Linear magnetoresistance in topological insulator (Bi0.5Sb0.5)2Te3 thin films

Guan Tong; Teng Jing; Wu Ke-Hui; Li Yong-Qing

doi:10.7498/aps.64.077201

Abstract

Linear magnetoresistance (LMR) observed in a topological insulator {(Bi0.5Sb0.5)2Te3} thin film is systematically studied. LMR exists in very large ranges of temperature and magnetic field. It shows no trend toward saturation in the magnetic field of up to 18 T nor temperature dependence. LMR can be changed effectively by tuning the chemical potential through gate voltage. LMR shows a largest value when the chemical potential approaches to the Dirac point. These phenomena indicate that charge inhomogeneity is the origin of the LMR in this material.

Keywords:

Authors and contacts

1.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 91121003, 11374337), the National Basic Research Program of China(Grant No. 2012CB921703), and the Chinese Academy of Sciences.

References

[1]	Pippard A B 1989 Magnetoresistance in metals (Cambridge: Cambridge University Press)
[2]	Kapitza P 1928 Proc. R. Soc. London, Ser. A 119 358
[3]	Abrikosov A A 1969 JETP 29 746
[4]	Xu R, Husmann A, Rosenbaum T F, Saboungi M -L, Enderby J E, Littlewood P B 1997 Nature 390 57
[5]	Abrikosov A A 1998 Phys. Rev. B 58 2788
[6]	Parish M M, Littlewood P B 2003 Nature 426 162
[7]	Hu J S, Rosenbaum T F 2008 Nat. Mater. 76 97
[8]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[9]	Hasan M Z, Kane C L 2010 Rev. Mod. Phys. 82 3045
[10]	Qi X L, Zhang S C 2011 Rev. Mod. Phys. 83 1057
[11]	Cho S, Fuhrer M S 2008 Phys. Rev. B 77 081402
[12]	Ping J L, Yudhistira I, Ramakrishnan N, Cho S, Adam S, Fuhrer M S 2014 Phys. Rev. Lett. 113 047206
[13]	Jia Z Z, Zhang R, Han Q, Yan Q J, Zhu R, Yu D P, Wu X S 2014 Appl. Phys. Lett. 105 143103
[14]	Qu D X, Hor Y S, Xiong J, Cava R J, Ong N P 2010 Science 329 821
[15]	Zhang G H, Qin H J, Chen J, He X Y, Lu L, Li Y Q, Wu K H 2011 Adv. Funct. Mater. 21 2351
[16]	Tang H, Liang D, Qiu R L J, Gao X P A 2011 ACS Nano 5 7510
[17]	Wang J, DaSilva A M, Chang C Z, He K, Jain J K, Samarth N, Ma X C, Xue Q K, Chan M H W 2011 Phys. Rev. B 83 245438
[18]	He H T, Li B K, Liu H C, Guo X, Wang Z Y, Xie M H, Wang J N 2012 Appl. Phys. Lett. 100 032105
[19]	Gao B F, Gehring P, Burghard M, Kern K 2012 Appl. Phys. Lett. 100 212402
