水热合成ZnO：Cd纳米棒的微结构及光致发光特性

王长远; 杨晓红; 马勇; 冯媛媛; 熊金龙; 王维

doi:10.7498/aps.63.157701

摘要

采用水热法制备了ZnO和不同掺杂浓度的ZnO：Cd纳米棒，通过SEM，XRD、拉曼光谱等的分析，研究了ZnO和ZnO：Cd的微结构并测试分析了其光致发光特性. 结果表明，ZnO和ZnO：Cd纳米棒呈六角纤锌矿结构，Cd掺杂使得纳米棒体积更小. 由于内部张应力的影响，Cd掺杂使得材料光学带隙减少. 当掺杂浓度为2%时，合成的材料光致发光谱中出现了位于2.67 eV处，由导带底和Zn空位（VZn）缺陷能级跃迁造成的蓝光发射峰，并且Cd的掺入使得位于2.90 eV附近的紫光发射峰强度增强，对于研究ZnO蓝紫发光器件具有重要的意义.

关键词:

Abstract

High-quality ZnO and Cd-doped ZnO nanorods with different Cd-doping concentrations are synthesized by using the hydrothermal method. Microstructures and photoluminescence of the samples are systematically investigated by SEM, X-ray diffraction (XRD), Raman scattering spectrum and photoluminescence (PL) spectrum. Results of XRD analysis indicate that ZnO and ZnO:Cd crystallites exhibit a hexagonal wurtzite structure. SEM shows that the nanorods become smaller due to Cd doping. There is an internal tension which induces the decrease of optical band gap in Cd-doped nanorods. Cd-doping increases the intensity of violet emission peak near 2.90 eV and the blue emission peak located at 2.67 eV appears when the doping concentration is up to 2%. This study can be used for developing blue-violet-emitting devices.

Keywords:

作者及机构信息

1.
重庆师范大学, 光学工程重点实验室, 重庆 400047

基金项目: 庆师范大学博士启动基金（批准号：10XLB001）和国家自然科学基金青年基金（批准号：61106129）资助的课题.

Authors and contacts

1.
The Chongqing City Key Laboratory of Optoelectronic Functional Materials, Optical Engineering Key Lab, Chongqing Normal University, Chongqing 400047, China

Funds: Project supported by the Doctoral Foundation of Chongqing Normal University, China (Grant No. 10XLB001), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106129).

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施引文献

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[3]
[4]
[5]	Gao H X, Hu R, Yang Y T 2012 Chin. Phys. Lett. 29 017305
[6]
[7]	Nie M Zhao Y Zeng YJiang Y J 2013 Acta Phys. Sin. 62 176801 (in Chinese) [聂朦, 赵艳, 曾勇, 蒋毅坚 2013 62 176801]
[8]
[9]	Lv B, Zhou X, Linghu R F, Wang X L, Yang X D 2011 Chin. Phys. B 20 036104
[10]	Yang C, Wang X P, Wang L J, Pang X F, Li S K, Jing L W 2013 Chin. Phys. B 22 088101
[11]
[12]
[13]	Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501
[14]
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[16]
[17]	Zhong J B, Li J Z, He X Y, Zeng J, Lu Y, Hu W, Lin K 2012 Curr. Appl. Phys. 12 998
[18]	Lee W, Shin S, Jung D R, Kim J, Nahm C, Moon T, Park B 2012 Curr. Appl. Phys. 12 628
[19]
[20]
[21]	Li H, Liu E T, Chan F Y F, Lu Z, Chen R 2011 Mater. Lett. 65 3440
[22]	Wang C Z, Chen Z, He Y, Li L Y, Zhang D 2009 Appl. Surf. Sci 255 6881
[23]
[24]	Chen R Q, Zou C W, Bian J M, Sandhu A, Gao W 2011 Nanotech. 22 1057061
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[28]
[29]	Zhang J, Zhao S Q, Zhang K, Zhou J Q, Cai Y F 2012 Nanscale Res. Lett. 7 405
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[45]
[46]	Bai L N, Zheng B J, Lian J S, Jiang Q 2012 Solid. State. Sci. 14 698
[47]
[48]	Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943
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