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Two-color quantum well infrared photodetectors (QWIPs) with two stacks of QW series have been grown by molecular beam epitaxy and processed into mesa structure devices with only two ohmic contacts by photolithography and wet chemical etching. By changing QWIP parameters, including barrier height, well width, doping level and period number, the total bias voltage can be distributed to the two stacks in such a way that the stacked structure will show different photoresponse characteristics. The photocurrent spectrum measurements demonstrate that sample 1 can work alternately between the two atmospheric windows of 3—5 μm and 8—12 μm by tuning the voltage, while sample 2 can photorespond simultaneously to the irradiation of the two atmospheric windows. In this paper, the physics behind the two-contact type of QWIP is discussed. The voltage tunability and the simultaneous photoresponse are attributed to the change of photoconductive gain with the bias voltage and the distribution of the total bias between the two series. We here focus the discussion on the voltage tunability of sample 1. Compared with the three-contact-per-pixel structure, two-contact-per-pixel structure can greatly facilitate the dual-band focal plane array (FPA) device fabrication and increase the FPA fill factor.
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Keywords:
- voltage tunability /
- simultaneous response /
- quantum well infrared photodetector /
- dual-band
[1] Gunapala S D, Bandara S V, Liu J K, Mumolo J M, Hill C J, Rafol S B, Salazar D, Woolaway J, LeVan P D, Tidrow M Z 2007 Infrared Phys. Technol. 50 217
[2] Nedelcu A, Costard E, Bois P, Marcadet X 2007 Infrared Phys. Technol. 50 227
[3] Sundaram M, Wang S C, Taylor M F, Reisinger A, Milne G L, Reiff K B, Rose R E, Martin R R 2001 Infrared Phys. Technol. 42 301
[4] Li N, Yuan X Z, Li N, Lu W, Li Z F, Dou H F, Shen X C 2000 Acta. Phys. Sin. 49 797 (in Chinese) [李 娜、 袁先漳、 李 宁、 陆 卫、 李志峰、 窦红飞、 沈学础 2000 49 797]
[5] Choi K K, Levine B F, Bethea C G, Walker J, Maik R J 1989 Phys. Rev. B 39 8029
[6] Levine B F, Bethea C G, Shen V O, Malik R J 1990 Appl. Phys. Lett. 57 383
[7] Kheng K, Ramsteiner M, Schneider H, Ralston J C, Fuchs F, Koidl P 1992 Appl. Phys. Lett. 61 666
[8] Martinet E, Luc F, Rosencher E, Bois P, Delaitre S 1992 Appl. Phys. Lett. 60 895
[9] Berger V, Vodjdani N, Bois P, Vinter B, Delaitre S 1992 Appl. Phys. Lett. 61 1898
[10] Liu H C, Li J M, Thompson J R, Wasilewski Z R, Buchanan M, Simmons J G 1993 IEEE Electron Devices Lett. 14 566
[11] Eker S U, Kaldirim M, Arslan Y, Besikci C 2008 IEEE Electron Devices Lett. 29 1121
[12] Huo Y H, Ma W Q, Zhang Y H, Chen L H, Shi Y L 2010 Applied Physics A 100 415
[13] Liu X Y, Ma W Q, Zhang Y H, Huo Y H, Chong M, Chen L H 2010 Acta. Phys. Sin. 59 5720 (in Chinese) [刘小宇、 马文全、 张艳华、 霍永恒、 种 明、 陈良惠 2010 59 5720]
