Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Model of intrinsic carrier concentration of strained Si/(001)Si1-xGexJ. Acta Physica Sinica, 2010, 59(3): 2064-2067. DOI: 10.7498/aps.59.2064
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Citation:
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Model of intrinsic carrier concentration of strained Si/(001)Si1-xGexJ. Acta Physica Sinica, 2010, 59(3): 2064-2067. DOI: 10.7498/aps.59.2064
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Model of intrinsic carrier concentration of strained Si/(001)Si1-xGexJ. Acta Physica Sinica, 2010, 59(3): 2064-2067. DOI: 10.7498/aps.59.2064
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Citation:
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Model of intrinsic carrier concentration of strained Si/(001)Si1-xGexJ. Acta Physica Sinica, 2010, 59(3): 2064-2067. DOI: 10.7498/aps.59.2064
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