing: Electronic Industry Press
[12]	张嘎 2021 硕士学位论文 (南京: 南京理工大学) Zhang G 2021 M. S. Thesis (Nanjing: Nanjing University of Science and Technology
[13]	赵静, 张益军, 常本康, 熊雅娟, 张俊举, 石峰, 程宏昌, 崔东旭 2011 60 107802 Google Scholar Zhao J, Zhang Y J, Chang B K, Xiong Y J, Zhang J J, Shi F, Cheng H C, Cui D X 2011 Acta Phys. Sin. 60 107802 Google Scholar
[14]	石峰, 赵静, 程宏昌, 张益军, 熊雅娟, 常本康 2012 光谱学与光谱分析 32 297 Google Scholar Shi F, Zhao J, Cheng H C, Zhang Y J, Xiong Y J, Chang B K 2012 Spectrosc. Spectral Anal. 32 297 Google Scholar
[15]	赵静, 常本康, 张益军, 张俊举, 石峰, 程宏昌, 崔东旭 2012 61 037803 Google Scholar Zhao J, Chang B K, Zhang Y J, Zhang J J, Shi F, Cheng H C, Cui D X 2012 Acta Phys. Sin. 61 037803 Google Scholar
[16]	郭向阳 2011 硕士学位论文 (南京: 南京理工大学) Guo X Y 2011 M. S. Thesis (Nanjing: Nanjing University of Science and Technology
[17]	Feng C, Zhang Y J, Qian Y S, et al. 2016 Opt. Commun. 369 50 Google Scholar
[18]	Feng C, Zhang Y J, Qian Y S, Chang B K, Shi F, Jiao G C 2015 Opt. Express. 194 7888
[19]	冯琤, 张益军, 钱芸生 2015 中国科技论文 10 1916 Google Scholar Feng C, Zhang Y J, Qian Y S 2015 Chin. Sciencepaper 10 1916 Google Scholar
[20]	冯琤 2018 博士学位论文 (南京: 南京理工大学) Feng C 2018 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology

施引文献

图 1 求解三层膜的矩阵法

Fig. 1. Matrix method for solving three film.

下载: 全尺寸图片幻灯片

图 2 $ {{\mathrm{G}}{\mathrm{a}}}_{1-x}{{\mathrm{A}}{\mathrm{l}}}_{x}{\mathrm{A}}{\mathrm{s}} $光学常数随Al组分的变化^[10]

Fig. 2. Variation of the ${{\mathrm{G}}{\mathrm{a}}}_{1-x}{{\mathrm{A}}{\mathrm{l}}}_{x}{\mathrm{A}}{\mathrm{s}} $ optical constant with the Al component^[10].

下载: 全尺寸图片幻灯片

图 3 量子效率随Al组分的变化

Fig. 3. Variation of the quantum efficiency with the Al components.

下载: 全尺寸图片幻灯片

图 4 GaAs层掺杂浓度对材料吸收系数的影响

Fig. 4. Effect of GaAs-layer doping concentration on the absorption coefficient of materials.

下载: 全尺寸图片幻灯片

图 5 量子效率随掺杂浓度的变化

Fig. 5. Variation of quantum efficiency with the doping concentration.

下载: 全尺寸图片幻灯片

图 6 国产与ITT光电阴极量子效率对比^[14,15]

Fig. 6. Comparison of domestic and ITT photoelectric cathode quantum efficiency ^[14,15].

下载: 全尺寸图片幻灯片

图 7 透射式阴极理论灵敏度随T_e的变化

Fig. 7. Variation of the sensitivity of the transmission cathode theory with T_e.

下载: 全尺寸图片幻灯片

图 8 透射式阴极理论灵敏度随L_d的变化

Fig. 8. Variation of the theoretical sensitivity of the transmission cathode with L_d.

下载: 全尺寸图片幻灯片

图 9 透射式阴极理论量子效率随T_e的变化

Fig. 9. Variation of quantum efficiency of transmission cathode theory with T_e.

下载: 全尺寸图片幻灯片

图 10 透射式阴极理论量子效率随L_d的变化

Fig. 10. Variation of quantum efficiency of transmission cathode theory with L_d.

下载: 全尺寸图片幻灯片

表 1 国内外透射式GaAs光电阴极光谱响应参数对比

Table 1. Comparison of response parameters of transmitted GaAs photocathode spectrum at home and abroad.

