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Gallium nitride (GaN) and its family of materials (including GaN, InN, AlN and their alloys) are known as the third generation of semiconductor, which has important applications in optoelectronics and microelectronics. In the structure of GaN-based high electron mobility transistor (HEMT) device, there is a relatively large conduction band offset in the AlGaN/GaN heterojunction structure, and it can produce a strong spontaneous and piezoelectric polarization effect in the vicinity of the heterojunction, which can also accumulate high concentrations of two-dimensional electron gas (2DEG) under the condition of no need of intentionally doping at the interface. The surface of Heterojunction AlGaN/GaN interface will form a 2DEG channel, and the 2DEG in potential well is controlled by the gate voltage, also the 2DEG layer is very close to the surface, which is sensitive to the state of the surface. When the surface state changes, it can cause a change in the 2DEG density, thus the concentration of 2DEG can be adjusted by changing the surface states, thereby changing the current between the source and drain. GaN-based HEMT serves as a gate control device, which has a high concentration of 2DEG and is sensitive to the surface state at the AlGaN/GaN heterojunction. According to the basic structure and advantages of the GaN-based HEMT device, the ferroelectric thin film PZT is deposited on the metal gate serving as a light sensitive layer. When the light is incident on the gate, the photo-sensing layer PZT generates the photovoltaic effect, which causes the surface charge of the photosensitive layer to change, and also causes the 2DEG to change, so the input current changes. In this paper, firstly, a new “M/F/M/S” structure is proposed by introducing a photosensitive material PZT on a GaN-based HEMT gate electrode and combining the PZT of a ferroelectric thin film with photovoltaic effect. Secondly, the HEMT device is fabricated on the AlGaN/GaN epitaxial wafer of sapphire substrate, and the photosensitive unit PZT is prepared on the gate, and thus the HEMT device with photosensitive is realized. Finally, the carrier concentration in the channel is regulated by the photovoltaic effect of PZT and 365 nm UV and visible light are detected through changing the source-drain current. The comparative tests under the conditions with and without a photosensitive gate HEMT device show that when the voltage Vgs is smaller, the saturation drain-source current Ids measured under the irradiation of visible light in the former condition is not reduced compared with that in the latter condition, and the increment of Ids measured in the former condition is 5.2 mA larger than in the latter condition. Therefore it can be seen that the PZT can act on the gate GaN-based HEMT device under the irradiation of visible and ultraviolet light and adjust the channel current.
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Keywords:
- high electron mobility transistor /
- lead zirconate titanate /
- photo-sensitive grid /
- light detection
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[2] Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
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[4] Zhou M, Li C Y, Zhao D G 2015 Chin. J. Lumin. 36 1034 (in Chinese) [周梅, 李春燕, 赵德刚 2015 发光学报 36 1034]
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[10] Gao Q N, Zhu Y, Wang J G, Yang J H 2016 Proceedings of the 14th International Asia Confererece on Industrial Engineering and Management Innovation Tianjin, China, July 25-26, 2015 p297
[11] Fu H, Yang L, Shang Z G, Yang Y P 2013 Electronics World Infrared Light Communication Device 18 116 (in Chinese) [付辉, 阳璐, 尚治国, 杨栎平 2013 电子世界 18 116]
[12] Xu K, Xu C, Guo W, Xie Y Y 2016 Semicond. Photoelectr. 1 30 (in Chinese) [许坤, 徐晨, 郭旺, 解意洋 2016 半导体光电 1 30]
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[18] Li F 2015 M. S. Thesis (Harbin: Harbin Institute of Technology) (in Chinese) [李飞 2015 硕士学位论文 (哈尔滨: 哈尔滨工业大学)]