[20]	He X Y, Guan T, Wang X X, Feng B J, Cheng P, Chen L, Li Y Q, Wu K H 2012 Appl. Phys. Lett. 101 123111
[21]	Zhang S X, McDonald R D, Shekhter A, Bi Z X, Li Y, Jia X Q, Picraux S T 2012 Appl. Phys. Lett. 101 202403
[22]	Assaf B A, Cardinal T, Wei P, Katmis F, Moodera J S, Heiman D 2013 Appl. Phys. Lett. 102 012102
[23]	Zhao Y F, Chang C Z, Jiang Y, DaSilva A M, Sun Y, Wang H C, Xing Y, Wang Y, He K, Ma X C, Xue Q K, Wang J 2013 Sci. Rep. 3 3060
[24]	Tian J F, Chang C Z, Cao H L, He K, Ma X C, Xue Q K, Chen Y P 2014 Sci. Rep. 4 4859
[25]	Wang Z H, Yang L, Li X J, Zhao X T, Wang H L, Zhang Z D, Gao X P A 2014 Nano Lett. 14 6510
[26]	Wang H C, Liu H W, Chang C Z, Zuo H K, Zhao Y F, Sun Y, Xia Z C, He K, Ma X C, Xie X C, Xue Q K, Wang J 2014 Sci. Rep. 4 5817
[27]	Kong D S, Chen Y L, Cha J J, Zhang Q F, Analytis J G, Lai K J, Liu Z K, Hong S S, Koski K J, Mo S K, Hussain Z, Fisher I R, Shen Z X, Cui Y 2011 Nat. Nanotech. 6 705
[28]	Zhang J S, Chang C Z, Zhang Z C, Wen J, Feng X, Li K, Liu M H, He K, Wang L L, Chen X, Xue Q K, Ma X C, Wang Y Y 2011 Nat. Commun. 2 574
[29]	Neville R C, Hoeneisen B, Mead C A 1972 J. Appl. Phys. 43 2124
[30]	Caviglia A D, Gariglio S, Reyren N, Jaccard D, Schneider T, Gabay M, Thiel S, Hammerl G, Mannhart J, Triscone J M 2008 Nature 456 624
[31]	Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M, Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H, Li Y Q, Lu L 2010 Phys. Rev. Lett. 105 176602
[32]	Yang W M, Lin C J, Liao J, Li Y Q 2013 Chin. Phys. B 22 097202
[33]	Liu M H, Chang C Z, Zhang Z C, Zhang Y, Ruan W, He K, Wang L L, Chen X, Jia J F, Zhang S C, Xue Q K, Ma X C, Wang Y Y 2011 Phys. Rev. B 83 165440
[34]	Liu Y, Ma Z, Zhao Y F, Meenakshi S, Wang J 2013 Chin. Phys. B 22 067302
[35]	Chen J, He X Y, Wu K H, Ji Z Q, Lu L, Shi J R, Smet J H, Li Y Q 2011 Phys. Rev. B 83 241304
[36]	Lin C J, He X Y, Liao J, Wang X X, Sacksteder IV V, Yang W M, Guan T, Zhang Q M, Gu L, Zhang G Y, Zeng C G, Dai X, Wu K H, Li Y Q 2013 Phys. Rev. B 88 041307
[37]	Skinner B, Chen T R, Shklovskii B I 2013 J. Exp. Theor. Phys. 117 579
[38]	Wang C M, Lei X L 2012 Phys. Rev. B 86 035442
[39]	Martin J, Akerman N, Ulbricht G, Lohmann T, Smet J H, Klitzing K von, Yacoby A 2008 Nat. Phys. 4 144
[40]	Kastl C, Guan T, He X Y, Wu K H, Li Y Q, Holleitner A W 2012 Appl. Phys. Lett. 101 251110

