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In the High-power InGaN/GaN-based LED structures, p-AlGaN layer plays a role as electron blocking layer. In this paper, GaN/InGaN-based LED have been grown on sapphire by metal organic chemical vapor deposition (MOCVD), and the p-type doping mechanism and structural optimization of AlGaN layer were studied. The ways to change AlGaN components have been discussed. We found that the growth temperature, growth pressure and flow TMAl (mole ratio) have strong effect on the Al components through different mechanisms. In the AlGaN electron blocking layer, the Al composition is between 10%—30% and the electron could be well limited to the quantum well region, maintaining a high quality crystal material. The p-type doping efficiency of AlGaN layer is low, and there is a magnesium droop problem due to lack of hole injection. A new growth method is suggestece to solve the problem. Grown under optimal conditions, the p-type AlGaN inserted in a LED structure greatly improves the output optical power of LED device.
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Keywords:
- GaN-based /
- LED /
- Al composition /
- electron blocking layer
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[3] Zhao D G, Zhou M, Zuo S H 2007 Acta Phys. Sin. 56 5513 (in Chinese)[赵德刚、 周 梅、 左淑华 2007 56 5513]
[4] Xavier Breniere, Main Manissadjian, Michel Vuillermet 2005 SPIE 5783 21
[5] Cauquil J M, Martin J Y, Brains P, Benschop T 2003 SPIE 4820 52
[6] Hiroyuku Kiyota, Minom Kobayashi, Hiroshi Aka 1997 SPIE 2268 150
[7] Duan H T, Hao Y, Xu Z H, Zhang J C, Zhang Z F, Zhu Q W 2009 Chin. Phys. B 18 5457
[8] Chen J F, Hao Y 2009 Chin. Phys. B 18 5451
[9] Makino O, Nakamura K, Tachibana A, Tokunaga H, Akutsu N, Matsumoto K 2000 Applied Surface Science 159 374
[10] Shih C F, Chen N C, Lin S Y, Liu K S 2005 Appl. Phys. Lett. 86 211103
[11] Bremser M D, Perry W G, Zheleva T 1996 J. Nitride Semicond Res. 1 8
[12] Liu N X, Wang H B, Liu J P, Niu N H, Han J, Shen G D 2006 Acta. Phys. Sin. 55 1424 ( in Chinese) [刘乃鑫、 王怀兵、 刘建平、 牛南辉、 韩 军、 沈光地 2006 55 1424]
[13] Gao Z Y, Gu W P, Hao Y, Li P X, Zhang J C 2009 Chin. Phys. B 18 4970
[14] Chen G F, Jiang D S, Liu Z S, Wang H, Wang Y T, Wu Y X, Yang H, Zhang S M, Zhao D G, Zhu J 2009 Chin. Phys. B 18 4413
[15] Feng Q, Hao Y, Wang F X, 2004 Acta Phys. Sin. 53 3587 (in Chinese)[冯 倩、 郝 跃、 王峰祥 2004 53 3587]
[16] Schubert E F 2003 Light-Emitting Diodes (Cambridge:Cambridge University Press)
[17] Han S H, Lee D Y, Lee S J, Cho C Y, Kwon M K, Lee S P, Noh D Y, Kim D J, Kim Y C, Park S J 2009 Appl. Phys. Lett. 94 231123
[18] Liu B, Yuan F P, Yin J Y, Liu Y B, Feng Z, Feng Z H 2008 Micro Nano Elec. Tech. 45 639
[19] Kozaodoy P, Xing H, Denbaars S P, Mishra U K, Saxler A, Perrin R, Elhamri S, MitchelW C 2000 J. Appl. Phys. 87 1832
[20] Lachab M, Youn D H, Fareed R S Q, Wang T, Sakai S 2000 Solid-State Electron 44 1669
[21] Xing Y H, Han J,Deng J, Li J J, Xu C, Shen G D 2010 Acta Phys. sin. 59 1233 (in Chinese) [邢艳辉、 韩 军、 邓 军、 李建军、 徐 晨、 沈光地 2010 59 1233]
