拓扑绝缘体(Bi0.5Sb0.5)2Te3薄膜中的线性磁阻

关童; 滕静; 吴克辉; 李永庆

doi:10.7498/aps.64.077201

摘要

本文报道了拓扑绝缘体(Bi0.5Sb0.5)2Te3薄膜中线性磁阻问题的系统性研究工作. 此体系中, 线性磁阻在很宽的温度和磁场范围内出现: 磁场高达18 T时磁阻仍没有饱和趋势, 并且当温度不高于50 K时, 线性磁阻的大小对温度的变化不敏感. 栅压调控化学势可明显改变线性磁阻的大小. 当化学势接近狄拉克点时, 线性磁阻最为显著. 这些结果说明电荷分布的不均匀性是引起该材料线性磁阻的根源.

关键词:

拓扑绝缘体 /
薄膜 /
线性磁阻

Linear magnetoresistance (LMR) observed in a topological insulator {(Bi0.5Sb0.5)2Te3} thin film is systematically studied. LMR exists in very large ranges of temperature and magnetic field. It shows no trend toward saturation in the magnetic field of up to 18 T nor temperature dependence. LMR can be changed effectively by tuning the chemical potential through gate voltage. LMR shows a largest value when the chemical potential approaches to the Dirac point. These phenomena indicate that charge inhomogeneity is the origin of the LMR in this material.

Keywords:

作者及机构信息

1.
中国科学院物理研究所, 北京凝聚态物理国家实验室, 北京 100190

基金项目: 国家自然科学基金(批准号: 91121003, 11374337)、国家重点基础研究发展计划(973计划) (批准号: 2012CB921703)和中国科学院资助的课题.

Authors and contacts

1.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 91121003, 11374337), the National Basic Research Program of China(Grant No. 2012CB921703), and the Chinese Academy of Sciences.

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施引文献

[1]	Pippard A B 1989 Magnetoresistance in metals (Cambridge: Cambridge University Press)
[2]	Kapitza P 1928 Proc. R. Soc. London, Ser. A 119 358
[3]	Abrikosov A A 1969 JETP 29 746
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[5]	Abrikosov A A 1998 Phys. Rev. B 58 2788
[6]	Parish M M, Littlewood P B 2003 Nature 426 162
[7]	Hu J S, Rosenbaum T F 2008 Nat. Mater. 76 97
[8]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[9]	Hasan M Z, Kane C L 2010 Rev. Mod. Phys. 82 3045
[10]	Qi X L, Zhang S C 2011 Rev. Mod. Phys. 83 1057
[11]	Cho S, Fuhrer M S 2008 Phys. Rev. B 77 081402
[12]	Ping J L, Yudhistira I, Ramakrishnan N, Cho S, Adam S, Fuhrer M S 2014 Phys. Rev. Lett. 113 047206
[13]	Jia Z Z, Zhang R, Han Q, Yan Q J, Zhu R, Yu D P, Wu X S 2014 Appl. Phys. Lett. 105 143103
[14]	Qu D X, Hor Y S, Xiong J, Cava R J, Ong N P 2010 Science 329 821
[15]	Zhang G H, Qin H J, Chen J, He X Y, Lu L, Li Y Q, Wu K H 2011 Adv. Funct. Mater. 21 2351
[16]	Tang H, Liang D, Qiu R L J, Gao X P A 2011 ACS Nano 5 7510
[17]	Wang J, DaSilva A M, Chang C Z, He K, Jain J K, Samarth N, Ma X C, Xue Q K, Chan M H W 2011 Phys. Rev. B 83 245438
[18]	He H T, Li B K, Liu H C, Guo X, Wang Z Y, Xie M H, Wang J N 2012 Appl. Phys. Lett. 100 032105
[19]	Gao B F, Gehring P, Burghard M, Kern K 2012 Appl. Phys. Lett. 100 212402
[20]	He X Y, Guan T, Wang X X, Feng B J, Cheng P, Chen L, Li Y Q, Wu K H 2012 Appl. Phys. Lett. 101 123111
[21]	Zhang S X, McDonald R D, Shekhter A, Bi Z X, Li Y, Jia X Q, Picraux S T 2012 Appl. Phys. Lett. 101 202403
[22]	Assaf B A, Cardinal T, Wei P, Katmis F, Moodera J S, Heiman D 2013 Appl. Phys. Lett. 102 012102
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[24]	Tian J F, Chang C Z, Cao H L, He K, Ma X C, Xue Q K, Chen Y P 2014 Sci. Rep. 4 4859
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[34]	Liu Y, Ma Z, Zhao Y F, Meenakshi S, Wang J 2013 Chin. Phys. B 22 067302
[35]	Chen J, He X Y, Wu K H, Ji Z Q, Lu L, Shi J R, Smet J H, Li Y Q 2011 Phys. Rev. B 83 241304
[36]	Lin C J, He X Y, Liao J, Wang X X, Sacksteder IV V, Yang W M, Guan T, Zhang Q M, Gu L, Zhang G Y, Zeng C G, Dai X, Wu K H, Li Y Q 2013 Phys. Rev. B 88 041307
[37]	Skinner B, Chen T R, Shklovskii B I 2013 J. Exp. Theor. Phys. 117 579
[38]	Wang C M, Lei X L 2012 Phys. Rev. B 86 035442
[39]	Martin J, Akerman N, Ulbricht G, Lohmann T, Smet J H, Klitzing K von, Yacoby A 2008 Nat. Phys. 4 144
[40]	Kastl C, Guan T, He X Y, Wu K H, Li Y Q, Holleitner A W 2012 Appl. Phys. Lett. 101 251110

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