[14] Liu E K, Zhu B S, Luo J S 2006 Semiconductor Physics (6th ed) (Beijing: Publishing House of Electronics Industry) p139—141 (in Chinese) [刘恩科、 朱秉生、 罗晋生 2006 半导体物理徐 (北京:电子工业出版社) 第139—141页]
[15] Schneider H, Mermelstein C, Rehm R, Schonbein C, Sa’ar A, Walther M 1998 Phys. Rev. B 57 R15096
[16] Liu H C, Capasso F 2000 Semicongductors and Semimetals Vol. 62: Intersubband Transitions in Quantum Wells: Physics and Device Applications 1 (1st ed) (San Diego: Academic Press) p146—147
[17] Levinshtein M, Rumyantsev S 1999 Handbook Series on Semiconductor Parameters Vol. 2: Ternary and Quaternary III—V Semiconductors (Singapore: World Scientific Publishing Co. Pte. Ltd)p1—34, 62—86
[18] Ramsey W Y, Alishouse J C 1968 Infrared Physics 8 143
[19] Zolotarev V M, 2007 Optics and Spectroscopy 103 592
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[1] Gunapala S D, Bandara S V, Liu J K, Mumolo J M, Hill C J, Rafol S B, Salazar D, Woolaway J, LeVan P D, Tidrow M Z 2007 Infrared Phys. Technol. 50 217
[2] Nedelcu A, Costard E, Bois P, Marcadet X 2007 Infrared Phys. Technol. 50 227
[3] Sundaram M, Wang S C, Taylor M F, Reisinger A, Milne G L, Reiff K B, Rose R E, Martin R R 2001 Infrared Phys. Technol. 42 301
[4] Li N, Yuan X Z, Li N, Lu W, Li Z F, Dou H F, Shen X C 2000 Acta. Phys. Sin. 49 797 (in Chinese) [李 娜、 袁先漳、 李 宁、 陆 卫、 李志峰、 窦红飞、 沈学础 2000 49 797]
[5] Choi K K, Levine B F, Bethea C G, Walker J, Maik R J 1989 Phys. Rev. B 39 8029
[6] Levine B F, Bethea C G, Shen V O, Malik R J 1990 Appl. Phys. Lett. 57 383
[7] Kheng K, Ramsteiner M, Schneider H, Ralston J C, Fuchs F, Koidl P 1992 Appl. Phys. Lett. 61 666
[8] Martinet E, Luc F, Rosencher E, Bois P, Delaitre S 1992 Appl. Phys. Lett. 60 895
[9] Berger V, Vodjdani N, Bois P, Vinter B, Delaitre S 1992 Appl. Phys. Lett. 61 1898
[10] Liu H C, Li J M, Thompson J R, Wasilewski Z R, Buchanan M, Simmons J G 1993 IEEE Electron Devices Lett. 14 566
[11] Eker S U, Kaldirim M, Arslan Y, Besikci C 2008 IEEE Electron Devices Lett. 29 1121
[12] Huo Y H, Ma W Q, Zhang Y H, Chen L H, Shi Y L 2010 Applied Physics A 100 415
[13] Liu X Y, Ma W Q, Zhang Y H, Huo Y H, Chong M, Chen L H 2010 Acta. Phys. Sin. 59 5720 (in Chinese) [刘小宇、 马文全、 张艳华、 霍永恒、 种 明、 陈良惠 2010 59 5720]
[14] Liu E K, Zhu B S, Luo J S 2006 Semiconductor Physics (6th ed) (Beijing: Publishing House of Electronics Industry) p139—141 (in Chinese) [刘恩科、 朱秉生、 罗晋生 2006 半导体物理徐 (北京:电子工业出版社) 第139—141页]
[15] Schneider H, Mermelstein C, Rehm R, Schonbein C, Sa’ar A, Walther M 1998 Phys. Rev. B 57 R15096
[16] Liu H C, Capasso F 2000 Semicongductors and Semimetals Vol. 62: Intersubband Transitions in Quantum Wells: Physics and Device Applications 1 (1st ed) (San Diego: Academic Press) p146—147
[17] Levinshtein M, Rumyantsev S 1999 Handbook Series on Semiconductor Parameters Vol. 2: Ternary and Quaternary III—V Semiconductors (Singapore: World Scientific Publishing Co. Pte. Ltd)p1—34, 62—86
[18] Ramsey W Y, Alishouse J C 1968 Infrared Physics 8 143
[19] Zolotarev V M, 2007 Optics and Spectroscopy 103 592
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