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The results are reported of the spatially indirect photoluminescence (PL) spectrum measurements performed on undoped ZnSe/BeTe type-Ⅱ quantum wells with special interface structures at low temperatures (5—10 K). The PL spectra have two main peaks that show a weak PL intensity and a low linear polarization degree and that their linear polarizations are contrary to each other, And the PL spectra are strikingly dependent on an applied external electric field perpendicular to the layers. The results show that the special interface structures reduce spatially indirect radiative recombination efficiency and linear polarization degree, and that a weak built-in electric field exists in the heterostructure. With the increase of excitation intensity, the PL peak on high energy side shows a rapid increase. This is explained by the formation of high charge density on both sides of the high energy side interface.
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Keywords:
- Ⅱ quantum wells /
- photoluminescence /
- interface structures
[1] Xing Y H, Han J, Liu J P, Deng J, Niu N H, Shen G D 2007 Acta Phys. Sin. 56 7295 (in Chinese ) [刑艳辉、韩 军、刘建平、邓 军、牛南辉、沈光地 2007 56 7295]
[2] Ji Z W, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 6609 (in Chinese)[冀子武、三野弘文、音贤一、室清文、秋本良一、嶽山正二郎 2008 57 6609]
[3] Waag A, Fisher F, Lugauer H J 1996 J. Appl. Phys. 80 792
[4] Yakovlev D R, Ivchenko E L 2000 Phys. Rev. B 61 2421
[5] Ji Z W, Lu Y, Chen J X, Mino H, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 1214 (in Chinese)[冀子武、鲁 云、陈锦祥、三野弘文、秋本良一、嶽山正二郎 2008 57 1214]
[6] Ji Z W, Mino H, Kojima E, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 3260 (in Chinese )[冀子武、三野弘文、小映二、秋本良一、嶽山正二郎 2008 57 3260]
[7] Maksimov A A, Zaitsev S V, Tartakovskii I I, Kulakovskii V D, Gippius N A, Yakovlev D R, Ossau W, Euscher G, Waag A, Landwehr G 2000 Phys. Status Solidi B 221 523
[8] Zaitsev S V, Maksimov A A, Kulakovskii V D, Tartakovskii I I, Yakovlev D R, Ossau W, Hansen L, Landwehr G, Waag A 2002 J. Appl. Phys. 91 652
[9] Butov L V, Filin A I 1998 Phys. Rev. B 58 1980
[10] Mino H, Fujikawa A, Akimoto R, Takeyama S 2004 Physica E 22 640
[11] Ji Z W, Takeyama S, Mino H, Oto K, Muro K, Akimoto R 2008 Appl. Phys. Lett. 92 093107
[12] Ji Z W, Mino H, Oto K, Akimoto R 2009 Semicond. Sci. Technol. 24 095016
[13] Mino H, Ji Z W, Kano A. Oto K, Muro K, Akimoto R, Takeyama S 2006 J. Phys: Conf. Seri. 51 399
[14] Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[15] Ji Z W, Yamamoto H, Mino H, Akimoto R, Takeyama S 2004 Physica E 22 632
[16] Yakovlev D R, Platonov A V, Ivchenko E L, Kochereshko V P, Sas C, Ossau W, Hansen L, Waag A, Landwehr G, Molenkamp L W 2002 Phys..Rev. Lett. 88 257401
[17] Skolnick M S, Rorison J M, Nash K J, Mowbray D J, Tapster P R, Bass S J, Pitt A D 1987 Phys. Rev. Lett. 58 2130
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[1] Xing Y H, Han J, Liu J P, Deng J, Niu N H, Shen G D 2007 Acta Phys. Sin. 56 7295 (in Chinese ) [刑艳辉、韩 军、刘建平、邓 军、牛南辉、沈光地 2007 56 7295]
[2] Ji Z W, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 6609 (in Chinese)[冀子武、三野弘文、音贤一、室清文、秋本良一、嶽山正二郎 2008 57 6609]
[3] Waag A, Fisher F, Lugauer H J 1996 J. Appl. Phys. 80 792
[4] Yakovlev D R, Ivchenko E L 2000 Phys. Rev. B 61 2421
[5] Ji Z W, Lu Y, Chen J X, Mino H, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 1214 (in Chinese)[冀子武、鲁 云、陈锦祥、三野弘文、秋本良一、嶽山正二郎 2008 57 1214]
[6] Ji Z W, Mino H, Kojima E, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 3260 (in Chinese )[冀子武、三野弘文、小映二、秋本良一、嶽山正二郎 2008 57 3260]
[7] Maksimov A A, Zaitsev S V, Tartakovskii I I, Kulakovskii V D, Gippius N A, Yakovlev D R, Ossau W, Euscher G, Waag A, Landwehr G 2000 Phys. Status Solidi B 221 523
[8] Zaitsev S V, Maksimov A A, Kulakovskii V D, Tartakovskii I I, Yakovlev D R, Ossau W, Hansen L, Landwehr G, Waag A 2002 J. Appl. Phys. 91 652
[9] Butov L V, Filin A I 1998 Phys. Rev. B 58 1980
[10] Mino H, Fujikawa A, Akimoto R, Takeyama S 2004 Physica E 22 640
[11] Ji Z W, Takeyama S, Mino H, Oto K, Muro K, Akimoto R 2008 Appl. Phys. Lett. 92 093107
[12] Ji Z W, Mino H, Oto K, Akimoto R 2009 Semicond. Sci. Technol. 24 095016
[13] Mino H, Ji Z W, Kano A. Oto K, Muro K, Akimoto R, Takeyama S 2006 J. Phys: Conf. Seri. 51 399
[14] Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[15] Ji Z W, Yamamoto H, Mino H, Akimoto R, Takeyama S 2004 Physica E 22 632
[16] Yakovlev D R, Platonov A V, Ivchenko E L, Kochereshko V P, Sas C, Ossau W, Hansen L, Waag A, Landwehr G, Molenkamp L W 2002 Phys..Rev. Lett. 88 257401
[17] Skolnick M S, Rorison J M, Nash K J, Mowbray D J, Tapster P R, Bass S J, Pitt A D 1987 Phys. Rev. Lett. 58 2130
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