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Using direct-current reactive magnetron sputtering technique, a series of silver oxide (AgxO) films were deposited at a substrate temperature of 250 ℃ by modifying the reactive pressure (RP). Effect of the RP on the film structure and optical properties was investigated by X-ray diffractometry, energy dispersive spectroscopy and spectrophotometry. An evolution of the phase structure from biphased (AgO+Ag2O) to single-phased (Ag2O), and then to biphased (Ag2O+AgO) occurred with the RP increasing from 0.5 to 3.5 Pa for the AgxO films. Single-phase Ag2O film, specially, was deposited at RP=2.5 Pa, which was capable of lowering the threshold of thermal decomposition temperature of the AgxO film. The film transmissivity in transparent region increased with the RP increasing, while the film reflectivity and absorptivity decreased with the RP increasing. This result is attributed to the evolution of the phase structure and the decrease of the film thickness. The absorption edge of the biphased (AgO+Ag2O) AgxO film was located near 2.75 eV, whereas the absorption edge of the single-phase (Ag2O) and Ag2O-dominated biphased (Ag2O+AgO) AgxO film was located near 2.5 eV.
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Keywords:
- silver oxide film /
- direct-current reactive magnetron sputtering /
- X-ray diffraction spectra /
- optical properties
[1] Passaniti J, Megahed S A 1995 Handbook of Batteries (New York: McGraw-Hill) p122
[2] Smith D F, Graybill G R, Grubbs R K, Gucinskl J A 1997 J. Power Sources 65 47
[3] Büchel D, Mihalcea C, Fukaya T, Atoda N, Tominaga J, Kikukawa T, Fuji H 2001 Appl. Phys. Lett. 79 620
[4] Tominaga J 2003 J. Phys: Condens. Matt. 15 1101
[5] Pierson J F, Wiederkehr D, Billard A 2005 Thin Solid Films 478 196
[6] Varkey A J, Fort A F 1993 Sol. Energy Matt. Sol. Cells 29 253
[7] Rivers S B, Bernhardt G, Wright M W, Frankel D J, Steeves M M, Lad R J 2007 Thin Solid Films 515 8684
[8] Fortin E, Weichman F L 1964 Phys. Status Solidi. 5 515
[9] Pierson J F, Rousselot C 2005 Surf. Coat. Technol. 200 276
[10] Gao X Y, Wang S Y, Li J, Zheng Y X, Zhang R J, Zhou P, Yang Y M, Chen L Y 2004 Thin Solid Films 455-456 438
[11] Chiu Y, Rambabu U, Hsu M H, Shieh H P D, Chen C Y, Lin H H 2003 J. Appl. Phys. 94 1996
[12] Tominaga J, Nakano T, Atoda N 1992 Extended abstracts of the 39th Spring Meeting of the Japan Society of Applied Physics and Related Societies (Narashino) p 30
[13] Tominaga J, Nakano T , Atoda N 1998 Appl. Phys. Lett. 73 2078
[14] Fukaya T, Tominaga J, Nakano T, Atoda N 1999 Appl. Phys. Lett. 75 3114
[15] Cai D P, Wei C L 2000 Appl . Phys. Lett. 77 1413
[16] Fuji H, Tominaga J, Men L, Nakano T, Katayama H, Atoda N 2000 Jpn. J. Appl. Phys. 39 980