[19] Li J H 2009 M. S. Thesis (Shanxi: North University of China) (in Chinese) [李珺泓 2009 硕士学位论文 (山西: 中北大学)]
[20] Wang C, Zhang J C, Hao Y, Yang Y 2006 Chin. J. Semicond. 27 1436 (in Chinese) [王冲, 张进城, 郝跃, 杨燕 2006 半导体学报 27 1436]
[21] Neamen D H (translated by Zhao Y Q, Yao S Y, Xie X D) 2010 Semiconductor Physics and Devices: Basic Principles (Beijing: Electronics Industry Press) p211, 212 (in Chinese) [尼曼 D H 著 (赵毅强, 姚素英, 解晓东 译) 2010 半导体物理与器件(北京: 电子工业出版社)第211, 212页]
[22] Qiao H, Yuan J, Xu Z Q, Che C Y, Lin S H, Wang Y S, Song J C, Liu Y, Khan Q, Hoh H Y, Pan C X, Li S J, Bao Q L 2015 ACS Nano 9 1886
[23] Liu Y H, Cao W, Li S J, Li Y, Sun S C, Fu K, Chen C Q, Zhang B S 2015 Chin. J. Lumin. 36 1167 (in Chinese) [刘翌寒, 曹伟, 李绍娟, 李洋, 孙世闯, 付凯, 陈长清, 张宝顺 2015 发光学报 36 1167]
[24] Sun Q 2012 M. S. Thesis (Shanghai: East China Normal University) (in Chinese) [孙倩 2012 硕士学位论文 (上海: 华东师范大学)]
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[1] Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese) [谷文萍, 郝跃, 张进城, 王冲, 冯倩, 马晓华 2009 58 511]
[2] Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
[3] Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, L L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013 (in Chinese) [周忠堂, 郭丽伟, 邢志刚, 丁国建, 谭长林, 吕力, 刘建, 刘新宇, 贾海强, 陈弘, 周均铭 2007 56 6013]
[4] Zhou M, Li C Y, Zhao D G 2015 Chin. J. Lumin. 36 1034 (in Chinese) [周梅, 李春燕, 赵德刚 2015 发光学报 36 1034]
[5] Matsunaga T, Hosokawa T, Umetani Y, Takayama R, Kanno I 2002 Phys. Rev. B 66 064102
[6] Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A, Stutzmann M 2000 Appl. Phys. 87 334
[7] Lin Z J, Lu W, Lee J 2003 Appl. Phys. Lett. 82 4364
[8] Yu N, Wang H H, Liu F F, Du Z J, Wang Y H, Song H H, Zhu Y X, Sun J 2015 Chin. J. Lumin. 36 1178 (in Chinese) [于宁, 王红航, 刘飞飞, 杜志娟, 王岳华, 宋会会, 朱彦旭, 孙捷 2015 发光学报 36 1178]
[9] Zheng K 2016 M. S. Thesis (Hefei: Hefei University of Technology) (in Chinese) [郑坤 2016 硕士学位论文 (合肥: 合肥工业大学)]
[10] Gao Q N, Zhu Y, Wang J G, Yang J H 2016 Proceedings of the 14th International Asia Confererece on Industrial Engineering and Management Innovation Tianjin, China, July 25-26, 2015 p297
[11] Fu H, Yang L, Shang Z G, Yang Y P 2013 Electronics World Infrared Light Communication Device 18 116 (in Chinese) [付辉, 阳璐, 尚治国, 杨栎平 2013 电子世界 18 116]
[12] Xu K, Xu C, Guo W, Xie Y Y 2016 Semicond. Photoelectr. 1 30 (in Chinese) [许坤, 徐晨, 郭旺, 解意洋 2016 半导体光电 1 30]
[13] Zhang H B, Yao J D, Shao J M, Li H, Li S W, Bao D H, Wang C X, Yang G W 2014 Sci. Rep. 4 5876
[14] Wang Z J, Chu J R, Maeda R, Kokawaa H 2002 Thin Solid Films 416 66
[15] Zhu Y X, Wang Y H, Song H H, Li L L, Shi D 2016 Chin. J. Lumin. 37 1545 (in Chinese) [朱彦旭, 王岳华, 宋会会, 李莱龙, 石栋 2016 发光学报 37 1545]
[16] Yang B, Liu X X, Li H 2015 Acta Phys. Sin. 64 038807 (in Chinese) [杨彪, 刘向鑫, 李辉 2015 64 038807]
[17] Frunza R, Ricinschi D, Gheorghiu F 2011 J. Alloys Compd. 509 6242
[18] Li F 2015 M. S. Thesis (Harbin: Harbin Institute of Technology) (in Chinese) [李飞 2015 硕士学位论文 (哈尔滨: 哈尔滨工业大学)]
[19] Li J H 2009 M. S. Thesis (Shanxi: North University of China) (in Chinese) [李珺泓 2009 硕士学位论文 (山西: 中北大学)]
[20] Wang C, Zhang J C, Hao Y, Yang Y 2006 Chin. J. Semicond. 27 1436 (in Chinese) [王冲, 张进城, 郝跃, 杨燕 2006 半导体学报 27 1436]
[21] Neamen D H (translated by Zhao Y Q, Yao S Y, Xie X D) 2010 Semiconductor Physics and Devices: Basic Principles (Beijing: Electronics Industry Press) p211, 212 (in Chinese) [尼曼 D H 著 (赵毅强, 姚素英, 解晓东 译) 2010 半导体物理与器件(北京: 电子工业出版社)第211, 212页]
[22] Qiao H, Yuan J, Xu Z Q, Che C Y, Lin S H, Wang Y S, Song J C, Liu Y, Khan Q, Hoh H Y, Pan C X, Li S J, Bao Q L 2015 ACS Nano 9 1886
[23] Liu Y H, Cao W, Li S J, Li Y, Sun S C, Fu K, Chen C Q, Zhang B S 2015 Chin. J. Lumin. 36 1167 (in Chinese) [刘翌寒, 曹伟, 李绍娟, 李洋, 孙世闯, 付凯, 陈长清, 张宝顺 2015 发光学报 36 1167]
[24] Sun Q 2012 M. S. Thesis (Shanghai: East China Normal University) (in Chinese) [孙倩 2012 硕士学位论文 (上海: 华东师范大学)]
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