| [1] |
Zhai Shi-Ming, Liao Huang-Sheng, Zhou Nai-Gen, Huang Hai-Bin, Zhou Lang. Atomic simulation of SiyHx structure configuration in a-Si:H thin films. Acta Physica Sinica,
2020, 69(7): 076801.
doi: 10.7498/aps.69.20191275
|
| [2] |
Liu Ru-Lin, Fang Liang, Hao Yue, Chi Ya-Qing. Density functional theory calculation of diffusion mechanism of intrinsic defects in rutile TiO2. Acta Physica Sinica,
2018, 67(17): 176101.
doi: 10.7498/aps.67.20180818
|
| [3] |
Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui. Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer. Acta Physica Sinica,
2010, 59(5): 3542-3546.
doi: 10.7498/aps.59.3542
|
| [4] |
Liu Xiao-Dong, Wang Yi-Quan, Xu Xing-Sheng, Cheng Bing-Ying, Zhang Dao-Zhong. Enhancement and suppression of the spontaneous emission of a two-level atom in a photonic crystal with a state-conservative photonic pseudogap. Acta Physica Sinica,
2004, 53(1): 125-131.
doi: 10.7498/aps.53.125
|
| [5] |
Li Wen-Bo, Li Ke-Xuan. Solution of radial equation of Kepler’s problem by pseudo-angular-momentum method and normalization of eigenstate and coherent state. Acta Physica Sinica,
2004, 53(9): 2964-2969.
doi: 10.7498/aps.53.2964
|
| [6] |
HAN DA-XING, WANG WAN-LU, ZHANG ZHI. MECHANISM OF ELECTROLUMINESCENCE FROM a-Si:H AND STUDIES OF DEFECT ENERGY DISTRIBUTION IN INTRINSIC LAYER OF a-Si:H SOLAR CELLS BY ELECTROLUMINESCENCE SPECTRA. Acta Physica Sinica,
1999, 48(8): 1484-1490.
doi: 10.7498/aps.48.1484
|
| [7] |
FU GANG, CHEN ZHI-XIONG, SHI BIN. INTRINSIC DEFECTS IN ZnO VARISTOR CERAMICS. Acta Physica Sinica,
1996, 45(5): 850-853.
doi: 10.7498/aps.45.850
|
| [8] |
CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING. PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica,
1994, 43(11): 1847-1853.
doi: 10.7498/aps.43.1847
|
| [9] |
WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN. ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica,
1991, 40(12): 1973-1979.
doi: 10.7498/aps.40.1973
|
| [10] |
ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA. BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica,
1990, 39(12): 1982-1988.
doi: 10.7498/aps.39.1982
|
| [11] |
. LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica,
1989, 38(8): 1235-1244.
doi: 10.7498/aps.38.1235
|
| [12] |
DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING. A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica,
1989, 38(5): 829-833.
doi: 10.7498/aps.38.829
|
| [13] |
CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI. ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica,
1988, 37(3): 481-484.
doi: 10.7498/aps.37.481
|
| [14] |
WANG SHU-LIN, CHENG RU-GUANG. DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1988, 37(7): 1119-1123.
doi: 10.7498/aps.37.1119
|
| [15] |
WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE. THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica,
1988, 37(8): 1291-1297.
doi: 10.7498/aps.37.1291
|
| [16] |
WANG WAN-LU, LIAO KE-JUN. STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica,
1987, 36(12): 1529-1537.
doi: 10.7498/aps.36.1529
|
| [17] |
CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG. STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica,
1987, 36(4): 524-528.
doi: 10.7498/aps.36.524
|
| [18] |
SU ZI-MIN, PENG SHAO-QI. DETERMINATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY THE METHOD OF INTERNAL PHOTOEMISSION TRANSIENT CURRENT TEMPERATURE SPECTROSCOPY. Acta Physica Sinica,
1986, 35(6): 731-740.
doi: 10.7498/aps.35.731
|
| [19] |
WU DAO-HUAI, YE JIAN-MING, PAN HUI-YING, CHENG RU-GUANG. PHOTO-INDUCED DEGRADATION OF UNDOPED AMORPHOUS SILICON HYDRIDE PREPARED BY D. C. GLOW-DISCHARGE DEPOSITION TECHNIQUE. Acta Physica Sinica,
1985, 34(2): 253-258.
doi: 10.7498/aps.34.253
|
| [20] |
HE YU-LIANG, YAN YONG-HONG. THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica,
1984, 33(10): 1472-1474.
doi: 10.7498/aps.33.1472
|
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