[17] Kim J, Fuji H, Yamakama Y, Nakano T, Büchel D, Tominaga J, Atoda N 2001 Jpn. J. Appl. Phys. 40 1634
[18] Zhang X Y, Pan X Y, Zhang Q F, Xu B X, Jiang H B, Liu C L, Gong Q H, Wu J L 2003 Acta. Phys.Chem. Sin. 19 203 (in Chinese) [张西尧、 潘新宇、 张琦锋、 许北雪、 蒋红兵、 刘春玲、 龚旗煌、 吴锦雷 2003 物理化学学报 19 203]
[19] Qiu J H, Zhou P, Gao X Y,Yu J N, Wang S Y, Li J, Zheng X Y, Yang Y M, Song Q H, Chen L Y 2005 J. Korean Phys. Soc. 46 S269
[20] Gao X Y, Feng H L, Ma J M, Zhang Z Y,Lu J X, Chen Y S, Yang S E, Gu J H 2010 Physica B 405 1922
[21] Gao XY, Feng H L, Zhang Z Y, Ma J M, Lu J X 2010 Chin. Phys. Lett. 27 026804
[22] Gao X Y, Feng H L, Ma J M, Zhang Z Y 2010 Chin. Phys. B 9 090701
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[1] Passaniti J, Megahed S A 1995 Handbook of Batteries (New York: McGraw-Hill) p122
[2] Smith D F, Graybill G R, Grubbs R K, Gucinskl J A 1997 J. Power Sources 65 47
[3] Büchel D, Mihalcea C, Fukaya T, Atoda N, Tominaga J, Kikukawa T, Fuji H 2001 Appl. Phys. Lett. 79 620
[4] Tominaga J 2003 J. Phys: Condens. Matt. 15 1101
[5] Pierson J F, Wiederkehr D, Billard A 2005 Thin Solid Films 478 196
[6] Varkey A J, Fort A F 1993 Sol. Energy Matt. Sol. Cells 29 253
[7] Rivers S B, Bernhardt G, Wright M W, Frankel D J, Steeves M M, Lad R J 2007 Thin Solid Films 515 8684
[8] Fortin E, Weichman F L 1964 Phys. Status Solidi. 5 515
[9] Pierson J F, Rousselot C 2005 Surf. Coat. Technol. 200 276
[10] Gao X Y, Wang S Y, Li J, Zheng Y X, Zhang R J, Zhou P, Yang Y M, Chen L Y 2004 Thin Solid Films 455-456 438
[11] Chiu Y, Rambabu U, Hsu M H, Shieh H P D, Chen C Y, Lin H H 2003 J. Appl. Phys. 94 1996
[12] Tominaga J, Nakano T, Atoda N 1992 Extended abstracts of the 39th Spring Meeting of the Japan Society of Applied Physics and Related Societies (Narashino) p 30
[13] Tominaga J, Nakano T , Atoda N 1998 Appl. Phys. Lett. 73 2078
[14] Fukaya T, Tominaga J, Nakano T, Atoda N 1999 Appl. Phys. Lett. 75 3114
[15] Cai D P, Wei C L 2000 Appl . Phys. Lett. 77 1413
[16] Fuji H, Tominaga J, Men L, Nakano T, Katayama H, Atoda N 2000 Jpn. J. Appl. Phys. 39 980
[17] Kim J, Fuji H, Yamakama Y, Nakano T, Büchel D, Tominaga J, Atoda N 2001 Jpn. J. Appl. Phys. 40 1634
[18] Zhang X Y, Pan X Y, Zhang Q F, Xu B X, Jiang H B, Liu C L, Gong Q H, Wu J L 2003 Acta. Phys.Chem. Sin. 19 203 (in Chinese) [张西尧、 潘新宇、 张琦锋、 许北雪、 蒋红兵、 刘春玲、 龚旗煌、 吴锦雷 2003 物理化学学报 19 203]
[19] Qiu J H, Zhou P, Gao X Y,Yu J N, Wang S Y, Li J, Zheng X Y, Yang Y M, Song Q H, Chen L Y 2005 J. Korean Phys. Soc. 46 S269
[20] Gao X Y, Feng H L, Ma J M, Zhang Z Y,Lu J X, Chen Y S, Yang S E, Gu J H 2010 Physica B 405 1922
[21] Gao XY, Feng H L, Zhang Z Y, Ma J M, Lu J X 2010 Chin. Phys. Lett. 27 026804
[22] Gao X Y, Feng H L, Ma J M, Zhang Z Y 2010 Chin. Phys. B 9 090701
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