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Stability and dynamic behavior of negative differential conductivity in thyristors are studied in this paper, which aims to clarify the mechanism of chaotic phenomena in the thyristor. Firstly, a spatio-temporal model of the thyristor is established, and the boundary condition of the system is obtained based on the linear stability analysis. The results show that the instability of thyristor is not only determined by the characteristics of negative differential conductivity, but also depends on the external conditions. Computer simulation is made to verify the proposed view for different external control parameters. The theoretical results are also confirmed by experimental measurements. So, the mechanism of chaotic phenomena in thyristor is clearly explained.
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Keywords:
- thyristor /
- spatio-temporal chaos /
- negative differential conduction /
- current filamentation
[1] ［1］Aoki K, Yamamoto K 1989 Appl. Phys. 48 111
[2] ［2］Deane J H, Hamill D C 1990 IEEE Trans. Power Electron. 5 260
[3] ［3］Lisik Z, Turowski 1991 IEEE Circ. Dev. Syst. 138 575
[4] ［4］Li G H, Zhou S P, Xu D M 2002 Acta Phys. Sin. 51 736（in Chinese）［李国辉、周世平、徐得名 2002 51 736］
[5] ［5］Yao F, Xue C L 2007 Acta Phys. Sin. 56 6654 （in Chinese） ［姚飞、薛春来 2007 56 6654］
[6] ［6］Song J J, Zhang H M 2008 Acta Phys. Sin. 57 5918（in Chinese）［宋建军、张鹤鸣 2008 57 5918］
[7] ［7］Neamen D A 2003 Semiconductor Physics and Devices（New York: McGraw-Hill） p240
[8] ［8］Luo X S, Chen G R 2003 Acta Phys. Sin. 52 12 （in Chinese）［罗晓曙、陈关荣 2003 52 12］
[9] ［9］Zhou Y L, Luo X S 2003 Acta Phys. Sin. 52 2978 （in Chinese）2［邹艳丽、罗晓曙 2003 52 2978］
[10] ］Li M, Ma X K, Dai D, Zhang H 2005 Acta Phys. Sin. 54 1084（in Chinese）［李明、马西魁、戴栋、张浩 2005 54 1084］
[11] ］Yang R, Zhang B 2007 Acta Phys. Sin. 56 3789（in Chinese）［杨汝、张波 2007 56 3789］
[12] ］Wang X M, Zhang B, Qiu D Y 2008 Acta Phys. Sin. 57 2728（in Chinese）［王学梅、张波、丘东元 2008 57 2728］
[13] ］Gorbatyuk A V, Rodin P B 1992 Solid State Electron. 35 1359
[14] ］Benda V 2003 Power Semiconductor Devices: Theory and Applications （England: John Wiley） p56
[15] ］Wacker A, Schll E 1994 Semicond. Sci. Technol. 9 592
[16] ］Just W, Popovich S, Amann A, Baba N, Schll E 2003 Phys. Rev. E 67 026222
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[1] ［1］Aoki K, Yamamoto K 1989 Appl. Phys. 48 111
[2] ［2］Deane J H, Hamill D C 1990 IEEE Trans. Power Electron. 5 260
[3] ［3］Lisik Z, Turowski 1991 IEEE Circ. Dev. Syst. 138 575
[4] ［4］Li G H, Zhou S P, Xu D M 2002 Acta Phys. Sin. 51 736（in Chinese）［李国辉、周世平、徐得名 2002 51 736］
[5] ［5］Yao F, Xue C L 2007 Acta Phys. Sin. 56 6654 （in Chinese） ［姚飞、薛春来 2007 56 6654］
[6] ［6］Song J J, Zhang H M 2008 Acta Phys. Sin. 57 5918（in Chinese）［宋建军、张鹤鸣 2008 57 5918］
[7] ［7］Neamen D A 2003 Semiconductor Physics and Devices（New York: McGraw-Hill） p240
[8] ［8］Luo X S, Chen G R 2003 Acta Phys. Sin. 52 12 （in Chinese）［罗晓曙、陈关荣 2003 52 12］
[9] ［9］Zhou Y L, Luo X S 2003 Acta Phys. Sin. 52 2978 （in Chinese）2［邹艳丽、罗晓曙 2003 52 2978］
[10] ］Li M, Ma X K, Dai D, Zhang H 2005 Acta Phys. Sin. 54 1084（in Chinese）［李明、马西魁、戴栋、张浩 2005 54 1084］
[11] ］Yang R, Zhang B 2007 Acta Phys. Sin. 56 3789（in Chinese）［杨汝、张波 2007 56 3789］
[12] ］Wang X M, Zhang B, Qiu D Y 2008 Acta Phys. Sin. 57 2728（in Chinese）［王学梅、张波、丘东元 2008 57 2728］
[13] ］Gorbatyuk A V, Rodin P B 1992 Solid State Electron. 35 1359
[14] ］Benda V 2003 Power Semiconductor Devices: Theory and Applications （England: John Wiley） p56
[15] ］Wacker A, Schll E 1994 Semicond. Sci. Technol. 9 592
[16] ］Just W, Popovich S, Amann A, Baba N, Schll E 2003 Phys. Rev. E 67 026222
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