曲线	起始波长/nm	截止波长/nm	峰值波长/nm	量子效率峰值/%	积分灵敏度/(μA·lm^–1)
国内	450	930	710	45	2130
ITT	440	920	660	43	2330

下载: 导出CSV

表 2 透射式光电阴极性能参数的对比

Table 2. Comparison of the performance parameters of the transmitted photocathode.

类型	表面逸出概率	电子扩散长度/μm	后界面复合速率/(cm·s^–1)	发射层厚度/μm	窗口层厚度/μm	窗口层Al组分	阴极灵敏度/(μA·lm^–1)
国内	0.52	2.5	100000	1.5	0.4	0.7	2130
ITT	0.52	3.5	10000	1.3	0.4	1.3	2330

下载: 导出CSV

map

[1]	李晓峰, 何雁彬, 徐传平, 李金沙, 张勤东 2022 红外技术 44 1249 Li X F, He Y B, Xu C P, Li J S, Zhang Q D 2022 Infrared Technol. 44 1249
[2]	张益军 2022 红外技术 44 778 Zhang Y J 2022 Infrared Technol. 44 778
[3]	Li X D, Jiang Z G, Gu Q, Zhao M H, Guo L 2020 Chin. Phys. Lett. 37 012901 Google Scholar
[4]	杜晓晴 2005 博士学位论文 (南京: 南京理工大学) Du X Q 2005 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology
[5]	张益军 2012 博士学位论文 (南京: 南京理工大学) Zhang Y J 2012 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology
[6]	邹继军 2007 博士学位论文 (南京: 南京理工大学) Zou J J 2007 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology
[7]	赵静 2013 博士学位论文 (南京: 南京理工大学) Zhao J 2013 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology
[8]	邹继军, 常本康, 杨智 2007 56 2992 Google Scholar Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 Google Scholar
[9]	杨智, 邹继军, 常本康 2010 59 4290 Google Scholar Yang Z, Zou J J, Chang B K 2010 Acta Phys. Sin. 59 4290 Google Scholar
[10]	刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京: 电子工业出版社) Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Press of Electronic Industry
[11]	唐纳德·内曼著 (赵毅强, 姚素英, 解晓东译) 2005 半导体物理与器件 (北京: 电子工业出版社) Neamen D A (translated by Zhao Y Q, Yao S Y, Xie X D) 2005 Semiconductor Physics and Devices (Beijing: Electronic Industry Press
[12]	张嘎 2021 硕士学位论文 (南京: 南京理工大学) Zhang G 2021 M. S. Thesis (Nanjing: Nanjing University of Science and Technology
[13]	赵静, 张益军, 常本康, 熊雅娟, 张俊举, 石峰, 程宏昌, 崔东旭 2011 60 107802 Google Scholar Zhao J, Zhang Y J, Chang B K, Xiong Y J, Zhang J J, Shi F, Cheng H C, Cui D X 2011 Acta Phys. Sin. 60 107802 Google Scholar
[14]	石峰, 赵静, 程宏昌, 张益军, 熊雅娟, 常本康 2012 光谱学与光谱分析 32 297 Google Scholar Shi F, Zhao J, Cheng H C, Zhang Y J, Xiong Y J, Chang B K 2012 Spectrosc. Spectral Anal. 32 297 Google Scholar
[15]	赵静, 常本康, 张益军, 张俊举, 石峰, 程宏昌, 崔东旭 2012 61 037803 Google Scholar Zhao J, Chang B K, Zhang Y J, Zhang J J, Shi F, Cheng H C, Cui D X 2012 Acta Phys. Sin. 61 037803 Google Scholar
[16]	郭向阳 2011 硕士学位论文 (南京: 南京理工大学) Guo X Y 2011 M. S. Thesis (Nanjing: Nanjing University of Science and Technology
[17]	Feng C, Zhang Y J, Qian Y S, et al. 2016 Opt. Commun. 369 50 Google Scholar
[18]	Feng C, Zhang Y J, Qian Y S, Chang B K, Shi F, Jiao G C 2015 Opt. Express. 194 7888
[19]	冯琤, 张益军, 钱芸生 2015 中国科技论文 10 1916 Google Scholar Feng C, Zhang Y J, Qian Y S 2015 Chin. Sciencepaper 10 1916 Google Scholar
[20]	冯琤 2018 博士学位论文 (南京: 南京理工大学) Feng C 2018 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology

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