[22] Liu B, Zhang R, Xie Z L, Zhen Y D, Gong H M 2007 Laser ＆ Infrared 37 964
[23] Mihopoulos T G, Vijay Gupta, Jensen K F 1998 J. Cryst Growth 195 733
[24] Briot O, Alexis J P, Gil B 1996 Mater. Res. Soc. Symp. Proc. 395 207
[25] Han J, Figiel J J, Crawford M H 1998 J. Crystal Growth 195 291
[26] Zhao D G, Yang H, Liang J W, Li X Y, Gong H M 2005 Laser & Infrared 35 873
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[1] Pimputkar S, Speck J S, DenBaars S P, Nakamura S 2009 Nature Photonics 3 180
[2] Chen H, Ding G J ,Guo L W, Jia H Q, Liu J, Liu X Y, Lv L, Tan C L, Xing Z G, Zhou JM, Zhou Z T2007 Acta Phys. Sin. 56 6013 (in Chinese) [陈 弘、 丁国建、 郭丽伟、 贾海强、 刘 建、 刘新宇、 吕 力、 谭长林、 邢志刚、 周均铭、 周忠堂 2007 56 6013]
[3] Zhao D G, Zhou M, Zuo S H 2007 Acta Phys. Sin. 56 5513 (in Chinese)[赵德刚、 周 梅、 左淑华 2007 56 5513]
[4] Xavier Breniere, Main Manissadjian, Michel Vuillermet 2005 SPIE 5783 21
[5] Cauquil J M, Martin J Y, Brains P, Benschop T 2003 SPIE 4820 52
[6] Hiroyuku Kiyota, Minom Kobayashi, Hiroshi Aka 1997 SPIE 2268 150
[7] Duan H T, Hao Y, Xu Z H, Zhang J C, Zhang Z F, Zhu Q W 2009 Chin. Phys. B 18 5457
[8] Chen J F, Hao Y 2009 Chin. Phys. B 18 5451
[9] Makino O, Nakamura K, Tachibana A, Tokunaga H, Akutsu N, Matsumoto K 2000 Applied Surface Science 159 374
[10] Shih C F, Chen N C, Lin S Y, Liu K S 2005 Appl. Phys. Lett. 86 211103
[11] Bremser M D, Perry W G, Zheleva T 1996 J. Nitride Semicond Res. 1 8
[12] Liu N X, Wang H B, Liu J P, Niu N H, Han J, Shen G D 2006 Acta. Phys. Sin. 55 1424 ( in Chinese) [刘乃鑫、 王怀兵、 刘建平、 牛南辉、 韩 军、 沈光地 2006 55 1424]
[13] Gao Z Y, Gu W P, Hao Y, Li P X, Zhang J C 2009 Chin. Phys. B 18 4970
[14] Chen G F, Jiang D S, Liu Z S, Wang H, Wang Y T, Wu Y X, Yang H, Zhang S M, Zhao D G, Zhu J 2009 Chin. Phys. B 18 4413
[15] Feng Q, Hao Y, Wang F X, 2004 Acta Phys. Sin. 53 3587 (in Chinese)[冯 倩、 郝 跃、 王峰祥 2004 53 3587]
[16] Schubert E F 2003 Light-Emitting Diodes (Cambridge:Cambridge University Press)
[17] Han S H, Lee D Y, Lee S J, Cho C Y, Kwon M K, Lee S P, Noh D Y, Kim D J, Kim Y C, Park S J 2009 Appl. Phys. Lett. 94 231123
[18] Liu B, Yuan F P, Yin J Y, Liu Y B, Feng Z, Feng Z H 2008 Micro Nano Elec. Tech. 45 639
[19] Kozaodoy P, Xing H, Denbaars S P, Mishra U K, Saxler A, Perrin R, Elhamri S, MitchelW C 2000 J. Appl. Phys. 87 1832
[20] Lachab M, Youn D H, Fareed R S Q, Wang T, Sakai S 2000 Solid-State Electron 44 1669
[21] Xing Y H, Han J,Deng J, Li J J, Xu C, Shen G D 2010 Acta Phys. sin. 59 1233 (in Chinese) [邢艳辉、 韩 军、 邓 军、 李建军、 徐 晨、 沈光地 2010 59 1233]
[22] Liu B, Zhang R, Xie Z L, Zhen Y D, Gong H M 2007 Laser ＆ Infrared 37 964
[23] Mihopoulos T G, Vijay Gupta, Jensen K F 1998 J. Cryst Growth 195 733
[24] Briot O, Alexis J P, Gil B 1996 Mater. Res. Soc. Symp. Proc. 395 207
[25] Han J, Figiel J J, Crawford M H 1998 J. Crystal Growth 195 291
[26] Zhao D G, Yang H, Liang J W, Li X Y, Gong H M 2005 Laser & Infrared 35 873
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