Cited By

[1]	Pippard A B 1989 Magnetoresistance in metals (Cambridge: Cambridge University Press)
[2]	Kapitza P 1928 Proc. R. Soc. London, Ser. A 119 358
[3]	Abrikosov A A 1969 JETP 29 746
[4]	Xu R, Husmann A, Rosenbaum T F, Saboungi M -L, Enderby J E, Littlewood P B 1997 Nature 390 57
[5]	Abrikosov A A 1998 Phys. Rev. B 58 2788
[6]	Parish M M, Littlewood P B 2003 Nature 426 162
[7]	Hu J S, Rosenbaum T F 2008 Nat. Mater. 76 97
[8]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[9]	Hasan M Z, Kane C L 2010 Rev. Mod. Phys. 82 3045
[10]	Qi X L, Zhang S C 2011 Rev. Mod. Phys. 83 1057
[11]	Cho S, Fuhrer M S 2008 Phys. Rev. B 77 081402
[12]	Ping J L, Yudhistira I, Ramakrishnan N, Cho S, Adam S, Fuhrer M S 2014 Phys. Rev. Lett. 113 047206
[13]	Jia Z Z, Zhang R, Han Q, Yan Q J, Zhu R, Yu D P, Wu X S 2014 Appl. Phys. Lett. 105 143103
[14]	Qu D X, Hor Y S, Xiong J, Cava R J, Ong N P 2010 Science 329 821
[15]	Zhang G H, Qin H J, Chen J, He X Y, Lu L, Li Y Q, Wu K H 2011 Adv. Funct. Mater. 21 2351
[16]	Tang H, Liang D, Qiu R L J, Gao X P A 2011 ACS Nano 5 7510
[17]	Wang J, DaSilva A M, Chang C Z, He K, Jain J K, Samarth N, Ma X C, Xue Q K, Chan M H W 2011 Phys. Rev. B 83 245438
[18]	He H T, Li B K, Liu H C, Guo X, Wang Z Y, Xie M H, Wang J N 2012 Appl. Phys. Lett. 100 032105
[19]	Gao B F, Gehring P, Burghard M, Kern K 2012 Appl. Phys. Lett. 100 212402
[20]	He X Y, Guan T, Wang X X, Feng B J, Cheng P, Chen L, Li Y Q, Wu K H 2012 Appl. Phys. Lett. 101 123111
[21]	Zhang S X, McDonald R D, Shekhter A, Bi Z X, Li Y, Jia X Q, Picraux S T 2012 Appl. Phys. Lett. 101 202403
[22]	Assaf B A, Cardinal T, Wei P, Katmis F, Moodera J S, Heiman D 2013 Appl. Phys. Lett. 102 012102
[23]	Zhao Y F, Chang C Z, Jiang Y, DaSilva A M, Sun Y, Wang H C, Xing Y, Wang Y, He K, Ma X C, Xue Q K, Wang J 2013 Sci. Rep. 3 3060
[24]	Tian J F, Chang C Z, Cao H L, He K, Ma X C, Xue Q K, Chen Y P 2014 Sci. Rep. 4 4859
[25]	Wang Z H, Yang L, Li X J, Zhao X T, Wang H L, Zhang Z D, Gao X P A 2014 Nano Lett. 14 6510
[26]	Wang H C, Liu H W, Chang C Z, Zuo H K, Zhao Y F, Sun Y, Xia Z C, He K, Ma X C, Xie X C, Xue Q K, Wang J 2014 Sci. Rep. 4 5817
[27]	Kong D S, Chen Y L, Cha J J, Zhang Q F, Analytis J G, Lai K J, Liu Z K, Hong S S, Koski K J, Mo S K, Hussain Z, Fisher I R, Shen Z X, Cui Y 2011 Nat. Nanotech. 6 705
[28]	Zhang J S, Chang C Z, Zhang Z C, Wen J, Feng X, Li K, Liu M H, He K, Wang L L, Chen X, Xue Q K, Ma X C, Wang Y Y 2011 Nat. Commun. 2 574
[29]	Neville R C, Hoeneisen B, Mead C A 1972 J. Appl. Phys. 43 2124
[30]	Caviglia A D, Gariglio S, Reyren N, Jaccard D, Schneider T, Gabay M, Thiel S, Hammerl G, Mannhart J, Triscone J M 2008 Nature 456 624
[31]	Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M, Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H, Li Y Q, Lu L 2010 Phys. Rev. Lett. 105 176602
[32]	Yang W M, Lin C J, Liao J, Li Y Q 2013 Chin. Phys. B 22 097202
[33]	Liu M H, Chang C Z, Zhang Z C, Zhang Y, Ruan W, He K, Wang L L, Chen X, Jia J F, Zhang S C, Xue Q K, Ma X C, Wang Y Y 2011 Phys. Rev. B 83 165440
[34]	Liu Y, Ma Z, Zhao Y F, Meenakshi S, Wang J 2013 Chin. Phys. B 22 067302
[35]	Chen J, He X Y, Wu K H, Ji Z Q, Lu L, Shi J R, Smet J H, Li Y Q 2011 Phys. Rev. B 83 241304
[36]	Lin C J, He X Y, Liao J, Wang X X, Sacksteder IV V, Yang W M, Guan T, Zhang Q M, Gu L, Zhang G Y, Zeng C G, Dai X, Wu K H, Li Y Q 2013 Phys. Rev. B 88 041307
[37]	Skinner B, Chen T R, Shklovskii B I 2013 J. Exp. Theor. Phys. 117 579
[38]	Wang C M, Lei X L 2012 Phys. Rev. B 86 035442
[39]	Martin J, Akerman N, Ulbricht G, Lohmann T, Smet J H, Klitzing K von, Yacoby A 2008 Nat. Phys. 4 144
[40]	Kastl C, Guan T, He X Y, Wu K H, Li Y Q, Holleitner A W 2012 Appl. Phys. Lett. 101 251110

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Vol. 64, Issue 7 - 2015-04-05

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